PC357N4J000F

PC357NJ0000F Series PC357NJ0000F Series Mini-flat Package, General Purpose Photocoupler ■ Description ■ Agency approvals/Compliance PC357NJ0000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V and CTR is 50% to 600% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC357) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Hybrid substrates that require high density mounting 2. Programmable controllers ■ Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 80V) 4. Current transfer ratio (CTR) : MIN. 50% at IF=5mA, VCE=5V 5. Several CTR ranks available 6. High isolation voltage between input and output (Viso(rms) : 3.75kV) 7. RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00102FEN Date Jun. 30. 2005 © SHARP Corporation PC357NJ0000F Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) 3.6±0.3 2.54±0.25 4 3 Date code Anode mark 357 4.4±0.2 SHARP mark "S" Rank mark Factory identification mark 1 2 ±0.1 0.4 5.3±0.3 Epoxy resin 0.1±0.1 2.6±0.2 0.2±0.05 45˚ 0.5+0.4 −0.2 6˚ 7.0+0.2 −0.7 Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A00102FEN 2 PC357NJ0000F Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production Rank mark Refer to the Model Line-up table Sheet No.: D2-A00102FEN 3 PC357NJ0000F Series ■ Absolute Maximum Ratings Output Input Parameter Symbol IF Forward current *1 Peak forward current IFM Reverse voltage VR P Power dissipation Collector-emitter voltage VCEO Emitter-collector voltage VECO Collector current IC Collector power dissipation PC Total power dissipation Ptot Topr Operating temperature Storage temperature Tstg *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 80 6 50 150 170 −30 to +100 −40 to +125 3.75 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Symbol Parameter VF Forward voltage Reverse current IR Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 80 6 2.5 − 5×1010 − − − TYP. 1.2 − 30 − − − 5 0.1 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 30 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A00102FEN 4 PC357NJ0000F Series ■ Model Line-up Taping IC [mA] Rank mark (IF=5mA, VCE=5V, Ta=25˚C) 750pcs/reel 3 000pcs/reel PC357NJ0000F PC357NTJ000F with or without 2.5 to 30.0 A PC357N1J000F PC357N1TJ00F 4.0 to 8.0 B PC357N2J000F PC357N2TJ00F 6.5 to 13.0 C PC357N3J000F PC357N3TJ00F 10.0 to 20.0 D PC357N4J000F PC357N4TJ00F 15.0 to 30.0 Model No. A or B PC357N5J000F PC357N5TJ00F 4.0 to 13.0 B or C PC357N6J000F PC357N6TJ00F 6.5 to 20.0 C or D PC357N7J000F PC357N7TJ00F 10.0 to 30.0 A, B or C PC357N8J000F PC357N8TJ00F 4.0 to 20.0 B, C or D PC357N9J000F PC357N9TJ00F 6.5 to 30.0 PC357N0J000F PC357N0TJ00F A, B, C or D 4.0 to 30.0 Package Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A00102FEN 5 PC357NJ0000F Series Fig.2 Diode Power Dissipation vs. Ambient Temperature 70 120 60 100 Diode power dissipation P (mW) Forward current IF (mA) Fig.1 Forward Current vs. Ambient Temperature 50 40 30 20 10 0 −30 0 25 50 75 100 Ambient temperature Ta(˚C) 70 60 40 20 0 −30 125 Fig.3 Collector Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) 150 100 50 0 25 50 75 100 Ambient temperature Ta (˚C) 250 200 170 150 100 50 0 −30 125 0 25 50 Ambient temperature Ta (˚C) 10 000 Ta=75˚C Pulse width≤100µs Ta=25˚C Forward current IF (mA) 50˚C 1 000 100 10− 3 10− 2 Duty ratio 10− 1 100 Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio 10 100 300 0 −30 Peak forward current IFM (mA) 0 50 55 Ambient temperature Ta (˚C) Fig.4 Total Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) 80 100 −25˚C 10 1 1 25˚C 0˚C 0 0.5 1 1.5 2 2.5 Forward voltage VF (V) 3 3.5 Sheet No.: D2-A00102FEN 6 PC357NJ0000F Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 50 500 Ta=25˚C 40 300 200 1 10 Forward current IF (mA) 5mA 2 0 4 6 8 10 0.16 IF=5mA VCE=5V 50 80 60 40 0 20 Ambient temperature Ta (˚C) IF=20mA IC=1mA 0.14 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio(%) 20 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.12 0.1 0.08 0.06 0.04 0.02 0 −30 100 Fig.11 Collector Dark Current vs. Ambient Temperature 0 20 80 60 40 Ambient temperature Ta (˚C) 100 Fig.12 Response Time vs. Load Resistance 10−5 VCE=50V 10−6 100 VCE=2V IC=2mA Ta=25˚C tr 10 −7 Response time (µs) Collector dark current ICEO (A) mA Collector-emitter voltage VCE (V) 100 0 −30 PC(MAX.) 10 0 100 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 150 30 10 100 0 0.1 IF=30mA 20 mA 400 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C 10−8 10−9 tf 10 td 1 ts 10−10 10−11 −30 0 20 40 60 80 Ambient temperature Ta (˚C) 0.1 0.01 100 0.1 1 10 Load resistance RL (kΩ) Sheet No.: D2-A00102FEN 7 PC357NJ0000F Series Fig.13 Test Circuit for Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current 8 VCC Ta=25˚C Input RD RL Collector-emitter saturation voltage VCE (sat) (V) Input Output Output 10% 90% VCE td ts tr tf Please refer to the conditions in Fig.12 7 6 IC=0.5mA 1mA 3mA 5mA 7mA 5 4 3 2 1 0 0 3 12 6 9 Forward current IF (mA) 15 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00102FEN 8 PC357NJ0000F Series ■ Design Considerations ● Design guide While operating at IF