PC357NJ0000F Series
PC357NJ0000F
Series
Mini-flat Package,
General Purpose Photocoupler
■ Description
■ Agency approvals/Compliance
PC357NJ0000F Series contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4-pin Mini-flat package.
Input-output isolation voltage(rms) is 3.75kV.
Collector-emitter voltage is 80V and CTR is 50% to
600% at input current of 5mA.
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No. PC357)
2. Package resin : UL flammability grade (94V-0)
■ Applications
1. Hybrid substrates that require high density mounting
2. Programmable controllers
■ Features
1. 4-pin Mini-flat package
2. Double transfer mold package (Ideal for Flow
Soldering)
3. High collector-emitter voltage (VCEO : 80V)
4. Current transfer ratio (CTR) : MIN. 50% at IF=5mA,
VCE=5V
5. Several CTR ranks available
6. High isolation voltage between input and output
(Viso(rms) : 3.75kV)
7. RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A00102FEN
Date Jun. 30. 2005
© SHARP Corporation
PC357NJ0000F Series
■ Internal Connection Diagram
1
1
4
2
3
2
3
4
Anode
Cathode
Emitter
Collector
■ Outline Dimensions
(Unit : mm)
3.6±0.3
2.54±0.25
4
3
Date code
Anode mark
357
4.4±0.2
SHARP mark
"S"
Rank mark
Factory identification mark
1
2
±0.1
0.4
5.3±0.3
Epoxy resin
0.1±0.1
2.6±0.2
0.2±0.05
45˚
0.5+0.4
−0.2
6˚
7.0+0.2
−0.7
Product mass : approx. 0.1g
Plating material : SnCu (Cu : TYP. 2%)
Sheet No.: D2-A00102FEN
2
PC357NJ0000F Series
Date code (2 digit)
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
··
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
Mark
P
R
S
T
U
V
W
X
A
B
C
··
·
repeats in a 20 year cycle
Factory identification mark
Factory identification Mark
Country of origin
no mark
Japan
Indonesia
China
* This factory marking is for identification purpose only.
Please contact the local SHARP sales representative to see
the actual status of the production
Rank mark
Refer to the Model Line-up table
Sheet No.: D2-A00102FEN
3
PC357NJ0000F Series
■ Absolute Maximum Ratings
Output
Input
Parameter
Symbol
IF
Forward current
*1
Peak forward current
IFM
Reverse voltage
VR
P
Power dissipation
Collector-emitter voltage VCEO
Emitter-collector voltage VECO
Collector current
IC
Collector power dissipation
PC
Total power dissipation
Ptot
Topr
Operating temperature
Storage temperature
Tstg
*2
Isolation voltage
Viso (rms)
*3
Soldering temperature
Tsol
Rating
50
1
6
70
80
6
50
150
170
−30 to +100
−40 to +125
3.75
260
(Ta=25˚C)
Unit
mA
A
V
mW
V
V
mA
mW
mW
˚C
˚C
kV
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Symbol
Parameter
VF
Forward voltage
Reverse current
IR
Terminal capacitance
Ct
Collector dark current
ICEO
Collector-emitter breakdown voltage BVCEO
Emitter-collector breakdown voltage BVECO
Collector current
IC
Collector-emitter saturation voltage VCE (sat)
Isolation resistance
RISO
Floating capacitance
Cf
Rise time
tr
Response time
Fall time
tf
Conditions
IF=20mA
VR=4V
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IF=5mA, VCE=5V
IF=20mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=2mA, RL=100Ω
MIN.
−
−
−
−
80
6
2.5
−
5×1010
−
−
−
TYP.
1.2
−
30
−
−
−
5
0.1
1×1011
0.6
4
3
MAX.
1.4
10
250
100
−
−
30
0.2
−
1.0
18
18
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
Sheet No.: D2-A00102FEN
4
PC357NJ0000F Series
■ Model Line-up
Taping
IC [mA]
Rank mark
(IF=5mA, VCE=5V, Ta=25˚C)
750pcs/reel
3 000pcs/reel
PC357NJ0000F PC357NTJ000F with or without
2.5 to 30.0
A
PC357N1J000F PC357N1TJ00F
4.0 to 8.0
B
PC357N2J000F PC357N2TJ00F
6.5 to 13.0
C
PC357N3J000F PC357N3TJ00F
10.0 to 20.0
D
PC357N4J000F PC357N4TJ00F
15.0 to 30.0
Model No.
A or B
PC357N5J000F PC357N5TJ00F
4.0 to 13.0
B or C
PC357N6J000F PC357N6TJ00F
6.5 to 20.0
C or D
PC357N7J000F PC357N7TJ00F
10.0 to 30.0
A, B or C
PC357N8J000F PC357N8TJ00F
4.0 to 20.0
B, C or D
PC357N9J000F PC357N9TJ00F
6.5 to 30.0
PC357N0J000F PC357N0TJ00F A, B, C or D
4.0 to 30.0
Package
Please contact a local SHARP sales representative to inquire about production status.
Sheet No.: D2-A00102FEN
5
PC357NJ0000F Series
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
70
120
60
100
Diode power dissipation P (mW)
Forward current IF (mA)
Fig.1 Forward Current vs. Ambient
Temperature
50
40
30
20
10
0
−30
0
25
50
75
100
Ambient temperature Ta(˚C)
70
60
40
20
0
−30
125
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
Total power dissipation Ptot (mW)
150
100
50
0
25
50
75
100
Ambient temperature Ta (˚C)
250
200
170
150
100
50
0
−30
125
0
25
50
Ambient temperature Ta (˚C)
10 000
Ta=75˚C
Pulse width≤100µs
Ta=25˚C
Forward current IF (mA)
50˚C
1 000
100
10− 3
10− 2
Duty ratio
10− 1
100
Fig.6 Forward Current vs. Forward Voltage
Fig.5 Peak Forward Current vs. Duty Ratio
10
100
300
0
−30
Peak forward current IFM (mA)
0
50 55
Ambient temperature Ta (˚C)
Fig.4 Total Power Dissipation vs. Ambient
Temperature
200
Collector power dissipation PC (mW)
80
100
−25˚C
10
1
1
25˚C
0˚C
0
0.5
1
1.5
2
2.5
Forward voltage VF (V)
3
3.5
Sheet No.: D2-A00102FEN
6
PC357NJ0000F Series
Fig.7 Current Transfer Ratio vs. Forward
Current
Fig.8 Collector Current vs. Collector-emitter
Voltage
50
500
Ta=25˚C
40
300
200
1
10
Forward current IF (mA)
5mA
2
0
4
6
8
10
0.16
IF=5mA
VCE=5V
50
80
60
40
0
20
Ambient temperature Ta (˚C)
IF=20mA
IC=1mA
0.14
Collector-emitter saturation voltage
VCE (sat) (V)
Relative current transfer ratio(%)
20
Fig.10 Collector - emitter Saturation Voltage
vs. Ambient Temperature
0.12
0.1
0.08
0.06
0.04
0.02
0
−30
100
Fig.11 Collector Dark Current vs. Ambient
Temperature
0
20
80
60
40
Ambient temperature Ta (˚C)
100
Fig.12 Response Time vs. Load Resistance
10−5
VCE=50V
10−6
100
VCE=2V
IC=2mA
Ta=25˚C
tr
10
−7
Response time (µs)
Collector dark current ICEO (A)
mA
Collector-emitter voltage VCE (V)
100
0
−30
PC(MAX.)
10
0
100
Fig.9 Relative Current Transfer Ratio vs.
Ambient Temperature
150
30
10
100
0
0.1
IF=30mA
20
mA
400
Collector current IC (mA)
Current transfer ratio CTR (%)
VCE=5V
Ta=25˚C
10−8
10−9
tf
10
td
1
ts
10−10
10−11
−30
0
20
40
60
80
Ambient temperature Ta (˚C)
0.1
0.01
100
0.1
1
10
Load resistance RL (kΩ)
Sheet No.: D2-A00102FEN
7
PC357NJ0000F Series
Fig.13 Test Circuit for Response Time
Fig.14 Collector-emitter Saturation Voltage
vs. Forward Current
8
VCC
Ta=25˚C
Input
RD
RL
Collector-emitter saturation voltage
VCE (sat) (V)
Input
Output Output
10%
90%
VCE
td
ts
tr
tf
Please refer to the conditions in Fig.12
7
6
IC=0.5mA
1mA
3mA
5mA
7mA
5
4
3
2
1
0
0
3
12
6
9
Forward current IF (mA)
15
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A00102FEN
8
PC357NJ0000F Series
■ Design Considerations
● Design guide
While operating at IF
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