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PC3H510NIP

PC3H510NIP

  • 厂商:

    SHARP(夏普)

  • 封装:

    4-SOIC(0.173",4.40mm)

  • 描述:

    OPTOISO 2.5KV DARLNG 4-MINI-FLAT

  • 数据手册
  • 价格&库存
PC3H510NIP 数据手册
PC3H510NIP Mini-flat Half Pitch Package, Darlington Phototransistor Output, Low Input Current Photocoupler PC3H510NIP ∗ 4-channel package type is also available. (model No. PC3Q510NIP) ■ Description ■ Agency approvals/Compliance PC3H510NIP contains a IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat, Half pitch type. Input-output isolation voltage(rms) is 2.5kV. CTR is MIN. 600% at input current of 0.5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3H51) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers 2. Facsimiles 3. Telephones ■ Features 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input current type (IF=0.5mA) 4. Darlington phototransistor output (CTR : MIN. 600% at IF=0.5mA, VCE=2V) 5. Isolation voltage between input and output (Viso(rms) : 2.5kV) Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02301EN Date Sep. 30. 2003 © SHARP Corporation PC3H510NIP ■ Internal Connection Diagram 4 1 1 2 3 2 3 ■ Outline Dimensions (Unit : mm) Date code 1 4 H51 2 3 4.4±0.2 0.4±0.1 1.27±0.25 2.6±0.3 SHARP mark "S" Anode mark 4 Anode Cathode Emitter Collector 5.3±0.3 Epoxy resin 7.0+0.2 −0.7 0.5+0.4 −0.2 0.1±0.1 2.0±0.2 0.2±0.05 (1.7) *( ) : Reference Dimensions Product mass : approx. 0.05g Sheet No.: D2-A02301EN 2 PC3H510NIP Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Sheet No.: D2-A02301EN 3 PC3H510NIP ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 10 200 6 15 35 6 80 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA mA V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Conditions IF=5mA VR=4V V=0, f=1kHz VCE=10V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=2V IF=1mA, IC=2mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=10mA, RL=100Ω MIN. − − − − 35 6 3 − 5×1010 − − − TYP. 1.2 − 30 − − − 14 − 1×1011 0.6 60 53 MAX. 1.4 10 250 1000 − − 60 1.0 − 1.0 300 250 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A02301EN 4 PC3H510NIP Fig.2 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) Forward current I F (mA) Fig.1 Forward Current vs. Ambient Temperature 10 5 0 −30 0 25 50 75 100 15 10 5 0 −30 125 0 200 150 100 50 0 25 50 75 50 75 100 125 Fig.4 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.3 Collector Power Dissipation vs. Ambient Temperature 0 −30 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio 100 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 2 000 500 200 100 50 Ta=100˚C 10 Ta=75˚C 25˚C 0˚C 50˚C −25˚C 1 20 10 −3 5 10 2 −2 5 10 2 5 10 −1 0.1 2 5 1 0 Duty ratio 0.5 1.0 1.5 2.0 Forward voltage VF (V) Sheet No.: D2-A02301EN 5 PC3H510NIP Fig.8 Collector Current vs. Forward Current Fig.7 Current Transfer Ratio vs. Forward Current 4 000 3 500 3 000 Collector current IC (mA) Current transfer ratio CTR (%) 100 VCE=2V Ta=25˚C 2 500 2 000 1 500 VCE=2V Ta=25˚C 10 1 1 000 500 0 0.1 1 0.1 0.1 10 1 Forward current IF (mA) Forward current IF (mA) Fig.9 Collector Current vs. Collector-emitter Voltage Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 120 140 Pc(MAX) Relative current transfer ratio (%) Collector current IC (mA) Ta=25˚C IF=7.0mA 100 IF=5.0mA 80 IF=3.0mA IF=2.0mA 60 40 IF=1.0mA IF=0.7mA 20 120 IF=0.5mA VCE=2V 100 80 60 40 20 IF=0.5mA 0 0 1 2 3 4 0 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 5 Collector-emitter voltage VCE (V) Ambient temperature Ta (˚C) Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature 1.2 Fig.12 Collector Dark Current vs. Ambient Temperature 10−4 IF=1mA IC=2mA VCE=10V 10−5 1 Collector dark current ICEO (A) Collector-emitter saturation voltage VCE (sat) (V) 10 0.8 0.6 0.4 0.2 10−6 10−7 10−8 10−9 10−10 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A02301EN 6 PC3H510NIP Fig.13 Response Time vs. Load Resistance 1 000 Fig.14 Test Circuit for Response Time VCC VCE=2V IC=10mA Ta=25˚C Input Input Response time (µs) tr 100 RD RL Output Output 10% tf 90% ts td ts tr td tf 10 Please refer to the conditions in Fig.13 1 0.01 0.1 1 Load resistance RL (kΩ) 10 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02301EN 7 PC3H510NIP ■ Design Considerations ● Design guide While operating at IF
PC3H510NIP 价格&库存

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