PC713V0YSZX

PC713VxNSZX Series PC713VxNSZX Series DIP 6 pin Includes Base Terminal Connection Photocoupler ■ Description ■ Agency approvals/Compliance PC713VxNSZX Series contains an IRED optically coupled to a phototransistor. It is packaged in a 6 pin DIP, available in SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. Collector-emitter voltage is 80V(*) and CTR is 50% to 600% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC713V) 2. Approved by TÜV (VDE0884) (as an option) file No. R-9151576 (as model No. PC713V) 3. Package resin : UL flammability grade (94V-0) ■ Applications 1. Home appliances 2. Programmable controllers 3. Personal computer peripherals ■ Features 1. 6 pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. With base terminal 4. High collector-emitter voltage (VCEO:80V(*)) 5. High isolation voltage between input and output (Viso(rms) : 5.0kV) (*) Up to Date code "P7" (July 2002) VCEO : 35V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A04301EN Date Nov. 28. 2003 © SHARP Corporation PC713VxNSZX Series ■ Internal Connection Diagram 1 1 6 2 5 2 3 4 3 5 4 6 Anode Cathode NC Emitter Collector Base ■ Outline Dimensions (Unit : mm) 1. Through-Hole [ex. PC713VxNSZX] 2. Through-Hole (VDE0884 option) [ex. PC713VxYSZX] 1.2±0.3 1.2±0.3 ±0.2 ±0.2 0.6 4 PC713V Anode mark 1 6 Anode mark 4 1 7.12 Date code 3 7.62±0.3 Rank mark 2.9±0.5 0.5TYP. 3.5±0.5 2.9±0.5 2 7.12±0.3 7.62±0.3 Rank mark VDE0884 Identification mark 4 PC713V Date code 2 3 ±0.5 5 0.5TYP. 5 3.5±0.5 6 6.5±0.5 SHARP mark "S" SHARP mark "S" 6.5±0.5 0.6 Epoxy resin θ : 0 to 13˚ 3. SMT Gullwing Lead-Form [ex. PC713VxNIPX] 1.2±0.3 0.6±0.2 4 6 6.5±0.5 PC713V SHARP mark "S" 5 PC713V Anode mark 4 Date code Anode mark 1 2 3 Rank mark 7.12±0.5 0.26±0.1 1.0+0.4 −0 Epoxy resin Rank mark 7.12±0.5 7.62±0.3 3.5±0.5 2.54±0.25 Date code 3 7.62±0.3 3.5±0.5 2 0.35±0.25 1 VDE0884 Identification mark 4 2.54±0.25 1.0+0.4 −0 10.0+0 −0.5 0.35±0.25 5 θ θ : 0 to 13˚ 0.26±0.1 6 SHARP mark "S" θ 4. SMT Gullwing Lead-Form (VDE0884 option) [ex. PC713VxYIPX] 1.2±0.3 0.6±0.2 0.5±0.1 2.54±0.25 θ 3.25±0.5 θ 6.5±0.5 0.5±0.1 2.54±0.25 3.25±0.5 Epoxy resin 1.0+0.4 −0 Epoxy resin 1.0+0.4 −0 10.0+0 −0.5 Product mass : approx. 0.36g Sheet No.: D2-A04301EN 2 PC713VxNSZX Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Rank mark Refer to the Model Line-up Sheet No.: D2-A04301EN 3 PC713VxNSZX Series ■ Absolute Maximum Ratings Output Input Parameter Symbol IF Forward current *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 *4 80 6 *4 80 6 50 150 170 −25 to +100 −40 to +125 5 260 (Ta=25˚C) Unit mA A V mW V V V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1minute, f=60Hz *3 For 10s *4 Up to Date code "P7" (July 2002) VCEO : 35V, VCBO : 35V. ■ Electro-optical Characteristics Input Output Transfer characteristics Symbol Parameter VF Forward voltage Peak forward voltage VFM Reverse current IR Terminal capacitance Ct ICEO Collector dark current Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector-base breakdown voltage BVCBO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance fC Cut-off frequency tr Rise time Response time Fall time tf Conditions IF=20mA IFM=0.5A VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IC=0.1mA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω −3dB VCE=2V, IC=2mA, RL=100Ω MIN. − − − − − *5 80 6 *5 80 2.5 − 5×1010 − − − − TYP. 1.2 − − 30 − − − − − 0.1 1×1011 0.6 80 4 3 MAX. 1.4 3.0 10 250 100 − − − 30 0.2 − 1.0 − 18 18 (Ta=25˚C) Unit V V µA pF nA V V V mA V Ω pF kHz µs µs *5 Up to Date code "P7" (July 2002) BVCEO≥35V and BVCBO≥35V. Sheet No.: D2-A04301EN 4 PC713VxNSZX Series ■ Model Line-up Lead Form Through-Hole Package −−−−−− PC713V0NSZX PC713V1NSZX PC713V2NSZX Model No. PC713V3NSZX PC713V5NSZX PC713V6NSZX PC713V8NSZX VDE0884 Sleeve 50pcs / sleeve Approved −−−−−− PC713V0YSZX PC713V0NIZX PC713V1YSZX PC713V1NIZX PC713V2YSZX PC713V2NIZX PC713V3YSZX PC713V3NIZX PC713V5YSZX PC713V5NIZX PC713V6YSZX PC713V6NIZX PC713V8YSZX PC713V8NIZX SMT Gullwing Approved PC713V0YIZX PC713V1YIZX PC713V2YIZX PC713V3YIZX PC713V5YIZX PC713V6YIZX PC713V8YIZX Taping Rank mark 1 000pcs / reel −−−−−− Approved PC713V0NIPX PC713V0YIPX with or with out A PC713V1NIPX PC713V1YIPX B PC713V2NIPX PC713V2YIPX C PC713V3NIPX PC713V3YIPX A or B PC713V5NIPX PC713V5YIPX B or C PC713V6NIPX PC713V6YIPX PC713V8NIPX PC713V8YIPX A, B or C IC [mA] (IF=5mA, VCE=5V, Ta=25˚C) 2.5 to 30.0 4.0 to 8.0 6.5 to 13.0 10.0 to 20.0 4.0 to 13.0 6.5 to 20.0 4.0 to 20.0 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A04301EN 5 PC713VxNSZX Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 60 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 -25 0 25 50 75 100 80 70 60 40 20 0 −25 125 0 Ambient temperature Ta (˚C) Fig.4 Total Power Dissipation vs. Ambient Temperature Fig.3 Collector Power Dissipation vs. Ambient Temperature 200 250 Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 25 55 75 100 Ambient temperature Ta (˚C) 150 100 50 0 −25 0 25 50 75 100 200 170 150 100 50 0 −25 125 0 Ambient temperature Ta (˚C) Fig.5 Peak Forward Current vs. Duty Ratio 25 50 75 100 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage 10 Ta=75˚C 50˚C Forward current IF (mA) Peak forward current IFM (A) Pulse width≤100µs Ta=25˚C 1 0.1 25˚C 0˚C 100 −25˚C 10 1 0.01 10−3 10−2 10−1 1 0 Duty ratio 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF (V) Sheet No.: D2-A04301EN 6 PC713VxNSZX Series Fig.8 Collector Current vs. Collectoremitter Voltage Fig.7 Current Transfer Ratio vs. Forward Current 30 200 25 160 Collector current IC (mA) Current transfer ratio CTR (%) 180 140 120 RBE=∞ 100 80 500kΩ 100kΩ 60 RBE=∞ Ta=25˚C IF=30mA VCE=5V Ta=25˚C 40 PC (MAX.) 20mA 20 15 10mA 10 5mA 5 20 0 0 0 10 1 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter saturation voltage VCE(sat) (V) Relative current transfer ratio (%) IF=5mA VCE=5V RBE=∞ 100 50 25 50 75 100 6 7 8 9 IF=20mA IC=1mA 0.12 RBE=∞ 0.10 0.08 0.06 0.04 0.02 −25 0 20 40 60 80 100 Fig.12 Collector-base Dark Current vs. Ambient Temperature 10−5 10−8 VCE=50V RBE=∞ VCB=50V RBE=∞ Collector dark current ICBO (A) Collector dark current ICEO (A) 5 Ambient temperature Ta(˚C) Fig.11 Collector Dark Current vs. Ambient Temperature 10−7 10−8 10−9 10−10 10−11 −25 4 0.14 Ambient temperature Ta (˚C) 10−6 3 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 150 0 2 Collector-emitter voltage VCE (V) Forward current IF (mA) 0 −25 1 10−9 10−10 10−11 0 25 50 75 100 0 Ambient temperature Ta (˚C) 25 50 75 100 125 Ambient temperature Ta (˚C) Sheet No.: D2-A04301EN 7 PC713VxNSZX Series Fig.13 Response Time vs. Load Resistance VCE=2V IC=2mA RBE=∞ Ta=25˚C 100 Response time (µs) Fig.14 Test Circuit for Response Time Input VCC Output Input tr RD tf 10 RL 10% Output VCE 90% td ts tr tf td ts 1 Please refer to the conditions in Fig.13 0.1 0.1 1 10 Load resistance RL (kΩ) Fig.16 Test Circuit for Frequency Response Fig.15 Frequency Response 0 Voltage gain Av (dB) VCC VCE=5V IC=2mA RBE=∞ Ta=25˚C RL=10kΩ −10 1kΩ RD RL Output VCE 100Ω Please refer to the conditions in Fig.15 −20 1 10 100 Frequency f (kHz) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A04301EN 8 PC713VxNSZX Series ■ Design Considerations ● Design guide While operating at IF