PC715V0YSZX

PC715V0NSZX Series PC715V0NSZX Series DIP 6 pin Darlington Phototransistor Output Photocoupler ■ Description ■ Agency approvals/Compliance PC715V0NSZX Series contains an IRED optically coupled to a phototransistor. It is packaged in a 6 pin DIP. Input-output isolation voltage(rms) is 5.0kV. CTR is MIN. 600% at input current of 1mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC715V) 2. Approved by TÜV (VDE0884) (as an option) file No. R-9151576 (as model No. PC715V) 3. Package resin : UL flammability grade (94V-0) ■ Features ■ Applications 1. 6 pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. Darlington phototransistor output (CTR : MIN. 600% at IF=1mA, VCE=2V) 4. High isolation voltage between input and output (Viso(rms) : 5.0kV) 1. Home appliances 2. Programmable controllers 3. Personal computer peripherals Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A04401EN Date Nov. 28. 2003 © SHARP Corporation PC715V0NSZX Series ■ Internal Connection Diagram 1 1 6 2 5 2 3 4 3 4 5 6 Anode Cathode NC Emitter Collector NC ■ Outline Dimensions (Unit : mm) 1. Through-Hole [ex. PC715V0NSZX] 2. Through-Hole (VDE0884 option) [ex. PC715V0YSZX] 1.2±0.3 1.2±0.3 0.6±0.2 PC715V Anode mark 1 2 SHARP mark "S" 4 3 6 5 PC715V Anode mark Date code 4 1 ±0.5 2 3 ±0.3 Date code 7.12 2.9±0.5 0.5TYP. 7.62±0.3 3.5±0.5 2.9±0.5 7.12 VDE0884 Identification mark 4 7.62±0.3 0.5TYP. 5 3.5±0.5 6 6.5±0.5 SHARP mark "S" 6.5±0.5 0.6±0.2 Epoxy resin 0.5±0.1 θ 2.54±0.25 θ θ : 0 to 13˚ 0.5±0.1 3.25±0.5 2.54±0.25 3.25±0.5 Epoxy resin θ θ θ : 0 to 13˚ Product mass : approx. 0.36g Sheet No.: D2-A04401EN 2 PC715V0NSZX Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Sheet No.: D2-A04401EN 3 PC715V0NSZX Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 35 6 80 150 170 −25 to +100 −40 to +125 5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF Peak forward voltage VFM Reverse current IR Terminal capacitance Ct ICEO Collector dark current Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance fC Cut-off frequency tr Rise time Response time Fall time tf Conditions IF=10mA IFM=0.5V VR=4V V=0, f=1kHz VCE=10V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=1mA, VCE=2V IF=20mA, IC=5mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω −3dB VCE=2V, IC=10mA, RL=100Ω MIN. − − − − − 35 6 6.0 − 5×1010 − − − − TYP. 1.2 − − 30 − − − 16.0 − 1×1011 0.6 6 60 53 MAX. 1.4 3.0 10 250 1 000 − − 75.0 1.0 − 1.0 − 250 250 (Ta=25˚C) Unit V V µA pF nA V V mA V Ω pF kHz µs µs Sheet No.: D2-A04401EN 4 PC715V0NSZX Series ■ Model Line-up Through-Hole Sleeve Package 50pcs/sleeve VDE0884 −−−−−− Approved Model No. PC715V0NSZX PC715V0YSZX Lead Form Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A04401EN 5 PC715V0NSZX Series Fig.1 Forward Current vs. Ambient Temperature Fig.2 Diode Power Dissipation vs. Ambient Temperature 60 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −25 0 25 50 75 100 80 70 60 40 20 0 −25 125 0 Ambient temperature Ta (˚C) Fig.4 Total Power Dissipation vs. Ambient Temperature Fig.3 Collector Power Dissipation vs. Ambient Temperature 200 250 Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 25 55 75 100 Ambient temperature Ta (˚C) 150 100 50 0 −25 0 25 50 75 100 200 170 150 100 50 0 −25 125 0 Ambient temperature Ta (˚C) Fig.5 Peak Forward Current vs. Duty Ratio 25 50 75 100 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage 10 Ta=75˚C Pulse width≤100µs Ta=25˚C Forward current IF (mA) Peak forward current IFM (A) 50˚C 1 0.1 25˚C 0˚C 100 −25˚C 10 1 0.01 10−3 10−2 10−1 1 0 Duty ratio 0.5 1 1.5 2 2.5 3 3.5 Forward voltage VF (V) Sheet No.: D2-A04401EN 6 PC715V0NSZX Series Fig.8 Collector Current vs. Collectoremitter Voltage Fig.7 Current Transfer Ratio vs. Forward Current 16 2 000 VCE=2V Ta=25˚C Ta=25˚C IF=1mA 0.9mA 14 PC(MAX.) 1 600 Collector current IC (mA) Current transfer ratio CTR (%) 1 800 1 400 1 200 1 000 800 600 12 0.8mA 10 0.7mA 0.6mA 8 0.5mA 6 0.4mA 4 400 0.3mA 2 200 0.2mA 0.1mA 0 0 0.1 1 0 10 1 2 3 4 5 6 7 8 9 10 11 12 13 Collector-emitter voltage VCE (V) Forward current IF (mA) Fig.9 Collector Current vs. Collectoremitter Voltage 100 Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 150 Ta=25˚C Relative current transfer ratio (%) 90 Collector current IC (mA) 80 70 IF=10mA PC (MAX.) 60 50 5mA 40 2mA 30 20 1mA IF=1mA VCE=2V 100 50 10 0 −25 0 0 1 2 3 4 5 0 Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature 75 100 Fig.12 Collector Dark Current vs. Ambient Temperature 10−5 1 VCE=10V IF=20mA IC=5mA −6 0.8 Collector dark current ICEO (A) Collector-emitter saturation voltage VCE(SAT) (V) 50 Ambient temperature Ta (˚C) Collector-emitter voltage VCE (V) 0.6 0.4 0.2 0 −25 25 0 25 50 75 10 10−7 10−8 10−9 10−10 10−11 −25 100 Ambient temperature Ta (˚C) 0 25 50 75 100 Ambient temperature Ta (˚C) Sheet No.: D2-A04401EN 7 PC715V0NSZX Series Fig.13 Response Time vs. Load Resistance Response time (µs) 1 000 Fig.14 Test Circuit for Response Time VCE=2V IC=10mA Ta=25˚C VCC Input tf RD RL Output tr 100 Input VCE Output 10% 90% td tr ts tr td 10 Please refer to the conditions in Fig.13 ts 1 0.1 1 10 Load resistance RL (kΩ) Fig.15 Frequency Response Fig.16 Test Circuit for Frequency Response 10 VCC Voltage gain Av (dB) VCE=2V IC=2mA Ta=25˚C RL 0 Output RD VCE −10 RL=10kΩ 1kΩ 100Ω Please refer to the conditions in Fig.15 −20 0.1 1 10 100 Frequency f (kHz) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A04401EN 8 PC715V0NSZX Series ■ Design Considerations ● Design guide While operating at IF