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TS1107-200ITQ1633T

TS1107-200ITQ1633T

  • 厂商:

    SILABS(芯科科技)

  • 封装:

    WFQFN16_EP

  • 描述:

    ICAMPPRECCSHISID200V16TQFN

  • 数据手册
  • 价格&库存
TS1107-200ITQ1633T 数据手册
TS1107/10 Data Sheet Electronic Circuit Breaker: High Side Current Sense Amplifier with Current Limiter Comparator and FET Control (TS1110 only) The TS1110 Electronic Circuit Breaker uses a bidirectional current-sense amplifier for current limit detection to disconnect the load by use of an external P-channel MOSFET. An internal Current Limit Comparator with an adjustable threshold provides a latch capable output to signal when a fault condition has occurred. Once the Current Limit Comparator’s output is latched the internal FET control is enabled which drives the gate of the external P-channel MOSFET, disconnecting the load from the power supply. Once the fault condition is removed, the system may be reset by strobing or pulling the latch enable pin, CLATCH, low. The Circuit Breaker system delay of the TS1110 is typically 428 µs. The Current Limiter system delay of the TS1107 and TS1110 is typically 670 µs. Applications • Power Management Systems • Portable/Battery-Powered Systems • Smart Chargers • Battery Monitoring • Overcurrent and Undercurrent Detection • Remote Sensing • Industrial Controls KEY FEATURES • Circuit Breaker with Latching Load Disconnect • Internal Latching Current Limiter Comparator with CLATCH Reset • Programmable Current Limit • COUT Output Signals Fault Condition • Low Supply Current • Current Sense Amplifier: 0.68 µA • TS1110 IVDD: 1.16 µA • TS1107 IVDD: 1.15 µA • High Side Bidirectional Current Sense Amplifier • Wide CSA Input Common Mode Range: +2 V to +27 V • Low CSA Input Offset Voltage: 150 µV(max) • Low Gain Error: 1% (max) • Two Gain Options Available for TS1107 and TS1110: • Gain = 20 V/V : TS1107-20 and TS1110-20 • Gain = 200 V/V : TS1107-200 and TS1110-200 • 16-Pin TQFN Packaging (3 mm x 3 mm) silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 TS1107/10 Data Sheet Ordering Information 1. Ordering Information Table 1.1. Ordering Part Numbers Ordering Part Number Description FET Control Gain V/V TS1107-20ITQ1633 Electronic Circuit Breaker: High Side Current Sense Amplifier with Current Limiter Comparator No 20 TS1107-200ITQ1633 Electronic Circuit Breaker: High Side Current Sense Amplifier with Current Limiter Comparator No 200 TS1110-20ITQ1633 Electronic Circuit Breaker: High Side Current Sense Amplifier with Current Limiter Comparator and FET Control Yes 20 TS1110-200ITQ1633 Electronic Circuit Breaker: High Side Current Sense Amplifier with Current Limiter Comparator and FET Control Yes 200 Note: Adding the suffix “T” to the part number (e.g. TS1107-200ITQ1633T) denotes tape and reel. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 1 TS1107/10 Data Sheet System Overview 2. System Overview 2.1 Functional Block Diagrams Figure 2.1. TS1110 Current Limit with FET Control Block Diagram Figure 2.2. TS1107 Current Limit Block Diagram silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 2 TS1107/10 Data Sheet System Overview 2.2 Current Sense Amplifier + Output Buffer The internal configuration of the TS1107/10 bidirectional current-sense amplifier is a variation of the TS1101 bidirectional current-sense amplifier. The TS1107/10 current-sense amplifier is configured for fully differential input/output operation. Referring to the block diagram, the inputs of the TS1107/10’s differential input/output amplifier are connected to RS+ and RS– across an external RSENSE resistor that is used to measure current. At the non-inverting input of the current-sense amplifier, the applied voltage difference in voltage between RS+ and RS– is ILOAD x RSENSE. Since the RS– terminal is the non-inverting input of the internal opamp, the current-sense op-amp action drives PMOS[1/2] to drive current across RGAIN[A/B] to equalize voltage at its inputs. Thus, since the M1 PMOS source is connected to the inverting input of the internal op-amp and since the voltage drop across RGAINA is the same as the external VSENSE, the M1 PMOS drain-source current is equal to: I DS (M 1) = V SENSE RGAINA or I DS (M 1) = I LOAD × RSENSE RGAINA The drain terminal of the M1 PMOS is connected to the transimpedance amplifier’s gain resistor, ROUT, via the inverting terminal. The non-inverting terminal of the transimpedance amplifier is internally connected to VBIAS, therefore the output voltage of the TS1107/10 at the OUT terminal is: ROUT V OUT = V BIAS − I LOAD × RSENSE × RGAINA When the voltage at the RS– terminal is greater than the voltage at the RS+ terminal, the external VSENSE voltage drop is impressed upon RGAINB. The voltage drop across RGAINB is then converted into a current by the M2 PMOS. The M2 PMOS drain-source current is the input current for the NMOS current mirror which is matched with a 1-to-1 ratio. The transimpedance amplifier sources the M2 PMOS drain-source current for the NMOS current mirror. Therefore the output voltage of the TS1107/10 at the OUT terminal is: ROUT V OUT = V BIAS + I LOAD × RSENSE × RGAINB When M1 is conducting current (VRS+ > VRS–), the TS1107/10’s internal amplifier holds M2 OFF. When M2 is conducting current (VRS– > VRS+), the internal amplifier holds M1 OFF. In either case, the disabled PMOS does not contribute to the resultant output voltage. The current-sense amplifier’s gain accuracy is therefore the ratio match of ROUT to RGAIN[A/B]. For each of the gain options available, The following table lists the values for RGAIN[A/B]. Table 2.1. Internal Gain Setting Resistors (Typical Values) GAIN (V/V) RGAIN[A/B] (Ω) ROUT (Ω) Part Number 20 2k 40 k TS1110-20 200 200 40 k TS1110-200 20 2k 40 k TS1107-20 200 200 40 k TS1107-200 The TS1107/10 allows access to the inverting terminal of the transimpedance amplifier by the FILT pin, whereby a series RC filter may be connected to reduce noise at the OUT terminal. The recommended RC filter is 4 kΩ and 0.47 μF connected in series from FILT to GND to suppress the noise. Any capacitance at the OUT terminal should be minimized for stable operation of the buffer. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 3 TS1107/10 Data Sheet System Overview 2.3 Sign Output The TS1107/10 SIGN output indicates the load current’s direction. The SIGN output is a logic HIGH when M1 is conducting current (VRS+ > VRS–). Alternatively, the SIGN output is a logic LOW when M2 is conducting current (VRS– > VRS+). The SIGN comparator’s transfer characteristic is illustrated in Figure 1. Unlike other current-sense amplifiers that implement an OUT/SIGN arrangement, the TS1107/10 exhibits no “dead zone” at ILOAD switchover. Figure 2.3. TS1107/10 Sign Output Transfer Characteristic 2.4 Current Limit Comparator The TS1107/10 provides a comparator which can be used for current limit detection. The current limit threshold can be set to detect either positive or negative current, though it provides fastest response in the positive direction. In a typical configuration, the inverting terminal, CIN– is connected to OUT. The non-inverting terminal of the comparator, CIN+, should be supplied with an external voltage or a resistor divider from the supply voltage, which is used as the threshold voltage for the current limiter. The output of the comparator is latch capable only when the Sign Comparator is HIGH (VRS+>VRS–), and CLATCH is held HIGH. Once the comparator output (COUT) is triggered, COUT will latch HIGH and maintain the HIGH state as long as CLATCH is held HIGH. To reset COUT to the default comparator output state, CLATCH must be held or strobed LOW. 2.5 FET Control (TS1110 Only) A “circuit breaker” feature is supplied within the TS1110 as a FET control which drives the gate drive of an external P-channel MOSFET. When the Current Limit Comparator’s output goes HIGH and the LATCH feature is enabled, the FET control output will latch HIGH thereby disconnecting current flow to the load by holding the gate of the external PMOS HIGH. To resume current flow to the load, the FET control must be brought low by holding or strobing CLATCH low. The output of the comparator controls the gate logic of an internal FET whereby the source is connected to the non-inverting terminal of the CSA, RS+, while the drain is fed to the FET pin. The FET pin is intended to drive the gate of an external PMOS, where the PMOS source is connected to the inverting terminal of the CSA, RS–, and the drain is connected to the external load. FET will maintain its logic LOW state while the comparator output, COUT, is LOW. When COUT is latched HIGH, the FET pin will latch to a HIGH state, thereby switching and holding the external PMOS OFF. The FET control features a Turn ON Time, tFET(ON), of 720 ns(typ) and a Turn OFF Time, tFET(OFF), of 2.9 ms(typ) when driving a 860 pF gate capacitance. Note that the FET Control is a pull-up only. A pull-down resistor is required from the external FET’s gate to ground to ensure the FET is normally ON. 2.6 VREF Divider The TS1107/10 provides an internal voltage divider network to set VBIAS, eliminating the need for externally setting the voltage. The VREF Divider is activated once the voltage applied to VREF is 0.9 V or greater. The VREF divider connects to VBIAS, where the VBIAS voltage is equal to 50% of VREF . The VREF Divider exhibits a total series resistance of 9.2 MΩ from VREF to GND. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 4 TS1107/10 Data Sheet System Overview 2.7 Selecting a Sense Resistor Selecting the optimal value for the external RSENSE is based on the following criteria and for each commentary follows: 1. RSENSE Voltage Loss 2. VOUT Swing vs. Desired VSENSE and Applied Supply Voltage at VDD 3. Total ILOAD Accuracy 4. Circuit Efficiency and Power Dissipation 5. RSENSE Kelvin Connections 2.7.1 RSENSE Voltage Loss For lowest IR power dissipation in RSENSE, the smallest usable resistor value for RSENSE should be selected. 2.7.2 VOUT Swing vs. Desired VSENSE and Applied Supply Voltage at VDD Although the Current Sense Amplifier draws its power from the voltage at its RS+ and RS– terminals, the signal voltage at the OUT terminal is provided by a buffer, and is therefore bounded by the buffer’s output range. As shown in the Electrical Characteristics table, the CSA Buffer has a maximum and minimum output voltage of: V OUT (max ) = VDD (min) − 0.2V V OUT (min ) = 0.2V Therefore, the full-scale sense voltage should be chosen so that the OUT voltage is neither greater nor less than the maximum and minimum output voltage defined above. To satisfy this requirement, the positive full-scale sense voltage, VSENSE(pos_max), should be chosen so that: V SENSE ( pos_max) < VBIAS − V OUT (min ) GAIN The negative full-scale sense voltage, VSENSE(neg_min), should be chosen so that: V SENSE (neg_min ) < V OUT (max ) − VBIAS GAIN For best performance, RSENSE should be chosen so that the full-scale VSENSE is less than ±75 mV. 2.7.3 Total Load Current Accuracy In the TS1107/10’s linear region where VOUT(min) < VOUT < VOUT(max), there are two specifications related to the circuit’s accuracy: a) the TS1107/10 CSA’s input offset voltage (VOS(max) = 150 μV), b) the TS1107/10 CSA’s gain error (GE(max) = 1%). An expression for the TS1110’s total error is given by: V OUT = VBIAS − GAIN × (1 ± GE ) × V SENSE ± (GAIN × V OS ) A large value for RSENSE permits the use of smaller load currents to be measured more accurately because the effects of offset voltages are less significant when compared to larger VSENSE voltages. Due care though should be exercised as previously mentioned with large values of RSENSE. 2.7.4 Circuit Efficiency and Power Dissipation IR loses in RSENSE can be large especially at high load currents. It is important to select the smallest, usable RSENSE value to minimize power dissipation and to keep the physical size of RSENSE small. If the external RSENSE is allowed to dissipate significant power, then its inherent temperature coefficient may alter its design center value, thereby reducing load current measurement accuracy. Precisely because the TS1107/10 CSA’s input stage was designed to exhibit a very low input offset voltage, small RSENSE values can be used to reduce power dissipation and minimize local hot spots on the pcb. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 5 TS1107/10 Data Sheet System Overview 2.7.5 RSENSE Kelvin Connections For optimal VSENSE accuracy in the presence of large load currents, parasitic pcb track resistance should be minimized. Kelvin-sense pcb connections between RSENSE and the TS1107/10’s RS+ and RS– terminals are strongly recommended. The drawing below illustrates the connections between the current-sense amplifier and the current-sense resistor. The pcb layout should be balanced and symmetrical to minimize wiring-induced errors. In addition, the pcb layout for RSENSE should include good thermal management techniques for optimal RSENSE power dissipation. Figure 2.4. Making PCB Connections to RSENSE 2.7.6 RSENSE Composition Current-shunt resistors are available in metal film, metal strip, and wire-wound constructions. Wire-wound current-shunt resistors are constructed with wire spirally wound onto a core. As a result, these types of current shunt resistors exhibit the largest self-inductance. In applications where the load current contains high-frequency transients, metal film or metal strip current sense resistors are recommended. 2.7.7 Internal Noise Filter In power management and motor control applications, current-sense amplifiers are required to measure load currents accurately in the presence of both externally-generated differential and common-mode noise. An example of differential-mode noise that can appear at the inputs of a current-sense amplifier is high-frequency ripple. High-frequency ripple (whether injected into the circuit inductively or capacitively) can produce a differential-mode voltage drop across the external current-shunt resistor, RSENSE. An example of externallygenerated, common-mode noise is the high-frequency output ripple of a switching regulator that can result in common-mode noise injection into both inputs of a current-sense amplifier. Even though the load current signal bandwidth is dc, the input stage of any current-sense amplifier can rectify unwanted, out-of-band noise that can result in an apparent error voltage at its output. Against common-mode injection noise, the current-sense amplifier’s internal common-mode rejection ratio is 130 dB (typ). To counter the effects of externally-injected noise, the TS1107/10 incorporates a 50 kHz (typ), 2nd-order differential low-pass filter as shown in the TS1107/10’s block diagram, thereby eliminating the need for an external low-pass filter which can generate errors in the offset voltage and the gain error. 2.7.8 PC Board Layout and Power-Supply Bypassing For optimal circuit performance, the TS1107/10 should be in very close proximity to the external current-sense resistor and the pcb tracks from RSENSE to the RS+ and the RS– input terminals of the TS1107/10 should be short and symmetric. Also recommended are surface mount resistors and capacitors, as well as a ground plane. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 6 TS1107/10 Data Sheet Electrical Characteristics 3. Electrical Characteristics Table 3.1. Recommended Operating Conditions1 Parameter Symbol Conditions Min Typ Max Units 1.7 — 5.25 V 2 — 27 V System Specifications Operating Voltage Range VDD Common-Mode Input Range VCM VRS+, Guaranteed by CMRR Note: 1. All devices 100% production tested at TA = +25 °C. Limits over Temperature are guaranteed by design and characterization. Table 3.2. DC Characteristics1 Parameter Symbol Conditions Min Typ Max Units IRS+ + IRS– See Note 2 — 0.68 1.2 μA TS1107 — 1.15 1.84 μA TS1110 — 1.16 1.85 μA System Specifications No Load Input Supply Current IVDD See Note 2 Current Sense Amplifier Common Mode Rejection Ratio CMRR 2 V < VRS+ < 27 V 120 130 — dB VOS TA = +25 °C — ±100 ±150 μV –40 °C < TA < +85 °C — — ±200 μV VHYS TA = +25 °C — 10 — μV G TS1107-20, TS1110-20 — 20 — V/V TS1107-200, TS1110-200 — 200 — V/V TA = +25 °C — ±0.1 ±0.6 % –40 °C < TA < +85 °C — — ±1 % TA = +25 °C — ±0.6 ±1 % –40 °C < TA < +85 °C — — ±1.4 % TA = +25 °C — ±0.6 ±1 % –40 °C < TA < +85 °C — — ±1.4 % ROUT From FILT to OUT 28 40 52.8 kΩ Input Bias Current IBuffer_BIAS –40 °C < TA < +85 °C — 0.3 — nA Input referred DC Offset VBuffer_OS — — ±2.5 mV Input Offset Voltage3 VOS Hysteresis4 Gain Positive Gain Error5 Negative Gain Error5 Gain Match5 Transfer Resistance GE+ GE– GM CSA Buffer Offset Drift Input Common Mode Range TCVBuffer_OS –40 °C < TA < +85 °C — 0.6 — μV/°C VBuffer_CM –40 °C < TA < +85 °C 0.2 — VDD – 0.2 V silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 7 TS1107/10 Data Sheet Electrical Characteristics Parameter Symbol Conditions Min Typ Max Units VOUT(min,max) IOUT = ±150 μA 0.2 — VDD – 0.2 V Output Low Voltage VSIGN_OL VDD = 1.8 V, ISINK = 35 μA — — 0.2 V Output High Voltage VSIGN_OH VDD = 1.8 V, ISOURCE = 35 μA VDD – 0.2 — — V Input Bias Current ICIN–_BIAS CIN– — 0.3 — nA Input Bias Current ICIN+_BIAS CIN+ — 0.3 — nA Input referred DC offset VC_OS –40 °C < TA < +85 °C — — ±4 mV Input Common Mode Range VC_CM 0.4 — VDD V Output Range Sign Comparator Parameters Comparator COUT Output Range CLATCH Input Voltage VCOUT(min,max) ICOUT = ±500 μA; VDD = 1.7 V 0.4 — VDD – 0.4 V CLATCHLo Low CMOS Logic Level — — 0.4 V CLATCHHi High CMOS Logic Level VDD – 0.4 — — V IFET_Leakage TA = +25 °C — — 4.5 nA IFET_Source(max) TA = +25 °C — 3.2 17.4 mA RFET_ON TA = +25 °C — 487 794 Ω VREF(min) VREF Rising edge — — 0.9 V — 9.2 — MΩ 0.495 0.5 0.505 V FET Control (TS1110 Only) FET Leakage FET Sourcing Current FET Internal On Resistance VREF Divider VREF Activation voltage Resistor on VREF RVREF VBIAS VVBIAS VREF = 1 V Note: 1. RS+ = RS– = 3.6 V; VSENSE =(VRS+ – VRS–) = 0 V; VDD = 3 V; VBIAS = 1.5 V; CIN+ = 0.75 V; VREF = GND; CLATCH = GND; RFET = 1 MΩ; FILT connected to 4 kΩ and 470 nF in series to GND. TA = TJ = –40 °C to +85 °C unless otherwise noted. Typical values are at TA=+25 °C. 2. Extrapolated to VOUT = VFILT; IRS+ + IRS– is the total current into the RS+ and the RS– pins. 3. Input offset voltage VOS is extrapolated from a VOUT(+) measurement with VSENSE set to +1 mV and a VOUT(–) measurement with VSENSE set to –1 mV; average VOS = (VOUT(–) – VOUT(+))/(2 x GAIN). 4. Amplitude of VSENSE lower or higher than VOS required to cause the comparator to switch output states. 5. Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer characteristic. For GAIN = 20 V/V, the applied VSENSE for GE± is ±25 mV and ±60 mV. For GAIN = 200 V/V, the applied VSENSE for GE± is ±2.5 mV and ±6 mV silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 8 TS1107/10 Data Sheet Electrical Characteristics Table 3.3. AC Characteristics1 Parameter Symbol Conditions Min Typ Max Units — 1.35 — msec VSENSE = ±1 mV — 3 — msec VSENSE = ±10 mV — 0.4 — msec CSA Buffer Output Settling time tOUT_s 1% Final value, VOUT = 1.3 V Gain = 20 V/V Sign Comparator Propagation Delay tSIGN_PD Comparator Rising Propagation Delay tC_PDR Overdrive = 10 mV, CCOUT = 15 pF — 9 — μs Comparator Hysteresis VC_HYS CIN– falling — 20 — mV TFET(ON) See Note 2 — 0.255 — μs FET Control (TS1110 Only) FET Turn ON Time Note: 1. RS+ = RS– = 3.6 V, VSENSE = (VRS+ – VRS–) = 0 V, VDD = 3 V, VBIAS = 1.5 V. TA = TJ = –40 °C to +85 °C unless otherwise noted. Typical values are at TA = +25 °C. 2. Delay after comparator is triggered. Refer to FET ON Time vs. Gate Capacitance graph. Table 3.4. Thermal Conditions Parameter Operating Temperature Range Symbol TOP silabs.com | Smart. Connected. Energy-friendly. Conditions Min Typ Max Units –40 — +85 °C Rev. 1.0 | 9 TS1107/10 Data Sheet Electrical Characteristics Table 3.5. Absolute Maximum Limits Parameter Symbol Conditions Min Typ Max Units RS+ Voltage VRS+ –0.3 — 27 V RS– Voltage VRS– –0.3 — 27 V FET Voltage (TS1110 Only) VFET –0.3 — 27 V Supply Voltage VDD –0.3 — 6 V OUT Voltage VOUT –0.3 — 6 V SIGN Voltage VSIGN –0.3 — 6 V FILT Voltage VFILT –0.3 — 6 V VCLATCH –0.3 — 6 V COUT Voltage VCOUT –0.3 — 6 V VREF Voltage VVREF –0.3 — 6 V CIN+ Voltage VCIN+ –0.3 — VDD + 0.3 V CIN– Voltage VCIN– –0.3 — VDD + 0.3 V VBIAS Voltage VVBIAS –0.3 — VDD + 0.3 V VRS+ – VRS– — — 27 V Short Circuit Duration: OUT to GND — — Continuous Continuous Input Current (Any Pin) –20 — 20 mA — — 150 °C –65 — 150 °C Lead Temperature (Soldering, 10 s) — — 300 °C Soldering Temperature (Reflow) — — 260 °C Human Body Model — — 2000 V Machine Model — — 200 V CLATCH Voltage RS+ to RS– Voltage Junction Temperature Storage Temperature Range ESD Tolerance silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 10 TS1107/10 Data Sheet Electrical Characteristics For the following graphs, VRS+ = VRS– = 3.6 V; VDD = 3 V; VREF = GND; VBIAS = 1.5 V, CIN+ = 0.75 V, CLATCH = VDD, CIN– = OUT, RFET = 1 MΩ, CFET = 820 pF, and TA = +25 C unless otherwise noted. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 11 TS1107/10 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 12 TS1107/10 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 13 TS1107/10 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 14 TS1107/10 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 15 TS1107/10 Data Sheet Typical Application Circuit 4. Typical Application Circuit Figure 4.1. TS1110 Typical Application Circuit Figure 4.2. TS1107 Typical Application Circuit silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 16 TS1107/10 Data Sheet Pin Descriptions 5. Pin Descriptions TS1110 TS1107 Table 5.1. Pin Descriptions Pin Label Function 1 SIGN Sign output. SIGN is HIGH for VRS+ > VRS– and LOW for VRS– > VRS+. 2 VDD External power supply pin. Connect this to the system’s VDD supply. 3 VBIAS 4 GND Ground. Connect to analog ground. 5 CIN– Inverting terminal of Current Limiter Comparator. Connect to OUT. 6 CIN+ Non-inverting terminal of Current Limiter Comparator. Connect an external reference voltage to set current limit. 7 NC 8 VREF Voltage reference. To activate, a minimum voltage of 0.9V is required. To disable voltage divider, connect to analog ground, GND. 9 OUT CSA buffered output. Connect to CIN–. 10 FILT Inverting terminal of CSA Buffer. Connect a series RC Filter of 4kΩ and 0.47µF, otherwise leave open. 11 RS+ External Sense Resistor Power-Side Connection 12 RS– External Sense Resistor Load-Side Connection. For TS1110 only, connect external PFET’s source to RS– pin and connect load to PFET’s drain. For TS1107, connect load directly to RS– pin. 13 FET TS1110 External PFET Gate Connection. Connect an external pull-down resistor of 1MΩ. NC TS1107 No connection. Leave open. 14 NC No connection. Leave open. 15 CLATCH 16 COUT Current Limiter Comparator Output. Exposed Pad EPAD Exposed backside paddle. For best electrical and thermal performance, solder to analog ground. Bias voltage for CSA output. When VREF is activated, leave open. No connection. Leave open. Current Limiter Comparator Latch Enable. CLATCH must be HIGH for latch enable. To disable latch, CLACTH must be held LOW. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 17 TS1107/10 Data Sheet Packaging 6. Packaging Figure 6.1. TS1107/10 3x3 mm 16-QFN Package Diagram Table 6.1. Package Dimensions Dimension Min Nom Max A 0.70 0.75 0.80 A1 0.00 0.02 0.05 b 0.20 0.25 0.30 C1 1.50 REF C2 0.25 REF D 3.00 BSC D2 1.90 2.00 e 0.50 BSC E 3.00 BSC 2.10 E2 1.90 2.00 2.10 L 0.20 0.25 0.30 aaa — — 0.05 bbb — — 0.05 ccc — — 0.05 ddd — — 0.10 Note: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 18 TS1107/10 Data Sheet Top Marking 7. Top Marking Figure 7.1. Top Marking Table 7.1. Top Marking Explanation Mark Method Laser Pin 1 Mark: Circle = 0.50 mm Diameter (lower left corner) Font Size: 0.50 mm (20 mils) Line 1 Mark Format: Product ID Note: A = 20 gain, B = 200 gain Line 2 Mark Format: TTTT – Mfg Code Manufacturing code Line 3 Mark Format: YY = Year; WW = Work Week Year and week of assembly silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 19 Table of Contents 1. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2. System Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.1 Functional Block Diagrams . . . . . . . . . . . . . . . . . . . . . 2 2.2 Current Sense Amplifier + Output Buffer . . . . . . . . . . . . . . . . . . . . . 3 2.3 Sign Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.4 Current Limit Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.5 FET Control (TS1110 Only) . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.6 VREF Divider . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.7 Selecting a Sense Resistor . . . . . . . . . . . . . . . . 2.7.1 RSENSE Voltage Loss . . . . . . . . . . . . . . . . . 2.7.2 VOUT Swing vs. Desired VSENSE and Applied Supply Voltage at VDD. 2.7.3 Total Load Current Accuracy . . . . . . . . . . . . . . . 2.7.4 Circuit Efficiency and Power Dissipation . . . . . . . . . . . 2.7.5 RSENSE Kelvin Connections . . . . . . . . . . . . . . . 2.7.6 RSENSE Composition . . . . . . . . . . . . . . . . . 2.7.7 Internal Noise Filter . . . . . . . . . . . . . . . . . . 2.7.8 PC Board Layout and Power-Supply Bypassing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 5 6 6 6 6 3. Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4. Typical Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . 16 5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6. Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7. Top Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table of Contents 20 Smart. Connected. Energy-Friendly Products Quality Support and Community www.silabs.com/products www.silabs.com/quality community.silabs.com Disclaimer Silicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Laboratories reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Laboratories shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products must not be used within any Life Support System without the specific written consent of Silicon Laboratories. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Laboratories products are generally not intended for military applications. Silicon Laboratories products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons. Trademark Information Silicon Laboratories Inc., Silicon Laboratories, Silicon Labs, SiLabs and the Silicon Labs logo, CMEMS®, EFM, EFM32, EFR, Energy Micro, Energy Micro logo and combinations thereof, "the world’s most energy friendly microcontrollers", Ember®, EZLink®, EZMac®, EZRadio®, EZRadioPRO®, DSPLL®, ISOmodem ®, Precision32®, ProSLIC®, SiPHY®, USBXpress® and others are trademarks or registered trademarks of Silicon Laboratories Inc. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is a registered trademark of ARM Limited. All other products or brand names mentioned herein are trademarks of their respective holders. Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 USA http://www.silabs.com
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