SLD-68E1

SLD-68E1 Planar Photodiode Features • Planar photodiode • Low capacitance • Fast switching time • Low leakage current • Linear response vs irradiance • TO-46 base with epoxy dome lens • Multiple dark current ranges available Description This planar, passivated silicon photodetector is designed to operate in either photovoltaic or reverse bias mode to provide low capacitance with fast switching speed. It provides excellent linearity in output signal versus light intensity. Low dark current and low capacitance make it the ideal detector for fast rise time applications. Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (3) -20°C to +75°C -20°C to +75°C 260°C 25 min. 2.8 max. 45° ø 5.33 4.22 0.41 - 0.48 2.54 Chip Size = 1.7 mm X 1.7 mm Active Area = 2.0 sq.mm. Dimensions in mm. Tolerance: +/-0.13 Anode + Cathode (common to case) Directional Sensitivity Characteristics 40° 50° 30° 20° 10° 1.0 0.8 0.6 0.4 0.2 0.0 Half Angle = 40° 60° 70° 80° 90° 100° 1.0 Notes: (1) Ee = light source @ 2854 °K (2) Ee = light source @ λ = 880 nm (3) >2 mm from case for