SLD-68HL1

SLD-68HL1 Planar Photodiode Features • • • • • • Low capacitance Fast switching time Low leakage current Linear response vs irradiance Hermetic TO-46 package with high dome lens Multiple dark current ranges available 1.0 5.1 0.50-0.52 4.7 ø 5.3 CATHODE (Common to case) 2.5 Description This small area planar, passivated silicon photodetector is designed to operate in either photovoltaic or reverse bias mode. It provides excellent linearity in output signal versus irradiance. This is an ideal detector for fast rise time applications. Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (1) -40°C to +125°C -40°C to +125°C 260°C 60° 25.4 Min. Chip Size = 1.7 mm X 1.7 mm Active Area = 2.0 sq.mm. Anode 45° Dimensions in mm. (+/- 0.13) Directional Sensitivity Characteristics 40° 50° 0.8 0.6 0.4 0.2 0.0 30° 20° 10° 1.0 Half Angle = 15° 70° Notes: (1) >2 mm from case for