SLD-70C1

SLD-70C1 Planar Photodiode Features • Planar Photodiode • Low capacitance • Fast switching time • Low leakage current • Linear response vs irradiance • Multiple dark current ranges available Description The Silonex SLD-70C1 planar photodiode is designed to operate in either photoconductive or photovoltaic modes. High sensitivity and low dark current allow use in even low irradiance applications. The photodiode is supplied on a ceramic base with a clear epoxy dome package. Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (3) -20°C to +75°C -20°C to +75°C 260°C 25.4 Min Clear Epoxy 6.3 Red dot Anode 7.2 5.1 0.50-0.52 3.4 Max Chip Size = 1.7 mm X 1.7 mm Active Area = 2.0 sq.mm. Cathode Dimensions in mm. (+/- 0.2) Directional Sensitivity Characteristics 40° 50° 30° 20° 10° 1.0 0.8 0.6 0.4 0.2 0.0 Half Angle = 60° 60° 70° 80° 90° 100° 1.0 Notes: (1) Ee = source @ 2854°K. (2) Ee = source @ λ = 880 nm (3) >2 mm from case for < 5 sec. 0.8 0.6 0.4 20° 40° 60° 80° 100° 120° Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Min Typ ISC Short Circuit Current 120 180 VOC Open Circuit Voltage 0.40 ID Reverse Dark Current: SLD-70C1A SLD-70C1B SLD-70C1C SLD-70C1D SLD-70C1E CJ Junction Capacitance 50 tR Rise Time 1.0 tF Fall Time 1.5 TCI Temp. Coef., ISC +0.2 VBR Reverse Breakdown Voltage 50 Maximum Sensitivity Wavelength 930 λP Sensitivity Spectral Range 400 λR Acceptance Half Angle 60 θ1/2 Specifications subject to change without notice. Max Units µA V nA nA nA nA pA pF µs µs %/°C V nm nm deg Test Conditions VR=0V, Ee=25mW/cm2 (1) Ee=25mw/cm2 (1) VR=100mV, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=0, Ee=0, f=1MHz VR=5V, RL=1kΩ (2) VR=5V, RL=1kΩ (2) (1) IR=100µA 100 100 10 1 250 1100 (off center-line) 101421 REV 3 5200 St. Patrick St., Montreal Que., H4E 4N9, Canada Tel: 514-768-8000 Fax: 514-768-8889 QF-84 The Old Railway, Princes Street Ulverston, Cumbria, LA12 7NQ, UK Tel: 01 229 581 551 Fax: 01 229 581 554