SID200S12

SID200S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg AC, 1min o 310(220) 620(440) _ +20 _ 40...+150(125) 4000 190(130) 620(440) 1450 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SID200S12 SPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC = 6mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =150A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min. 4.8 typ. max. Units V mA V m V nF 20 res., terminal-chip TC = 25(125) C under following conditions: VCC = 600V, IC = 150A RGon = RGoff = 7 , Tj = 125oC VGE = ± 15V o 5.5 6.45 0.2 0.6 1(0.9) 1.15(1.05) 6(8) 8(10) 1.9(2.1) 2.35(2.55) 13 2 2 0.35(0.5) 125 50 620 55 18(15) 2(1.8) 1.1 6 190 24 8 0.095 0.25 0.038 2.5 1.2 8.7 nH m ns ns ns ns mJ V V m A uC mJ K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 150A; Tj = 125oC Qrr di/dt = 4800A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w 3 2.5 5 5 325