NGA-586

Product Description NGA-586 Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-586 typically provides +39.6 dBm output IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25°C 24 GAIN DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier See Application Note AN-059 for Alternates OBSOLETE Product Features • High Gain : 18.6 dB at 1950 MHz • Cascadable 50 Ohm • Patented InGaP Technology • Operates From Single Supply • Low Thermal Resistance Package 0 20 Gain (dB) IRL -10 Return Loss (dB) 16 ORL -20 Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Units dB dBm dBm M Hz dB dB dB V mA °C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 72 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 17.8 Ty p. 19.8 18.6 17.9 18.9 18.5 39.6 34.0 5500 14.9 19.5 3.5 4.9 80 121 5.4 88 Max. 21.8 12 -30 8 0 1 2 3 4 Frequency (GHz) 5 6 -40 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point Bandw idth Determined by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8v RBIAS = 39 Ohms ID = 80mA Typ. TL = 25ºC Test Conditions: IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101105 Rev. OBS Preliminary OBSOLETE NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Sy mbol Parameter Unit 100 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S21 NF Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 8 V RBIAS = 39 Ohms dB dBm dBm dB dB dB dB 20.5 37.7 20.1 29.3 35.9 22.7 3.7 20.1 38.6 19.0 21.3 33.8 22.7 3.5 19.8 39.6 18.9 17.7 28.7 22.6 3.4 18.6 34.0 18.5 14.9 19.5 22.1 3.5 17.9 32.0 17.9 15.4 19.6 21.9 3.5 15.5 27.4 13.7 15.8 25 21.1 3.6 Test Conditions: ID = 80 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Noise Figure vs. Frequency VD= 4.9 V, ID= 80 mA 5.0 4.5 Noise Figure (dB) 4.0 3.5 3.0 2.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Absolute Limit 120 mA 6V +15 dBm +150°C -40°C to +85°C +150°C TL=+25ºC Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD= 4.9 V, ID= 80 mA P1dB vs. Frequency VD= 4.9 v, ID= 80 mA 45 40 OIP3 (dBm) 35 30 25 20 15 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 22 TL P1dB (dBm) +25°C -40°C +85°C 20 18 16 14 12 10 0 0.5 1 1.5 2 TL +25°C -40°C +85°C 2.5 3 3.5 Frequency (GHz) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101105 Rev. OBS Preliminary OBSOLETE NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier S21 vs. Frequency S11 vs. Frequency 25 VD= 4.9 v, ID= 80 mA 0 VD= 4.9 v, ID= 80 mA 20 S21(dB) TL +25°C -40°C +85°C -5 -10 S11(dB) -15 -20 TL +25°C -40°C +85°C 15 10 -25 5 0 1 2 3 4 Frequency (GHz) 5 6 -30 0 1 2 3 4 Frequency (GHz) 5 6 -15 -17 S12(dB) -19 -21 -23 -25 0 1 VD= 4.9 v, ID= 80 mA S12 vs. Frequency -5 -10 -15 S22(dB) -20 -25 -30 -35 VD= 4.9 v, ID= 80 mA S22 vs. Frequency TL TL +25°C -40°C +85°C +25°C -40°C +85°C 2 3 4 Frequency (GHz) 5 6 0 1 2 3 4 Frequency (GHz) 5 6 VD vs. ID over Temperature for fixed VS= 8 v, RBIAS= 39 ohms * 95 90 VD(Volts) 5.3 5.1 +85°C +25°C VD vs. Temperature for Constant ID = 80 mA 85 ID(mA) 80 75 70 65 4.6 4.9 4.7 4.5 4.3 -40°C 4.7 4.8 4.9 VD(Volts) 5.0 5.1 -40 -15 10 35 Temperature(°C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101105 Rev. OBS Preliminary OBSOLETE NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 VS CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 4 NGA-586 3 CB RF out 2 Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) 7.5 V 33 8V 39 10 V 62 12 V 91 VS RBIAS RBIAS 1 uF 1000 pF Note: RBIAS provides DC bias stability over temperature. LC N5 CD CB Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. CB Part Identification Marking The part will be marked with an “N5” designator on the top surface of the package. 3 Pin # 1 Function RF IN D escription RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance as close to ground leads as possi ble. 2, 4 GND 4 N5 1 2 3 RF OUT/ RF output and bi as pi n. D C voltage i s BIAS present on thi s pi n, therefore a D C blocki ng capaci tor i s necessary for proper operati on. Caution: ESD sensitive Part Number Ordering Information Part Number NGA-586 Reel Size 7" Devices/Reel 1000 Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101105 Rev. OBS Preliminary OBSOLETE NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier Dimensions in inches [millimeters] PCB Pad Layout Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. Nominal Package Dimensions 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101105 Rev. OBS