NGA-586

Product Description Stanford Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-586 typically provides +39.6 dBm output IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DCblocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25°C 24 GAIN NGA-586 DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features • High Gain : 18.6 dB at 1950 MHz • Cascadable 50 Ohm • Patented InGaP Technology 0 20 Gain (dB) IRL -10 16 ORL -20 Return Loss (dB) • Operates From Single Supply • Low Thermal Resistance Package Applications • Cellular, PCS, CDPD • Wireless Data, SONET • Satellite Units dB dB dB dBm dBm dBm dBm M Hz dB dB dB V °C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 17.8 Ty p. 19.8 18.6 17.9 18.9 18.5 39.6 34.0 5500 14.9 19.5 3.5 4.9 121 5.4 Max. 21.8 12 -30 8 0 1 2 3 4 Frequency (GHz) 5 6 -40 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = 0dBm) Bandw idth Determined by Return Loss (