SLD1122VS

SLD1122VS 5mW Visible Laser Diode Description The SLD1122VS is a red laser diode designed for laser pointers. This features a small package and lower power consumption. Features • Visible light (670nm typ.) • Small package (φ5.6mm) • Low operating current (Iop = 50mA typ.) • Low operating voltage (Vop = 2.4V max.) • Fundamental transverse mode Applications Laser pointers Structure • AlGaInP quantum well structure laser diode • PIN photo diode for optical power output monitor Recommended Operating Output 3mW Absolute Maximum Ratings (Tc = 25°C) • Optical power output PO 5 • Reverse voltage VR LD 2 PD 15 • Operating temperature Topr –10 to +50 • Storage temperature Tstg –40 to +85 Cinnection Diagram COMMON M-294 mW V V °C °C Pin Configuration 3 PD 2 1 LD 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93822B79-PS SLD1122VS Electrical and Optical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Perpendicular Parallel Position Angle Ith Iop Vop λ θ⊥ θ// ∆X, ∆Y, ∆Z ∆φ// ∆φ⊥ ηD As Imon PO = 3mW | Z// – Z⊥ | PO = 3mW, Vr = 5V 0.08 0.15 0.45 32 0.20 PO = 3mW PO = 3mW PO = 3mW PO = 3mW PO = 3mW 660 24 7 Symbol Conditions Min. Typ. 40 50 2.2 670 32 11 Tc: Case temperature Max. 60 70 2.4 685 40 15 ±150 ±4 ±4 0.7 Unit mA mA V nm degree degree µm degree degree mW/mA µm 0.60 mA Differential efficiency Astigmatism Monitor current –2– SLD1122VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 6 Tc = 0°C Tc = 0°C 25°C 25°C 50°C Imon 3 IF Far field pattern (FFP) Po = 3mW, Tc = 25°C Po – Optical power output [mW] 5 4 Relative radiant intensity 50°C θ⊥ θ// 2 1 0 0 20 40 60 80 –60 –40 –20 0 20 40 60 IF – Forward current [mA] 0 0.25 0.5 Imon – Monitor current [mA] Angle [degree] Threshold current vs. Temperature characteristics 200 Monitor current vs. Temperature characteristics 0.4 Po = 3mW Ith – Threshold current [mA] Imon – Monitor current [mA] –20 –10 30 100 0.3 0.2 0.1 10 0 10 20 40 50 60 Tc – Case temperature [°C] 0 –20 0 20 40 60 Tc – Case temperature [°C] –3– SLD1122VS Temperature dependence of spectrum Po = 3mW Tc = 50°C Relative radiant intensity Tc = 25°C Tc = 0°C 660 665 670 675 λ – Wavelength [nm] 680 685 –4– SLD1122VS Power dependence of spectrum Tc = 25°C Po = 5mW Relative radiant intensity Po = 3mW Po = 1mW 665 670 675 λ – Wavelength [nm] 680 –5– SLD1122VS Package Outline Unit: mm M-294 Reference Slot 0.5 3 1.0 90° 2 1 0 φ5.6 – 0.025 Window Glass φ4.4 MAX φ3.7 MAX φ1.0 MIN 0.5 MIN 0.4 ∗1.26 231 3 – φ0.45 PCD φ2.0 ∗Optical Distance = 1.35 ± 0.08 SONY CODE EIAJ CODE JEDEC CODE M-294 6.5 LD Chip & Photo Diode 1.2 ± 0.1 Reference Plane 2.6 MAX 0.25 PACKAGE WEIGHT 0.3g –6–