SLD114VS

SLD114VS Index-Guided AlGaAs Laser Diode For the availability of this product, please contact the sales office. Description The SLD114VS is an index-guided AlGaAs laser diode with the excellent droop characteristics. Features • Low droop • Small astigmatism • Small package (φ5.6mm) Applications Laser beam printers Structure • AlGaAs double hetero structured laser diode • PIN photodiode for optical power output monitor Recommended Operating Optical Power Output Absolute Maximum Ratings (Tc = 25°C) • Optical power output PO • Reverse voltage VR LD PD • Operating temperature Topr • Storage temperature Tstg 3mW M-260 5 2 15 –10 to +60 –40 to +85 mW V V °C °C Connection Diagram COMMON 3 PD 2 1 LD Pin Configuration 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94Y21-PP SLD114VS Optical and Electrical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Perpendicular Parallel Position Angle Ith Iop Vop λ θ⊥ θ// ∆X, ∆Y, ∆Z ∆φ⊥ ∆φ// ηD As Im ∆P PO = 3mW PO = 3mW PO = 3mW, Vr = 5V PO = 3mW PO = 3mW PO = 3mW PO = 3mW PO = 3mW PO = 3mW Symbol Conditions Min. 10 20 — 760 20 6 — — — 0.1 — 0.3 — Typ. 25 40 1.9 780 30 10 — — — 0.25 5 0.5 — Tc: Case temperature Max. 45 60 2.5 800 45 15 ±80 ±3 ±2 0.5 15 1.2 10 Unit mA mA V nm degree degree µm degree degree mW/mA µm mA % Differential efficiency Astigmatism Monitor current Droop –2– SLD114VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 7 Tc = 10°C 6 40°C 50°C 60°C Far field pattern (FFP) Po – Optical power output [mW] Tc = 10°C 5 4 3 2 1 0 25°C 60°C Po = 3mW, Tc = 25°C Relative radiant intensity θ⊥ θ// 0 10 20 30 40 50 60 –40 –30 –20 –10 0 10 20 30 40 IF – Forward current [mA] 0 0.5 1.0 1.5 2.0 2.5 Angle [degree] Imon – Monitor current [mA] Threshold current vs. Temperature characteristics 100 80 Monitor current vs. Temperature characteristics 1.0 0.8 0.6 Po = 3mW Ith – Threshold current [mA] 60 40 Im – Monitor current [mA] 0 20 40 60 80 0.4 20 0.2 10 –20 0.1 –20 0 20 40 60 80 Tc – Case Temperature [°C] Tc – Case Temperature [°C] –3– SLD114VS Temperature dependence of spectrum Tc = 60°C Po = 3mW Tc = 40°C Relative radiant intensity Tc = 25°C Tc = 10°C 775 780 785 λ – Wavelength [nm] 790 795 –4– SLD114VS Power output dependence of spectrum Po = 5mW Tc = 25°C Po = 3mW Relative radiant intensity Po = 2mW 770 775 780 λ – Wavelength [nm] 785 790 –5– SLD114VS Package Outline Unit: mm M-260 Reference Slot 0.5 1.0 3 90° 2 1 0 φ5.6 – 0.05 φ4.4 MAX φ3.7 MAX 0.5 MIN 0.4 23 1 3 – φ0.45 PCD φ2.0 LD Chip & Photo Diode ∗Optical Distance = 1.35 ± 0.15 SONY CODE EIAJ CODE JEDEC CODE M-260 6.5 1.2 ± 0.1 Reference Plane 2.6 MAX ∗1.26 0.25 PACKAGE WEIGHT 0.3g –6–