RMB6S

RMB2S thru RMB6S Surface Mount Bridge Rectifiers PRODUCT SUMMARY 0.8 Amps Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifiers FEATURES Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
High surge current capability
High temperature soldering guaranteed: o 260 C / 10 seconds at 5 lbs., (2.3 kg) tension
Small size, simple installation
Pure tin plated terminal, Lead free. Leads solderable per MIL-STD-202 Method 208 MBS .193(4.90) .177(4.50) .033(0.84) .022(0.56) .157(4.00) .142(3.60) .272(6.9) MAX .102(2.60) .087(2.20) .106(2.70) .090(2.30) .053(1.53) .037(0.95) .014(0.35 .006(0.15 .008(0.20) .11 4(2.9) .043(1.10) .083(2.12) MAX MAX .028(0.70) .043(1.10) Pb-free; RoHS-compliant Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current On glass-epoxy P.C.B. On aluminum substrate Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 0.4A Maximum DC Reverse Current @ TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Symbol VRRM VRMS VDC I(AV) IFSM VF IR RMB2S 200 140 200 RMB4S 400 280 400 0.5 0.8 30 1.0 RMB6S 600 420 600 Units V V V A A V uA uA nS pF o C /W o o 5.0 100 Maximum Reverse Recovery Time at (Note 1) Trr 150 Typical Junction Capacitance Per Leg Cj 13 Typical Thermal Resistance Per Leg RθJA 85 Operating Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -55 to +150 Note: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A C C 12/23/2007 Rev.1.00 www.SiliconStandard.com 1 RATINGS AND CHARACTERISTIC CURVES FIG.1- DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD RECTIFIED CURRENT. (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Resistive or Inductive Load 0 20 40 60 80 100 120 o AMBIENT TEMPERATURE. ( C) 140 160 Glass Epoxy P.C.B. Aluminum Substrate (RMB2S THRU RMB6S) FIG.2- TYPICAL REVERSE LEAKAGE CHARACTERISTICS PER LEG 100 INSTANTANEOUS REVERSE LEAKAGE CURRENT. ( A) Tj=125 0C 10 1 0.1 Tj=25 0C 35 FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG Ta=40OC Single Half Sine Wave (JEDEC Method) PEAK FORWARD SURGE CURRENT. (A) 30 25 20 15 10 5 0 F=50 Hz 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) F=60 Hz FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 10 1 Cycle 1 10 NUMBER OF CYCLES 100 FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG 30 INSTANTANEOUS FORWARD CURRENT. (A) 1 JUNCTION CAPACITANCE.(pF) 25 Tj=25 0C f=1.0MHz Vsig=50mVp-p 20 0.1 15 10 Tj=25 0C Pulse Width=300 s 1% Duty Cycle 5 0.01 0.2 0 0.1 1 10 REVERSE VOLTAGE. (V) 100 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm 12/23/2007 Rev.1.00 www.SiliconStandard.com 2 RMB2S thru RMB6S Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 12/23/2007 Rev.1.00 www.SiliconStandard.com 3