SSM03N70GP-H

SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM03N70GP-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. 700V 4.4Ω 2.5A Pb-free; RoHS-compliant TO-220 The SSM03N70GP-H is in TO-220 for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. G D S These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. TO-220 (suffix P) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS IAR Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 Value 700 ±30 2.5 1.6 8 54 0.44 3 Units V V A A A W W/°C mJ A Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy Avalanche current 32 2.5 TSTG TJ Storage temperature range Operating junction temperature range -55 to 150 -55 to 150 °C °C THERMAL CHARACTERISTICS Symbol RΘ JC RΘ JA Parameter Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Value 2.3 62 Units °C/W °C/W Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width