SSM2305GN

SSM2305GN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. D BV DSS R DS(ON) ID -20V 65mΩ -4.2A G S DESCRIPTION The SSM2305GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is suitable for low-voltage applications such as DC/DC converters and and general switching applications. D S SOT-23-3 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 ± 12 -4.2 -3.4 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol RΘJA Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit °C/W 2/16/2005 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM2305GN ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 Typ. -0.1 Max. Units 53 65 100 250 -1 -10 ±100 V V/°C mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A 9 10.6 2.32 3.68 5.9 3.6 32.4 2.6 740 167 126 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 12V ID=-4.2A VDS=-16V VGS=-4.5V VDS=-15V ID=-4.2A RG=6Ω , VGS=-10V RD=3.6Ω VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.2A, VGS=0V IS=-4.2A, VGS=0V, dI/dt=100A/µs Min. - Typ. 27.7 22 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width