SSM9972GI

SSM9972GI N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9972GI achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general switching circuits. 60V 18mΩ 35A Pb-free; RoHS-compliant TO-220CFM The SSM9972GI is in TO-220CFM for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. G D S These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. TO-220CFM (suffix I) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 Value 60 ±25 35 22 120 31 0.25 Units V V A A A W W/°C Total power dissipation, TC = 25°C Linear derating factor TSTG TJ Storage temperature range Operating junction temperature range -55 to 150 -55 to 150 °C °C THERMAL CHARACTERISTICS Symbol RΘ JC RΘ JA Parameter Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Value 4 62 Units °C/W °C/W Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width