SGA-3286

Product Description Stanford Microdevices’ SGA-3286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 35mA , the SGA-3286 typically provides +25.5 dBm output IP3, 14.3 dB of gain, and +12.2 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) SGA-3286 DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features • High Gain : 12.9 dB at 1950 MHz • Cascadable 50 Ohm • Patented SiGe Technology 20 15 Gain (dB) 10 GAIN IRL 0 -10 -20 Return Loss (dB) • Operates From Single Supply • Low Thermal Resistance Package ORL Applications • Cellular, PCS, CDPD • Wireless Data, SONET • Satellite Units dB dBm dBm M Hz dB dB dB V °C/W 1950 M Hz 1950 M Hz 1950 M Hz 2.3 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 13.0 Ty p. 14.3 13.0 12.2 12.2 11.3 24.8 24.5 5000 19.2 22.7 4.2 2.6 97 2.9 Max. 15.7 5 0 0 1 2 3 Frequency (GHz) 4 5 -30 -40 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = -5dBm) Bandw idth Determined by Return Loss (