SPF-3043

Preliminary Preliminary Product Description Stanford Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent OIP3 of 32dBm. It provides ideal performance as a driver stage in many commercial and industrial LNA applications. SPF-3043 Low Noise pHEMT GaAs FET Qualification Pending April 2001 Product Features 35 Gain, Gmax (dB) Typical Gain Performance 3V,20mA 5V,40mA 30 25 20 15 10 5 0 2 Gmax Gain • DC-10 GHz Operation • Ultra Low NF: 0.25 dB @ 1 GHz 0.50 dB @ 2 GHz • High Assoc. Gain: 25 dB @ 1 GHz 22 dB @ 2 GHz • Low Current Draw for NFopt (3V,20mA) • +32 dBm OIP3, +20 dBm P1dB (5V,40mA) • Low Cost High Performance pHEMT Applications • LNA for Wireless Infrastructure 8 10 4 6 Frequency (GHz) • Fixed Wireless Infrastructure • Wireless Data • Driver Stage for Low Power Applications Symbol GMAX S 21 NFmin P 1dB OIP3 VP IDSS gmp BVGSO BVGDO Rth Device Characteristics, T = 25ºC VDS=3V, IDS=20mA (unless otherw ise noted) Maximum Available Gain ZS=ZS*, ZL=ZL* Insertion Gain ZS=ZL=50Ω Minimum Noise Figure ZS=ΓOPT, ZL=ZL* Output 1 dB compression point ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT Pinchoff Voltage Saturated Drain Current Peak Transconductance Gate-to-Source Breakdown Voltage Gate-to-Drain Breakdown Voltage Thermal Resistance (junction to lead) f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz VDS=3V, IDS=20 mA VDS=5V, IDS=40 mA VDS=3V, IDS=20 mA VDS=5V, IDS=40 mA VDS= 2V, IDS= 0.1 mA VDS= 2V, VGS = 0V VDS= 2V, VGS @ gmp IG= 0.03 mA Drain Open, Source Grounded IG= 0.03 mA Source Open, Drain Grounded Units dB dB dB dB m dB m V mA mS V V ºC/W Min. Typ. 25.5 22.4 18.5 18.0 0.25 0.50 15.5 20 29 32 Max. -1.1 45 100 -0.8 67.5 150 -10 -10 150 -0.5 100 -8 -8 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101772 Rev. A 1 Preliminary SPF-3043 Low Noise pHEMT GaAs FET Typical Performance Gain vs Frequency (3V,20mA) 35 0 Isolation Gain vs Frequency (5V,40mA) 35 0 Isolation Gain, Gmax (dB) Gain, Gmax (dB) 30 25 20 15 10 5 0 2 4 -10 30 25 20 15 10 5 0 2 4 -10 Isolation (dB) Isolation (dB) -20 Gmax Gain -20 Gmax Gain -30 -40 -50 -60 -30 -40 -50 -60 6 8 10 6 8 10 Frequency (GHz) S11,S22 vs Frequency (3V,20mA) 1.0 0.5 2.0 Frequency (GHz) S11,S22 vs Frequency (5V,40mA) 1.0 0.5 2.0 0.2 S11 10 GHz 8 GHz 5.0 0.2 S11 10 GHz 8 GHz 5.0 0.0 0.2 0.5 S22 1.0 2.0 5.0 inf 0.0 0.2 0.5 S22 1.0 2.0 5.0 inf 6 GHz 0.2 1 GHz 2 GHz 4 GHz 3 GHz 6 GHz 5.0 0.2 1 GHz 2 GHz 4 GHz 3 GHz 5.0 0.5 2.0 0.5 2.0 1.0 1.0 Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The data represents typical performace of the device. Deembedded s-parameters can be downloaded from our website (www.stanfordmicro.com). Typical Performance Freq (MHz ) 900 1900 VDS (V) 3 5 3 5 IDS (mA) 20 40 20 40 Fmin (dB) 0.25 0.32 0.50 0.54 Γ OPT Mag ∠ Ang 0.79 ∠ 12 0.75 ∠ 12 0.62 ∠ 34 0.62 ∠ 33 rN 0.22 0.25 0.19 0.20 Gmax (dB) 25.5 26.5 22.4 23.3 P 1d B (dBm) 15.5 20.0 15.5 20.0 OIP3 (dBm) 29 32 29 32 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101772 Rev. A 2 Absolute Maximum Ratings Parameter Drain Current Forward Gate Current Drain-to-Source Voltage Gate-to-Source Voltage RF Input Power Operating Temperature Storage Temperature Range Power Dissipation Operating Junction Temperature Symbol IDS IGS VDS VGS PIN TOP Tstor PDISS TJ Value 150 2 7 -3 15 -40 to +85 -40 to +150 430 +150 Unit mA mA V V dB m C C mW C Preliminary SPF-3043 Low Noise pHEMT GaAs FET Part Number Ordering Information Part Number SPF-3043 Reel Siz e 7" Devices/Reel 3000 Part Symbolization The part will be symbolized with an “F3” and a Pin 1 indicator on the top surface of the package. Pin Description Pin # 1 2 3 4 Function Gate GND & Source Drain GND & Source RF Input Description Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2 Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 4 3 D e e Package Dimensions 1 2 L HE C L F3 C L E SYMBOL E MIN 1.15 1.85 1.80 0.80 0.80 0.00 0.10 MAX 1.35 2.25 2.40 1.10 1.00 0.10 0.40 Q1 b1 C D HE A A2 A1 b NOTE: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH & METAL BURR. 4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70. 5. DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM. ie :REVERSE TRIM/FORM. 6. PACKAGE SURFACE TO BE MIRROR FINISH. Q1 e b b1 c L 0.65 BSC 0.25 0.55 0.10 0.10 0.40 0.70 0.18 0.30 A2 A1 A Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101772 Rev. A 3