ST2317S23RG

ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are required in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23-3L l 3 l D l G S l 1 2 l 1.Gate 2.Source -40V/-5.0A, RDS(ON) = 37mΩ (Typ.) @VGS = -10V -40V/-3.0A, RDS(ON) = 51mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23-3L 3 17YW 1 Y: Year Code 2 W: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2317S23RG 2016 Rev.1 ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V ID -5.0 -3.8 A IDM -28 A Continuous Source Current (Diode Conduction) IS 3.0 A TA=25℃ TA=70℃ PD 2.0 0.81 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2317S23RG 2016 Rev.1 ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-10uA -40 VGS(th) VDS=VGS,ID=-250uA -1 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V -2.5 V VDS=0V,VGS=±20V ±100 nA VDS=-40V,VGS=0V -1 VDS=-36V,VGS=0V TJ=55℃ -5 uA 45 58 mΩ Drain-source On-Resistance RDS(on) VGS=-10V,ID=-5.0A VGS=-4.5V,ID=-3.8A 37 51 Forward Transconductance gfs VDS=-15V,ID=-3.0A 17 Diode Forward Voltage VSD IS=-1.0A,VGS=0V S -1.0 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time Crss tr td(off) tf VDS=-20V VGS=-15V ID≡-5.0A VDS=-20V VGS=0V F=1MHz VDD=-20V RL=3.3Ω VGEN=3Ω VDS=-20V 18 22 8.5 nC 3.0 950 95 pF 75 8 20 10 20 30 35 15 20 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2317S23RG 2016 Rev.1 ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2317S23RG 2016 Rev.1 ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2317S23RG 2016 Rev.1 ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2317S23RG 2016 Rev.1