74VHC245

74VHC245 OCTAL BUS TRANSCEIVER (3-STATE) s s s s s s s s s s HIGH SPEED: tPD = 4.0 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON CONTROL INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 245 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.9V (MAX.) SOP TSSOP Table 1: Order Codes PACKAGE SOP TSSOP T&R 74VHC245MTR 74VHC245TTR DESCRIPTION The 74VHC245 is an advanced high-speed CMOS OCTAL BUS TRANSCEIVER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. This IC is intended for two-way asynchronous communication between data busses; the direction of data transmission is determined by DIR input. The enable input G can be used to disable the device so that the busses are effectively isolated. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. All floating bus terminals during High Z State must be held HIGH or LOW. Figure 1: Pin Connection And IEC Logic Symbols November 2004 Rev. 6 1/12 74VHC245 Figure 2: Input Equivalent Circuit Table 2: Pin Description PIN N° 1 2, 3, 4, 5, 6, 7, 8, 9 18, 17, 16, 15, 14, 13, 12, 11 19 10 20 SYMBOL DIR A1 to A8 B1 to B8 NAME AND FUNCTION Directional Control Data Inputs/Outputs Data Inputs/Outputs G GND VCC Output Enable Input Ground (0V) Positive Supply Voltage Table 3: Truth Table INPUTS G L L H X : Don‘t Care Z : High Impedance FUNCTION OUTPUT DIR L H X A BUS OUTPUT INPUT Z B BUS INPUT OUTPUT Z A=B B=A Z Table 4: Absolute Maximum Ratings Symbol VCC VI VI/O VO IIK IOK IO Supply Voltage DC Input Voltage (DIR, G) Bus I/O Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 75 -65 to +150 300 Unit V V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current Storage Temperature Tstg TL Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied Table 5: Recommended Operating Conditions Symbol VCC VI VI/O VO Top dt/dv Supply Voltage Input Voltage (DIR, G) Bus I/O Voltage Output Voltage Operating Temperature Input Rise and Fall Time (note 1) (VCC = 3.3 ± 0.3V) (VCC = 5.0 ± 0.5V) Parameter Value 2 to 5.5 0 to 5.5 0 to VCC 0 to VCC -55 to 125 0 to 100 0 to 20 Unit V V V V °C ns/V 1) VIN from 30% to 70% of VCC 2/12 74VHC245 Table 6: DC Specifications Test Condition Symbol Parameter VCC (V) 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 IOZ High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current 5.5 0 to 5.5 5.5 IO=-50 µA IO=-50 µA IO=-50 µA IO=-4 mA IO=-8 mA IO=50 µA IO=50 µA IO=50 µA IO=4 mA IO=8 mA VI = VIH or VIL VO = VCC or GND VI = 5.5V or GND VI = VCC or GND TA = 25°C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ±0.25 ± 0.1 4 2.0 3.0 4.5 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 ± 2.5 ±1 40 Typ. Max. Value -40 to 85°C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.4 3.7 0.1 0.1 0.1 0.55 0.55 ± 2.5 ±1 40 µA µA µA V V Max. -55 to 125°C Min. 1.5 0.7VCC 0.5 0.3VCC V V Max. Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL VOH II ICC 3/12 74VHC245 Table 7: AC Electrical Characteristics (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) 3.3(*) 3.3 5.0 tPZL tPZH Output Disable Time (*) (**) Value TA = 25°C Min. Typ. 5.8 8.3 4.0 5.5 Max. 8.4 11.9 5.5 7.5 13.2 16.7 8.5 10.6 15.8 9.7 1.5 1.0 -40 to 85°C Min. 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max. 10.0 13.5 6.5 8.5 15.5 19.0 10.0 12.0 18.0 11.0 1.5 1.0 -55 to 125°C Min. 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max. 10.0 13.5 6.5 8.5 15.5 19.0 10.0 12.0 18.0 11.0 1.5 1.0 ns ns ns ns Unit CL (pF) 15 50 15 50 15 50 15 50 50 50 50 50 RL = 1KΩ RL = 1KΩ RL = 1KΩ RL = 1KΩ RL = 1KΩ RL = 1KΩ tPLH tPHL Propagation Delay Time 5.0(**) 3.3(*) 3.3(*) 5.0(**) 5.0(**) tPLZ tPHZ tOSLH tOSHL Output Enable Time Output to Output Skew time (note 1) 3.3 5.0 (*) (**) 8.5 11.0 5.8 7.3 11.5 7.0 3.3(*) 5.0(**) (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V Note 1: Parameter guaranteed by design. tsoLH = |tpLHm - tpLHn|, tsoHL = |tpHLm - tpHLn| Table 8: Capacitive Characteristics Test Condition Symbol Parameter TA = 25°C Min. CIN CI/O CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) Typ. 4 8 21 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF pF Unit 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit) 4/12 74VHC245 Table 9: Dynamic Switching Characteristics Test Condition Symbol Parameter VCC (V) 5.0 TA = 25°C Min. Typ. 0.6 -0.9 CL = 50 pF 3.5 -0.6 Max. 0.9 V Value -40 to 85°C Min. Max. -55 to 125°C Min. Max. Unit VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 5.0 V 5.0 1.5 V 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. Figure 3: Test Circuit TEST tPLH, tPHL tPZL, tPLZ tPZH, tPHZ CL =15/ 50pF or equivalent (includes jig and probe capacitance) RL = R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) SWITCH Open VCC GND 5/12 74VHC245 Figure 4: Waveform - Propagation Delays (f=1MHz; 50% duty cycle) Figure 5: Waveform - Output Enable And Disable Time (f=1MHz; 50% duty cycle) 6/12 74VHC245 SO-20 MECHANICAL DATA DIM. A A1 B C D E e H h L k ddd 10.00 0.25 0.4 0° mm. MIN. 2.35 0.1 0.33 0.23 12.60 7.4 1.27 10.65 0.75 1.27 8° 0.100 0.394 0.010 0.016 0° TYP MAX. 2.65 0.30 0.51 0.32 13.00 7.6 MIN. 0.093 0.004 0.013 0.009 0.496 0.291 0.050 0.419 0.030 0.050 8° 0.004 inch TYP. MAX. 0.104 0.012 0.020 0.013 0.512 0.299 0016022D 7/12 74VHC245 TSSOP20 MECHANICAL DATA mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0˚ 0.45 0.60 0.05 0.8 0.19 0.09 6.4 6.2 4.3 6.5 6.4 4.4 0.65 BSC 8˚ 0.75 0˚ 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 6.6 6.6 4.48 0.002 0.031 0.007 0.004 0.252 0.244 0.169 0.256 0.252 0.173 0.0256 BSC 8˚ 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0079 0.260 0.260 0.176 inch A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 0087225C 8/12 74VHC245 Tape & Reel SO-20 MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 10.8 13.2 3.1 3.9 11.9 12.8 20.2 60 30.4 11 13.4 3.3 4.1 12.1 0.425 0.520 0.122 0.153 0.468 TYP MAX. 330 13.2 0.504 0.795 2.362 1.197 0.433 0.528 0.130 0.161 0.476 MIN. TYP. MAX. 12.992 0.519 inch 9/12 74VHC245 Tape & Reel TSSOP20 MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 6.8 6.9 1.7 3.9 11.9 12.8 20.2 60 22.4 7 7.1 1.9 4.1 12.1 0.268 0.272 0.067 0.153 0.468 TYP MAX. 330 13.2 0.504 0.795 2.362 0.882 0.276 0.280 0.075 0.161 0.476 MIN. TYP. MAX. 12.992 0.519 inch 10/12 74VHC245 Table 10: Revision History Date 12-Nov-2004 Revision 6 Description of Changes Order Codes Revision - pag. 1. 11/12 74VHC245 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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