BD236

® BD235 BD236 BD237 BD238 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CER V CEO V EBO IC I CM P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Base Voltage (R BE = 1 K Ω ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 C Storage Temperature Max. Operating Junction Temperature o Value BD235 BD236 60 60 60 5 2 6 25 -65 to 150 150 BD237 BD238 100 100 80 Unit V V V V A A W o o C C For PNP types voltage and current values are negative. February 2003 1/5 BD235 BD236 BD237 BD238 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = r ated V CEO V CE = r ated V CEO V EB = 5 V I C = 1 00 mA for B D235 / BD236 for B D237 / BD238 IC = 1 A IC = 1 A I C = 1 50 mA IC = 1 A I C = 2 50 mA I C = 1 50 mA I B = 0 .1 A V CE = 2 V V CE = 2 V V CE = 2 V V CE = 1 0 V V CE = 2 V 40 25 3 1.6 MHz T c = 1 50 o C Min. Typ. Max. 0.1 2 1 Unit mA mA mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE ∗ h FE ∗ fT Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency 60 80 0.6 1 .3 V V V V h FE1 /h FE2 ∗ Matched Pairs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/5 BD235 BD236 BD237 BD238 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Collector-Base Capacitance (PNP type) 3/5 BD235 BD236 BD237 BD238 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10 o DIM. 7.4 10.5 0.7 0.40 2.4 1.0 15.4 inch MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 3.2 2.54 0.084 0.05 0.011 10o 0.118 0.126 0.100 TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 TYP. 2.2 4.4 3.8 3 1: Base 2: Collector 3: Emitter 0016114/B 4/5 BD235 BD236 BD237 BD238 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5