BTW69200

B TW 69 (N) SCR . . . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW 69 Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 69 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle,single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter BTW 69 BTW 69 N BTW 69 BTW 69 N Tc=70°C Tc=75°C Tc=70°C Tc=75°C tp=8.3 ms tp=10 ms tp=10 ms Value 50 55 32 35 525 500 1250 100 - 40 to + 150 - 40 to + 125 230 A2s A/µs °C °C °C Unit A A A K A G TOP 3 (Plastic) I2t dI/dt Tstg Tj Tl Symbol Parameter BTW 69 200 400 400 BTW 69 / BTW 69 N 600 600 800 800 1000 1000 1200 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 200 V March 1995 1/5 BTW 69 (N) THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTW 69 BTW 69 N Parameter Value 50 0.9 0.8 Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IFGM = 8A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value BTW 69 IGT VGT VGD tgt VD =12V VD =12V (DC) R L=33Ω (DC) R L=33Ω Tj=25°C Tj=25°C Tj= 125°C Tj=25°C Tj=25°C gate open tp= 380µs Tj=25°C Tj=25°C Tj=25°C Tj= 125°C VDRM≤ 800V VDRM ≥ 1000V Tj= 125°C MIN MAX MAX MIN TYP 80 1.5 0.2 2 BTW 69 N mA V V µs mA mA 2.0 0.02 6 500 250 100 V/µs V mA Unit VD =VDRM RL=3.3k Ω VD =VDRM IG = 200mA dIG/dt = 1.5A/µs IG= 1.2 IGT IT= 500mA IL IH VTM IDRM IRRM dV/dt TYP MAX MAX MAX 1.9 50 150 BTW 69 ITM= 100A BTW 69 N ITM= 110A VDRM VRRM Rated Rated Linear slope up to VD =67%VDRM gate open tq VD =67%VDRM ITM= 110A VR = 75V dITM/dt=30 A/µs dVD /dt= 20V/ µs Tj= 125°C TYP µs 2/5 BTW 69 (N) Package BTW 69 (Insulated) IT(RMS) A 50 VDRM / VRRM V 200 400 600 800 1000 1200 BTW 69 N (Uninsulated) 55 600 800 1000 1200 Sensitivity Specification BTW X X X X X X X X X X Fig.1 : Maximum average power dissipation versus average on-state current (BTW 69). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (BTW 69). F ig.3 : Maximum average power dissipation versus average on-state current (BTW 69 N). Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (BTW 69 N). 3/5 BTW 69 (N) Fig.5 : Average on-state temperature (BTW 69). current versus case Fig.6 : Average on-state temperature (BTW 69 N). current versus case Fig.7 : Relative variation of thermal impedance versus pulse duration. Fig.8 : Relative variation of gate trigger current versus junction temperature. Zth/Rth 1.00 Zth( j-c) 0.10 Zt h( j-a) 0.01 tp( s) 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E +3 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. 4/5 BTW 69 (N) F ig11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TOP 3 Plastic REF. A R 4.6 I J H DIMENSIONS Millimeters Min. Max. 15.50 21.10 15.60 16.50 4.60 4.17 1.55 0.70 2.90 5.65 1.40 Inches Min. 0.594 0.814 0.561 0.632 0.133 0.173 0.161 0.057 0.019 0.106 0.212 0.047 Max. 0.611 0.831 0.615 0.650 0.182 0.164 0.062 0.028 0.115 0.223 0.056 A B C 15.10 20.70 14.30 16.10 3.40 4.40 4.08 1.45 0.50 2.70 5.40 1.20 G B D D G H I J P L M C L M N P N N Cooling method : C Marking : type number Weight : 4.7 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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