BU941Z

® BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 2 3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter: pin 2 Base: pin1 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BU941Z Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature o Value BU941Z P 350 5 15 30 1 5 180 -65 to 200 200 155 -65 to 175 175 65 -65 to 175 175 BUB941ZPFI Uni t V V A A A A W o o C C January 2000 1/8 BU941Z/BU941ZP/BU941ZPFI THERMAL DATA TO-3 R t hj-ca se Thermal Resistance Junct ion-case Max 0.97 TO-218 0.97 ISOW AT T218 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I EBO V CL ∗ V CE(sat )∗ Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Clamping Voltage Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 300 V V CE = 300 V V EB = 5 V I C = 100 mA IC = 8 A I C = 10 A I C = 12 A IC = 8 A I C = 10 A I C = 12 A IC = 5 A IB = 100 mA IB = 250 mA IB = 300 mA IB = 100 mA IB = 250 mA IB = 300 mA V CE = 10 V 300 2.5 L= 7 mH 10 V A 350 T j = 125 C o Min. Typ . Max. 100 0.5 20 500 1.8 1.8 2 2.2 2.5 2.7 Un it µA mA mA V V V V V V V V BE(s at)∗ h F E∗ VF Diode F orward Voltage I F = 10 A Functional T est (see fig. 1) V CC = 24 V ts tf INDUCTIVE LO AD Storage Time Fall Time (see fig. 3) V CC = 12 V L= 7 mH R BE = 47 Ω V BE = 0 V c la mp = 300 V IC = 7 A I B = 70 mA 15 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area DC Current Gain 2/8 BU941Z/BU941ZP/BU941ZPFI DC Current Gain Collector-emitter Saturation Voltage Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Saturation Voltage Collector-emitter Saturation Voltage 3/8 BU941Z/BU941ZP/BU941ZPFI FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit 4/8 BU941Z/BU941ZP/BU941ZPFI TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V N O R B P003F E 5/8 BU941Z/BU941ZP/BU941ZPFI TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R Ø – 4 3.95 31 12.2 4.1 – 0.157 0.5 1.1 10.8 14.7 – 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 – 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H ¯ F R 1 2 3 P025A 6/8 G BU941Z/BU941ZP/BU941ZPFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP. MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.354 4.6 3.5 3.7 0.138 0.181 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended 0.8 Nm; Maximum: 1 Nm : - The side of the dissipator must be flat within 80 µm P025C/A 7/8 BU941Z/BU941ZP/BU941ZPFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8