STB11NM60-1

STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1




VDSS RDS(on) 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω ID 11 A 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 3 1 2 1 TO-220 TO-220FP 3 3 12 1 2 I2PAK D PAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 2 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)11NM60(-1) VDS VDGR VGS Unit STP11NM60FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 11 11 (*) A ID Drain Current (continuous) at TC = 100°C 7 7 (*) A Drain Current (pulsed) 44 44 (*) A Total Dissipation at TC = 25°C 160 35 W Derating Factor 1.28 0.28 W/°C IDM () PTOT dv/dt(1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area May 2003 15 -- V/ns 2500 V –65 to 150 °C 150 °C (*)Limited only by maximum temperature allowed (1)ISD