STB46N60M6
Datasheet
N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6
Power MOSFET in a D²PAK package
Features
TAB
2
3
1
D²PAK
Order code
VDS
RDS(on) max.
ID
STB46N60M6
600 V
80 mΩ
36 A
•
•
Reduced switching losses
Lower RDS(on) per area vs previous generation
•
•
•
Low gate input resistance
100% avalanche tested
Zener-protected
D(2, TAB)
Applications
•
•
•
G(1)
S(3)
AM01475V1
Switching applications
LLC converters
Boost PFC converters
Description
The new MDmesh M6 technology incorporates the most recent advancements to the
well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics
builds on the previous generation of MDmesh devices through its new M6
technology, which combines excellent RDS(on) per area improvement with one of the
most effective switching behaviors available, as well as a user-friendly experience for
maximum end-application efficiency.
Product status link
STB46N60M6
Product summary
Order code
STB46N60M6
Marking
46N60M6
Package
D²PAK
Packing
Tape and reel
DS12965 - Rev 2 - November 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STB46N60M6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at Tcase = 25 °C
36
Drain current (continuous) at Tcase = 100 °C
23
ID(1)
Drain current (pulsed)
126
A
PTOT
Total power dissipation at Tcase = 25 °C
250
W
dv/dt (2)
Peak diode recovery voltage slope
15
dv/dt(3)
MOSFET dv/dt ruggedness
100
Tstg
Storage temperature range
VGS
ID
Tj
Parameter
Operating junction temperature range
A
V/ns
-55 to 150
°C
Value
Unit
1. Pulse width limited by safe operating area.
2. ISD ≤ 36 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
0.5
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb
30
°C/W
Value
Unit
5.2
A
760
mJ
1. When mounted on 1 a inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
IAR
EAS
DS12965 - Rev 2
Parameter
Avalanche current, repetitive or non-repetitive
(pulse width limited by TJmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
page 2/19
STB46N60M6
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
600
Zero gate voltage drain current
IGSS
1
VGS = 0 V, VDS = 600 V,
Tcase = 125
100
°C(1)
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 18 A
Unit
V
VGS = 0 V, VDS = 600 V
IDSS
Max.
µA
±5
µA
4
4.75
V
68
80
mΩ
Min.
Typ.
Max.
Unit
-
2340
-
-
147
-
-
3.7
-
3.25
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Test conditions
VDS = 100 V, f = 1 MHz, VGS = 0 V
Reverse transfer capacitance
(1)
pF
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
339
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
1.6
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 36 A,
-
53.5
-
Qgs
Gate-source charge
VGS = 0 to 10 V
-
15.5
-
Gate-drain charge
(see Figure 14. Test circuit for gate
charge behavior)
-
23.5
-
Coss eq.
Qgd
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS12965 - Rev 2
Parameter
Test conditions
Min.
Typ.
Max.
Turn-on delay time
VDD = 300 V, ID = 18 A,
-
20
-
Rise time
RG = 4.7 Ω, VGS = 10 V
-
15.5
-
Turn-off delay time
(see Figure 13. Test circuit for
resistive load switching times and
Figure 18. Switching time
waveform)
-
48.4
-
-
8.5
-
Fall time
Unit
ns
page 3/19
STB46N60M6
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
36
A
ISDM (1)
Source-drain current (pulsed)
-
126
A
VSD (2)
Forward on voltage
ISD = 36 A, VGS = 0 V
-
1.6
V
trr
Reverse recovery time
ISD = 36 A, di/dt = 100 A/µs,
-
267
ns
Qrr
Reverse recovery charge
VDD = 60 V
-
2.8
µC
Reverse recovery current
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
-
20.8
A
-
440
ns
-
5.8
µC
-
26.4
A
IRRM
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 36 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DS12965 - Rev 2
page 4/19
STB46N60M6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2. Maximum transient thermal impedance
Figure 1. Safe operating area
ID
(A)
Zthj-c
(°C/W)
GADG211120191204SOA
IDM
0.3
0.4
duty = 0.5
10 2
tp =1µs
ar
D
tp =1ms
10 0
10 1
ID
(A)
VDS (V)
10 2
10 -2
Single pulse
VGS = 9, 10 V
10 -3
10 -6
VGS = 8 V
10 -4
10 -3
10 -2
10 -1
tp (s)
Figure 4. Typical transfer characteristics
GADG280120191025TCH
VDS = 16 V
100
80
60
VGS = 7 V
60
40
40
20
VGS = 6 V
3
6
9
12
15
18
VDS (V)
Figure 5. Typical gate charge characteristics
20
0
4
RDS(on)
(mΩ)
12
74
10
72
8
70
300
6
68
200
4
66
100
2
64
GADG280120191025QVG VGS
VDD = 480 V
ID = 36 A
600
Qg
500
VDS
Qgd
Qgs
10
20
30
40
50
60
0
Qg (nC)
5
6
7
8
9
VGS (V)
Figure 6. Typical drain-source on-resistance
(V)
VDS
(V)
0
0
10 -5
120
80
400
RthJ-C = 0.5°C/W
ID
(A)
GADG280120191024OCH
100
0
0
0.5
V(BR)DSS
Figure 3. Typical output characteristics
120
0.1
tp =10ms
Single pulse, TC =25°C
TJ ≤150°C, VGS =10V
10 -1
10 -1
0.2
tp =100µs
RDS(on) max.
10 0
10 -1
on
)
ea
tp =10µs
S(
O
is per
lim at
ite ion
d in
by th
R is
10 1
DS12965 - Rev 2
GADG211120191320ZTH
62
0
GADG280120191022RID
VGS =10 V
6
12
18
24
30
36
ID (A)
page 5/19
STB46N60M6
Electrical characteristics (curves)
Figure 7. Typical capacitance characteristics
C
(pF)
Figure 8. Normalized gate threshold vs temperature
VGS(th)
(norm.)
GADG280120191024CVR
GADG191220180856VTH
1.1
10 4
CISS
1.0
10 3
0.9
10
2
COSS
f = 1 MHz
10 1
10 0
10 -1
10 0
CRSS
10 1
VDS (V)
10 2
Figure 9. Normalized on-resistance vs temperature
RDS(on)
(norm.)
GADG191220180856RON
0.8
0.7
0.6
-75
2.0
1.05
0.95
0.5
0.90
-25
25
75
125
Tj (°C)
Figure 11. Typical output capacitance stored energy
EOSS
(µJ)
Tj (°C)
GADG191220180856BDV
ID = 1 mA
0.85
-75
-25
25
75
125
Tj (°C)
Figure 12. Typical reverse diode forward characteristics
VSD
(V)
GADG280120191023SDF
1.1
15
Tj = -50 °C
1.0
12
Tj = 25 °C
0.9
9
0.8
6
Tj = 150 °C
0.7
3
DS12965 - Rev 2
125
GIPD280120191305EOS
18
0
0
75
1.00
1.0
0.0
-75
25
V(BR)DSS
(norm.)
1.10
VGS = 10 V
-25
Figure 10. Normalized breakdown voltage vs temperature
2.5
1.5
ID = 250 µA
0.6
100
200
300
400
500
600
VDS (V)
0.5
0
6
12
18
24
30
36
ISD (A)
page 6/19
STB46N60M6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
RL
RL
2200
+ μF
3.3
μF
VDD
VD
IG= CONST
VGS
+
pulse width
RG
VGS
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
VD
100 µH
fast
diode
B
B
B
3.3
µF
D
G
+
Figure 16. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
toff
td(off)
tr
tf
VD
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS12965 - Rev 2
page 7/19
STB46N60M6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS12965 - Rev 2
page 8/19
STB46N60M6
D²PAK (TO-263) type A2 package information
4.1
D²PAK (TO-263) type A2 package information
Figure 19. D²PAK (TO-263) type A2 package outline
0079457_A2_26
DS12965 - Rev 2
page 9/19
STB46N60M6
D²PAK (TO-263) type A2 package information
Table 8. D²PAK (TO-263) type A2 package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.70
8.90
9.10
E2
7.30
7.50
7.70
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS12965 - Rev 2
Typ.
0.40
0°
8°
page 10/19
STB46N60M6
D²PAK packing information
4.2
D²PAK packing information
Figure 20. D²PAK tape outline
DS12965 - Rev 2
page 11/19
STB46N60M6
D²PAK packing information
Figure 21. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 9. D²PAK tape and reel mechanical data
Tape
Dim.
DS12965 - Rev 2
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 12/19
STB46N60M6
D²PAK (TO-263) type B package information
4.3
D²PAK (TO-263) type B package information
Figure 22. D²PAK (TO-263) type B package outline
0079457_26_B
DS12965 - Rev 2
page 13/19
STB46N60M6
D²PAK (TO-263) type B package information
Table 10. D²PAK (TO-263) type B mechanical data
Dim.
mm
Min.
Max.
A
4.36
4.56
A1
0
0.25
b
0.70
0.90
b1
0.51
0.89
b2
1.17
1.37
c
0.38
0.694
c1
0.38
0.534
c2
1.19
1.34
D
8.60
9.00
D1
6.90
7.50
E
10.15
10.55
E1
8.10
8.70
e
2.54 BSC
H
15.00
15.60
L
1.90
2.50
L1
1.65
L2
1.78
L3
L4
DS12965 - Rev 2
Typ.
0.25
4.78
5.28
page 14/19
STB46N60M6
D²PAK type B packing information
Figure 23. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint_26
4.4
D²PAK type B packing information
Figure 24. D²PAK type B tape outline
DS12965 - Rev 2
page 15/19
STB46N60M6
D²PAK type B packing information
Figure 25. D²PAK type B reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
Full radius
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
AM06038v1
Table 11. D²PAK type B reel mechanical data
Dim.
mm
Min.
A
DS12965 - Rev 2
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
Max.
13.2
26.4
30.4
page 16/19
STB46N60M6
Revision history
Table 12. Document revision history
Date
Version
Changes
20-Mar-2019
1
First release.
25-Nov-2019
2
Updated Table 3. Avalanche characteristics, Section 2 Electrical
characteristics and Section 2.1 Electrical characteristics (curves).
Minor text changes.
DS12965 - Rev 2
page 17/19
STB46N60M6
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3
D²PAK (TO-263) type B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.4
D²PAK type B packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
DS12965 - Rev 2
page 18/19
STB46N60M6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS12965 - Rev 2
page 19/19