STB46N30M5

STB46N30M5 Automotive-grade N-channel 300 V, 53 A, 0.037 Ω typ., MDmesh™ V Power MOSFET in a D2PAK package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STB46N30M5 300 V 0.04 Ω 53 A • Designed for automotive applications and AEC-Q101 qualified 3 • Amongst the best RDS(on) * area 1 2 • High dv/dt capability D PAK • Excellent switching performance • Easy to drive • 100% avalanche tested Figure 1. Internal schematic diagram Applications • Switching applications '7$% Description * 6 $0Y This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Packages Packaging STB46N30M5 46N30M5 D2PAK Tape and reel April 2014 This is information on a product in full production. DocID026126 Rev 2 1/17 www.st.com Contents STB46N30M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 DocID026126 Rev 2 STB46N30M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 53 A ID Drain current (continuous) at TC = 100 °C 34 A IDM (1) Drain current (pulsed) 212 A PTOT Total dissipation at TC = 25 °C 250 W Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C Value Unit dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 53 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD=240 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max 30 °C/W Value Unit 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Thermal data Symbol Parameter IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 16 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 550 mJ DocID026126 Rev 2 3/17 17 Electrical characteristics 2 STB46N30M5 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 5. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA IDSS VDS = 300 V Zero gate voltage drain current (VGS = 0) VDS = 300 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. 300 Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit V 1 µA 100 µA ±100 nA 4 5 V 0.037 0.04 Ω Min. Typ. Max. Unit - 4240 - pF - 205 - pF - 9.5 - pF - 373 - pF - 202 - pF - 1.4 - Ω - 95 - nC - 23 - nC - 37 - nC VGS = ± 25 V VGS(th) Max. 3 VGS = 10 V, ID = 26.5 A Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr) (1) Equivalent capacitance time related Co(er) (2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 240 V, VGS = 0 Rg Gate input resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, ID = 0 VDD = 240 V, ID = 24 A, VGS = 10 V (see Figure 16) 1. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 2. Co(er) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/17 DocID026126 Rev 2 STB46N30M5 Electrical characteristics Table 7. Switching times Symbol td(v) Parameter Voltage delay time tr(v) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 240 V, ID = 32 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Crossing time Min. Typ. Max Unit - 66 - ns - 15 - ns - 24 - ns - 22.5 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 53 A ISDM (1) Source-drain current (pulsed) - 212 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 53 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 48 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) ISD = 48 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) - 223 ns - 2.5 μC - 23 A - 280 ns - 3.9 μC - 28 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026126 Rev 2 5/17 17 Electrical characteristics 2.1 STB46N30M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM18133v1 ID (A) 100 in i th s ar ax ea R D is S( on ) 10µs 100µs 1ms n m tio by ra pe ited O im L 10 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM18134v1 ID (A) VGS=10V 140 9V 8V 120 VDS=25V 120 100 100 80 80 7V 60 AM18135v1 ID (A) 140 60 40 40 20 20 6V 0 0 0 10 5 20 15 VDS(V) Figure 6. Gate charge vs gate-source voltage AM18136v1 VGS (V) 12 VDD=240V ID=24A VDS 10 4 3 5 7 6 8 9 VGS(V) Figure 7. Static drain-source on-resistance VDS (V) RDS(on) (Ω) 250 0.04 200 0.038 150 0.036 100 0.034 50 0.032 0 Qg(nC) 0.03 AM18137v1 VGS=10V 8 6 4 2 0 0 6/17 20 40 60 80 100 DocID026126 Rev 2 0 10 20 30 40 50 ID(A) STB46N30M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM18138v1 C (pF) AM18139v1 Eoss (µJ) 10 10000 Ciss 8 1000 6 Coss 100 4 Crss 10 1 0.1 1 100 10 0 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature $0Y 9*6WK 2 QRUP 0 200 250 300 100 150 VDS(V) Figure 11. Normalized on-resistance vs temperature $0Y 5'6RQ QRUP  ,' —$            7-ƒ& Figure 12. Normalized V(BR)DSS vs temperature AM10399v1 V(BR)DSS ,' $ 9*6 9     50 (norm) 1.08         7-ƒ& Figure 13. Source-drain diode forward characteristics $0Y 96' 9 7- ƒ&  ID = 1mA 1.06 7- ƒ&  1.04 1.02  1.00  0.98 7- ƒ&  0.96  0.94 0.92 -50 -25  0 25 50 75 100 TJ(°C) DocID026126 Rev 2       ,6'$ 7/17 17 Electrical characteristics STB46N30M5 Figure 14. Switching losses vs gate resistance (1) AM18140v1 E (µJ) 1000 Eon VDD=240V VGS=10V ID=32A 800 600 Eoff 400 200 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/17 DocID026126 Rev 2 STB46N30M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS Figure 20. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 DocID026126 Rev 2 Tfall Tcross --over AM05540v1 9/17 17 Package mechanical data 4 STB46N30M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/17 DocID026126 Rev 2 STB46N30M5 Package mechanical data Figure 21. D²PAK (TO-263) drawing 0079457_T DocID026126 Rev 2 11/17 17 Package mechanical data STB46N30M5 Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/17 Max. 0.4 0° 8° DocID026126 Rev 2 STB46N30M5 Package mechanical data Figure 22. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID026126 Rev 2 13/17 17 Packaging mechanical data 5 STB46N30M5 Packaging mechanical data Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 14/17 DocID026126 Rev 2 STB46N30M5 Packaging mechanical data Figure 24. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID026126 Rev 2 Min. Max. 330 13.2 26.4 30.4 15/17 17 Revision history 6 STB46N30M5 Revision history Table 11. Document revision history 16/17 Date Revision Changes 24-Mar-2014 1 Initial release. 11-Apr-2014 2 – Document status promoted from preliminary data to production data – Minor text changes DocID026126 Rev 2 STB46N30M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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