STB30N65M5

STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, STW30N65M5 N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS @ TJMAX RDS(on) max. 710 V 710 V 710 V 710 V 710 V < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5 ID 3 1 22 A 22 A(1) 22 A 22 A 22 A D²PAK TO-220FP 1. Limited only by maximum temperature allowed Worldwide best RDS(on)*area ■ Higher VDSS rating ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested ■ High dv/dt capability 2 I²PAK 3 1 ■ 3 12 3 1 2 2 TO-220 Figure 1. 3 1 TO-247 Internal schematic diagram $ Applications ■ Switching applications ' Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary 3 !-V Order codes Marking Package Packaging STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5 30N65M5 30N65M5 30N65M5 30N65M5 30N65M5 D²PAK TO-220FP I²PAK TO-220 TO-247 Tape and reel Tube Tube Tube Tube September 2011 Doc ID 15331 Rev 3 1/22 www.st.com 22 Contents STB/F/I/P/W30N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 .............................................. 9 Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID Parameter Unit TO-220, D²PAK TO-247, I²PAK Gate-source voltage TO-220FP ± 25 Drain current (continuous) at TC = 25 °C 22 V 22 (1) A (1) A Drain current (continuous) at TC = 100 °C 13 13 IDM (2) Drain current (pulsed) 88 88 (1) A PTOT Total dissipation at TC = 25 °C 140 30 W ID IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) EAS dv/dt (3) 7 A Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 500 mJ Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt = 400 A/µs, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit D²PAK TO-220FP I²PAK TO-220 TO-247 Rthj-case Thermal resistance junctioncase max Rthj-amb Thermal resistance junctionambient max Rthj-pcb Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purpose 0.83 3.6 0.83 62.5 50 30 Doc ID 15331 Rev 3 °C/W °C/W °C/W 300 °C 3/22 Electrical characteristics 2 STB/F/I/P/W30N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 650 V IDSS VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.125 0.139 Ω Min. Typ. Max. Unit - pF pF pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 11 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 2880 68 5 Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 190 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 65 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.6 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 11 A, VGS = 10 V (see Figure 20) - 64 16 25 - nC nC nC Ciss Coss Crss 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/22 Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 Table 6. Symbol td(off) tr tc tf Table 7. Electrical characteristics Switching times Parameter Test conditions Turn-off delay time Rise time Cross time Fall time VDD = 400 V, ID = 14 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 50 8 20 10 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 22 88 A A ISD = 22 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21) - 336 6 32 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21) - 395 7 34 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15331 Rev 3 5/22 Electrical characteristics STB/F/I/P/W30N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Figure 3. Thermal impedance for TO-220, D²PAK, I²PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 AM05462v1 ai s (o DS Op Lim erat ite ion d b in y m this ax ar R e n) ID (A) 10 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 Figure 4. 10 1 100 Safe operating area for TO-220FP AM05463v1 ID (A) 10 VDS(V) is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L s hi 10µs 100µs 1 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for TO-247 AM05464v1 1 n) (o DS 10 Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 10µs 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Sinlge pulse 0.01 0.1 6/22 1 10 100 VDS(V) Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 Figure 8. Electrical characteristics Output characteristics Figure 9. AM05465v1 ID (A) VGS=10V 45 7V 40 Transfer characteristics AM05466v1 ID (A) 45 VDS=15V 40 35 35 30 30 25 25 20 20 6V 15 15 10 10 5 5 0 0 5V 5 10 20 15 25 0 0 30 VDS(V) 2 4 8 6 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM05471v1 VGS (V) VDS VGS VDD=520V 12 480 0.14 10 400 0.13 8 320 0.12 6 240 0.11 4 160 0.10 2 80 0.09 ID=11A 0 0 10 20 30 40 50 60 0 70 Qg(nC) Figure 12. Capacitance variations 0.08 0 5 10 15 20 25 ID(A) Figure 13. Output capacitance stored energy AM05469v1 C (pF) AM05468v1 RDS(on) (Ω) AM05470v1 Eoss (µJ) 12 10000 Ciss 1000 10 8 6 100 Coss 4 10 Crss 1 0.1 1 10 100 VDS(V) Doc ID 15331 Rev 3 2 0 0 100 200 300 400 500 600 VDS(V) 7/22 Electrical characteristics STB/F/I/P/W30N65M5 Figure 14. Normalized gate threshold voltage vs temperature AM05473v1 VGS(th) (norm) 1.10 Figure 15. Normalized on resistance vs temperature AM05474v1 RDS(on) (norm) 2.1 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 TJ(°C) 75 100 Figure 16. Source-drain diode forward characteristics 0 25 50 75 100 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM05475v1 VSD (V) 0.5 -50 -25 TJ=-50°C 1.2 AM05467v1 BVDSS (norm) 1.07 1.05 1.0 1.03 0.8 1.01 TJ=25°C 0.6 0.99 TJ=150°C 0.4 0.97 0.2 0.95 0 0 10 30 20 40 50 ISD(A) 0.93 -50 -25 Figure 18. Switching losses vs gate resistance (1) E (μJ) 300 AM05472v1 Eon ID=14A VCL=400V VGS=10V 250 Eoff 200 150 100 50 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/22 Doc ID 15331 Rev 3 0 25 50 75 100 125 TJ(°C) STB/F/I/P/W30N65M5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 24. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 15331 Rev 3 Tfall Tcross --over AM05540v2 9/22 Package mechanical data 4 STB/F/I/P/W30N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACKm is an ST trademark. 10/22 Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 Table 8. Package mechanical data D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 15331 Rev 3 11/22 Package mechanical data STB/F/I/P/W30N65M5 Figure 25. D²PAK (TO-263) drawing 0079457_S Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters 12/22 Doc ID 15331 Rev 3 Footprint STB/F/I/P/W30N65M5 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 27. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15331 Rev 3 13/22 Package mechanical data Table 10. STB/F/I/P/W30N65M5 I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 28. I²PAK (TO-262) drawing 0004982_Rev_H 14/22 Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15331 Rev 3 15/22 Package mechanical data STB/F/I/P/W30N65M5 Figure 29. TO-220 type A drawing 0015988_typeA_Rev_S 16/22 Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 Table 12. Package mechanical data TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 15331 Rev 3 17/22 Package mechanical data STB/F/I/P/W30N65M5 Figure 30. TO-247 drawing 0075325_F 18/22 Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 5 Packaging mechanical data Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 15331 Rev 3 Min. Max. 330 13.2 26.4 30.4 19/22 Packaging mechanical data STB/F/I/P/W30N65M5 Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 Doc ID 15331 Rev 3 STB/F/I/P/W30N65M5 6 Revision history Revision history Table 14. Document revision history Date Revision 16-Jan-2009 1 First release 21-Sep-2009 2 Document status promoted from preliminary data to datasheet. 3 Co(er) and Co(tr) values changed in Table 5: Dynamic Table 6: Switching times parameters updates Figure 24: Switching time waveform has been corrected Minor text changes Section 4: Package mechanical data has been modified. Added: – Table 8: D²PAK (TO-263) mechanical data, Figure 25: D²PAK (TO263) drawing and Figure 26: D²PAK footprint; – Table 9: TO-220FP mechanical data,and Figure 27: TO-220FP drawing; – Table 10: I²PAK (TO-262) mechanical data,and Figure 28: I²PAK (TO-262) drawing; – Table 11: TO-220 type A mechanical data,and Figure 29: TO-220 type A drawing; – Table 12: TO-247 mechanical data,and Figure 30: TO-247 drawing; Section 5: Packaging mechanical data has been modified. Added: – Table 13: D²PAK (TO-263) tape and reel mechanical data, Figure 31: Tape and Figure 32: Reel; 22-Sep-2011 Changes Doc ID 15331 Rev 3 21/22 STB/F/I/P/W30N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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