STB10N65K3

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes 3 1 1 RDS(on) max ID PTOT STB10N65K3 3 D2PAK VDS 2 STF10N65K3 TO-220FP STFI10N65K3 TAB 150 W 650 V 1Ω 10 A STP10N65K3 35 W 150 W • 100% avalanche tested • Extremely low on-resistance RDS(on) 3 1 I2PAKFP (TO-281) 2 • Gate charge minimized TO-220 • Very low intrinsic capacitances Figure 1. Internal schematic diagram '7$% • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications * Description 6 AM01476v1 These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking STB10N65K3 STF10N65K3 This is information on a product in full production. D2PAK Tape and reel I2 PAKFP (TO-281) STP10N65K3 August 2013 Packaging TO-220FP 10N65K3 STFI10N65K3 Package Tube TO-220 DocID15732 Rev 4 1/21 www.st.com Contents STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 DocID15732 Rev 4 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D2PAK, TO-220 TO-220FP I2PAKFP Unit VDS Drain source voltage 650 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 10 A ID Drain current (continuous) at TC = 100 °C 6.3 A IDM (1) Drain current (pulsed) 40 A PTOT Total dissipation at TC = 25 °C 35 150 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 7.2 A EAS Single pulse avalanche energy (2) 212 mJ Derating factor dv/dt (3) 0.28 1.2 W/°C Peak diode recovery voltage slope 12 V/ns ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2.8 kV VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Tj Tstg 2500 V Operating junction temperature °C -55 to 150 Storage temperature °C 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 3. ISD ≤ 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max D2PAK 0.83 Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max DocID15732 Rev 4 TO-220FP I2PAKFP 3.57 0.83 62.5 30 Unit TO-220 °C/W °C/W °C/W 3/21 21 Electrical characteristics 2 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. 650 Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source onVGS = 10 V, ID = 3.6 A resistance Unit V 1 µA 50 µA ±10 µA 4.5 V 0.75 1 Ω Min. Typ. Max. Unit - 1180 - pF - 125 - pF - 14 - pF VGS = ± 20 V VGS(th) Max. 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 77 - pF RG Intrinsic gate resistance f=1 MHz, ID=0 - 3 - Ω Qg Total gate charge - 42 - nC Qgs Gate-source charge - 7.4 - nC Qgd Gate-drain charge VDD = 520 V, ID = 7.2 A, VGS = 10 V (see Figure 18) - 23 - nC VDS = 25 V, f = 1 MHz, VGS = 0 Table 6. Switching times Symbol td(on) tr td(off) tf 4/21 Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time VDD = 310 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Fall time DocID15732 Rev 4 Min. Typ. Max Unit - 14.5 - ns - 14 - ns - 44 - ns - 35 - ns STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Source-drain current Typ. - ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage trr Min. ISD = 7 A, VGS = 0 - Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Max. Unit 7.2 A 28.8 A 1.5 V - 320 ns - 2 µC - 13 A - 410 ns - 2.9 µC - 14 A Min Typ. Max. Unit 30 - - V ISD = 7 A, di/dt = 100A/µs VDD = 60 V (see Figure 22) ISD = 7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID15732 Rev 4 5/21 21 Electrical characteristics 2.1 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and TO-220 Figure 3. Thermal impedance for D2PAK and TO-220 AM15460v1 ID (A) 1µs 10 ai DS (o Op Lim era ite tion d b in y m this ax ar R e n) s 10µs 10µs 1 1ms Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP and Figure 5. Thermal impedance for TO-220FP and I2PAKFP I2PAKFP AM03922v1 ID (A) 10 ) on D S( O Li per m at ite io d ni by n m this ax a R rea is 10µs 1 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 0.01 0.1 Sinlge pulse 10 1 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM03923v1 ID (A) 18 16 14 7V VGS=10V 12 10 8 6V 6 4 2 0 0 6/21 5V 10 20 AM03924v1 ID (A) VDS(V) DocID15732 Rev 4 12 11 10 9 8 7 6 5 4 3 2 1 0 1 VDS = 15 V 2 3 4 5 6 7 8 9 VGS(V) STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Figure 8. Normalized BVDSS vs temperature AM03925v1 BVDSS (norm) Electrical characteristics Figure 9. Static drain-source on resistance AM03926v1 RDS(on) (Ω) 0.95 VGS= 10 V 1.10 0.90 ID= 1 mA 0.85 1.05 0.80 1.00 0.75 0.70 0.95 0.65 0.90 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 10. Output capacitance stored energy AM03929v1 Eoss (µJ) 8 0.60 0 1 2 3 4 5 6 7 ID(A) Figure 11. Capacitance variations AM03928v1 C (pF) 1000 Ciss 7 6 100 5 Coss 4 3 Crss 10 2 1 0 0 100 200 300 400 500 Figure 12. Gate charge vs gate-source voltage AM03927v1 VGS (V) 12 1 0.1 600 VDS(V) 1 10 100 VDS(V) Figure 13. Normalized on-resistance vs temperature AM03931v1 RDS(on) (norm) VDD=520V VDS (V) ID=7A 500 2.5 400 2.0 300 1.5 200 1.0 100 0.5 ID= 1.2 A 10 8 6 4 2 0 0 10 20 30 40 0 50 Qg(nC) DocID15732 Rev 4 0.0 -50 -25 0 25 50 75 100 125 150 TJ(°C) 7/21 21 Electrical characteristics STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Figure 14. Normalized gate threshold voltage vs temperature AM03930v1 VGS(th) (norm) 1.10 Figure 15. Maximum avalanche energy vs temperature 200 180 1.00 160 140 0.90 120 100 80 0.80 60 40 0.70 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 16. Source-drain diode forward characteristics AM03932v1 VSD (V) TJ=-50°C 0.9 0.8 TJ=25°C 0.7 TJ=150°C 0.6 0.5 0.4 8/21 ID=7.2 A VDD=50 V 220 ID= 100 µA 0.3 0 AM03933v1 EAS (mJ) 1 2 3 4 5 6 7 8 ISD(A) DocID15732 Rev 4 20 0 0 20 40 60 80 100 120 140 TJ(°C) STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID15732 Rev 4 10% AM01473v1 9/21 21 Package mechanical data 4 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 DocID15732 Rev 4 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Package mechanical data Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID15732 Rev 4 11/21 21 Package mechanical data STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 12/21 DocID15732 Rev 4 Footprint STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Package mechanical data Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID15732 Rev 4 13/21 21 Package mechanical data STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Figure 25. TO-220FP drawing 7012510_Rev_K_B 14/21 DocID15732 Rev 4 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Package mechanical data Table 11. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 26. I2PAKFP (TO-281) drawing UHY$ DocID15732 Rev 4 15/21 21 Package mechanical data STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Table 12. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID15732 Rev 4 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Package mechanical data Figure 27. TO-220 type A drawing BW\SH$B5HYB7 DocID15732 Rev 4 17/21 21 Packaging mechanical data 5 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/21 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID15732 Rev 4 Min. Max. 330 13.2 26.4 30.4 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Packaging mechanical data Figure 28. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 29. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID15732 Rev 4 19/21 21 Revision history 6 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Revision history Table 14. Document revision history Date Revision 30-Jun-2009 1 First release 14-Nov-2011 2 Updated mechanical data and Section 2.1: Electrical characteristics (curves). Minor text changes. 3 – – – – – 4 Added: D2PAK package Added: Rthj-pcb in Table 3 Updated: figure Figure 17, 18, 19 and 20 Updated: Section 4: Package mechanical data and Section 5: Packaging mechanical data – Minor text changes 14-Nov-2012 05-Aug-2013 20/21 Changes Added: I2PAKFP and TO-220 Deleted: TI row Added: RDS(on) typical value, Figure 2 and 3 Modified: Figure 2 Updated: Section 4: Package mechanical data – – – – DocID15732 Rev 4 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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