STB38N65M5

STB38N65M5, STP38N65M5, STW38N65M5 N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB 2 Order codes 3 1 D2PAK VDS @ TJmax RDS(on) max ID 710 V 0.095 Ω 30 A STB38N65M5 STP38N65M5 TAB STW38N65M5 • Higher VDSS rating and high dv/dt capability 3 1 3 2 2 TO-220 • Excellent switching performance • 100% avalanche tested 1 TO-247 Figure 1. Internal schematic diagram Applications • Switching applications 'Ć7$% Description * 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging D2PAK Tape and reel STB38N65M5 STP38N65M5 38N65M5 TO-220 Tube STW38N65M5 April 2014 This is information on a product in full production. TO-247 DocID022851 Rev 4 1/21 www.st.com 21 Contents STB38N65M5, STP38N65M5, STW38N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK, STB38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220, STP38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 TO-247, STW38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 30 A ID Drain current (continuous) at TC = 100 °C 19 A IDM (1) Drain current (pulsed) 120 A PTOT Total dissipation at TC = 25 °C 190 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C 150 °C dv/dt (2) dv/dt (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 30 A, di/dt ≤ 400 A/μs; VPeak < V(BR)DSS, VDD = 400 V 3. VDS ≤ 520 V Table 3. Thermal data Value Symbol Rthj-case Parameter D2PAK Thermal resistance junction-case max max(1) Rthj-pcb Thermal resistance junction-pcb Rthj-amb Thermal resistance junction-ambient max Unit TO-220 TO-247 0.66 °C/W 30 °C/W 62.5 50 °C/W 1. 1.When mounted on 1inch² FR-4 board, 2 oz Cu. Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 8 A EAS Single pulse avalanche energy (starting tj = 25°C, Id= IAR; Vdd= 50V) 660 mJ DocID022851 Rev 4 3/21 Electrical characteristics 2 STB38N65M5, STP38N65M5, STW38N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Unit 650 V VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 1 μA 100 μA ± 100 nA 4 5 V 0.073 0.095 Ω Min. Typ. Max. Unit - 3000 - pF - 74 - pF - 5.8 - pF - 244 - pF - 70 - pF f = 1 MHz open drain - 2.4 - Ω VDD = 520 V, ID = 15 A, VGS = 10 V (see Figure 18) - 71 - nC - 18 - nC - 30 - nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance 3 VGS = 10 V, ID = 15 A Table 6. Dynamic Symbol Ciss Parameter Test conditions Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/21 DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 Electrical characteristics Table 7. Switching times Symbol td (v) Parameter Voltage delay time tr (v) Voltage rise time tf (i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Crossing time Min. Typ. Max. Unit - 66 - ns - 9 - ns - 9 - ns - 13 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 30 A ISDM (1) Source-drain current (pulsed) - 120 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 30 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 30 A, di/dt = 100 A/μs VDD = 100 V (see Figure 22) ISD = 30 A, di/dt = 100 A/μs VDD = 100 V, Tj = 150 °C (see Figure 22) - 382 ns - 6.6 μC - 35 A - 522 ns - 10.3 μC - 40 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID022851 Rev 4 5/21 Electrical characteristics 2.1 STB38N65M5, STP38N65M5, STW38N65M5 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK and TO-220 Figure 3. Thermal impedance for D²PAK and TO-220 AM12634v1 ID (A) 100 is ea n) ar DS(o th x R in ma n it o by ra d pe ite O Lim is 10 10µs 100µs 1ms Tj=150°C Tc=25°C 1 0.1 0.1 10ms Sinlge pulse 10 1 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 AM12636v1 ID (A) 100 is ea n) ar DS(o R t x in ma n io by t ra d pe ite O Lim s hi 10 10µs 100µs 1ms Tj=150°C Tc=25°C 1 10ms Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics GIPG040420141156SA ID (A) 80 VGS = 9, 10 V Figure 7. Transfer characteristics GIPG040420141218SA ID (A) 80 VDS= 25V VGS = 8 V 60 VGS = 7 V 40 40 20 0 0 6/21 60 VGS = 6 V 20 0 5 10 15 20 VDS(V) DocID022851 Rev 4 3 4 5 6 7 8 VGS(V) STB38N65M5, STP38N65M5, STW38N65M5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM12639v1 VDS VGS (V) VDD=520V (V) ID=15A 500 VDS 12 Figure 9. Static drain-source on-resistance AM12640v1 RDS(on) (Ω) 0.088 VGS=10V 0.076 400 300 8 0.074 0.072 0.070 200 0.068 4 100 0 0 20 40 60 0 Qg(nC) 80 Figure 10. Capacitance variations 0.064 0 5 10 15 20 25 ID(A) Figure 11. Output capacitance stored energy AM12641v1 C (pF) 0.066 AM12642v1 Eoss (µJ) 14 10000 12 Ciss 1000 10 8 100 6 Coss 4 10 2 Crss 1 0.1 1 10 100 Figure 12. Normalized gate threshold voltage vs temperature AM05459v1 VGS(th) (norm) 1.10 0 0 VDS(V) ID = 250 µA 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature RDS(on) (norm) 2.1 AM05460v1 VGS = 10 V ID = 15 A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID022851 Rev 4 0 25 50 75 100 TJ(°C) 7/21 Electrical characteristics STB38N65M5, STP38N65M5, STW38N65M5 Figure 14. Source-drain diode forward characteristics AM05461v1 VSD (V) Figure 15. Normalized V(BR)DSS vs temperature AM10399v1 V(BR)DSS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs gate resistance (1) E (μJ) 600 500 AM12643v1 Eon ID=20A VDD=400V L=50µH 400 300 Eoff 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. 8/21 DocID022851 Rev 4 0 25 50 75 100 TJ(°C) STB38N65M5, STP38N65M5, STW38N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform Inductive Load Turn - off 9%5'66 Id 9' 90%Vds 90%Id td(v) ,'0 Vgs 90%Vgs on ,' )) Vgs(I(t)) 9'' 9'' 10%Id 10%Vds Vds tr(v) $0Y DocID022851 Rev 4 tf(i) tc(off) AM05540v1 9/21 Package mechanical data 4 STB38N65M5, STP38N65M5, STW38N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 4.1 Package mechanical data D2PAK, STB38N65M5 Figure 23. D²PAK (TO-263) drawing 0079457_T DocID022851 Rev 4 11/21 Package mechanical data STB38N65M5, STP38N65M5, STW38N65M5 Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/21 Typ. 0.4 0° 8° DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 Package mechanical data Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID022851 Rev 4 13/21 Package mechanical data 4.2 STB38N65M5, STP38N65M5, STW38N65M5 TO-220, STP38N65M5 Figure 25. TO-220 type A drawing BW\SH$B5HYB7 14/21 DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 Package mechanical data Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID022851 Rev 4 15/21 Package mechanical data 4.3 STB38N65M5, STP38N65M5, STW38N65M5 TO-247, STW38N65M5 Figure 26. TO-247 drawing 0075325_G 16/21 DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 Package mechanical data Table 11. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID022851 Rev 4 5.70 17/21 Packaging mechanical data 5 STB38N65M5, STP38N65M5, STW38N65M5 Packaging mechanical data Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 18/21 DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 Packaging mechanical data Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID022851 Rev 4 Min. Max. 330 13.2 26.4 30.4 19/21 Revision history 6 STB38N65M5, STP38N65M5, STW38N65M5 Revision history Table 13. Document revision history 20/21 Date Revision Changes 22-Feb-2012 1 First release. 21-Jun-2012 2 Document status changed from preliminary data to production data. Added Section 2.1: Electrical characteristics (curves). 05-Mar-2013 3 Added dv/dt value on Table 2: Absolute maximum ratings. 09-Apr-2014 4 – The part number STF38N65M5 has been moved to a separate datasheet – Minor text changes DocID022851 Rev 4 STB38N65M5, STP38N65M5, STW38N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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