STB80NE03L-06
N-channel 30V - 0.005Ω - 85A - D2PAK
STripFET™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
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Internal
schematic
diagram
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Orderocodes
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STB80NE03L-06
30V
■
Exceptional dv/dt capability
■
Low gate charge 100°C
■
100% Avalanche tested
ID(on) x RDS(on)max,
ID = 40A
30
50
S
6500
1500
500
pF
pF
pF
VDS = 25V, f = 1 MHz,
VGS =0
VDD = 24 V, ID = 80A,
VGS = 5V
95
30
44
130
nC
nC
nC
Typ.
Max.
Unit
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
Symbol
td(on)
tr
tr(Voff)
tf
tc
4/13
Switching times
Parameter
Test conditions
Min.
40
55
ns
Rise time
VDD = 15 V, ID = 40 A
RG = 4.7Ω VGS = 4.5 V
Figure 12.
260
350
ns
Off-voltage rise time
Fall time
Cross over time
VDD = 24 V, ID = 80 A,
RG = 4.7Ω, VGS = 5V
Figure 12.
70
165
250
95
220
340
ns
ns
ns
Turn-on delay time
STB80NE03L-06
Table 7.
Symbol
ISD
Electrical characteristics
Source drain diode
Parameter
Test conditions
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 80A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100A/µs, VDD = 15
V, TJ = 150°C
Figure 15.
trr
Qrr
IRRM
Min
Typ.
75
0.14
4
Max
Unit
80
320
A
A
1.5
V
ns
nC
A
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1. Pulse with limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/13
Electrical characteristics
STB80NE03L-06
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
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Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/13
STB80NE03L-06
Figure 7.
Electrical characteristics
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
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Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
7/13
Test circuit
3
STB80NE03L-06
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
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Figure 14. Test circuit for inductive load
Figure 15. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/13
STB80NE03L-06
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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9/13
Package mechanical data
STB80NE03L-06
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
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D
A
C
DETAIL "A"
A2
C2
DETAIL "A"
A1
B2
E
B
G
L2
L
L3
P011P6/F
10/13
STB80NE03L-06
5
Packaging mechanical data
Packaging mechanical data
D2PAK FOOTPRINT
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TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
0.153 0.161
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
P0
3.9
4.1
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
11/13
Revision history
6
STB80NE03L-06
Revision history
Table 8.
Revision history
Date
Revision
Changes
21-Jun-2004
5
Preliminary version
25-Jul-2006
6
New template, SOA updated
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12/13
STB80NE03L-06
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13/13
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