STD15P6F6AG
Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Features
Figure 1: Internal schematic diagram
D(2, TAB)
Order code
VDSS
RDS(on) max.
ID
STD15P6F6AG
-60 V
0.16 Ω
-10 A
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
G(1)
S(3)
AM11258v1
Table 1: Device summary
Order code
Marking
Package
Packaging
STD15P6F6AG
15P6F6
DPAK
Tape and Reel
October 2015
DocID028450 Rev 1
This is information on a product in full production.
1/15
www.st.com
Contents
STD15P6F6AG
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
5
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4.1
DPAK package information ............................................................... 9
4.2
Packing information ......................................................................... 12
Revision history ............................................................................ 14
DocID028450 Rev 1
STD15P6F6AG
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
-60
V
VGS
Gate-source voltage
± 20
V
(1)
ID
Drain current (continuous) at TC = 25 °C
-10
A
ID
Drain current (continuous) at TC = 100 °C
-7.2
A
(2)
IDM
Drain current (pulsed)
-40
A
PTOT
Total dissipation at TC = 25 °C
35
W
EAS
Single pulse avalanche energy (starting TJ=25 °C, ID=-3 A, VDD=-40 V)
80
mJ
VDG
Drain-gate voltage
-20
V
-55 to 175
°C
175
°C
Tstg
Storage temperature
Tj
Maximum junction temperature
Notes:
(1)
(2)
Limited by package
Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Rthj-case
Rthj-pcb
Parameter
Thermal resistance junction-case max
(1)
Thermal resistance junction-pcb max
Value
Unit
4.29
°C/W
50
°C/W
Notes:
(1)
2
When mounted on 1 inch FR-4, 2 Oz copper board
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Electrical characteristics
2
STD15P6F6AG
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage Drain
current
IGSS
Test conditions
Min.
VGS = 0 V, ID = -250 µA
-60
Typ.
Max.
Unit
V
VGS = 0 V, VDS = -60 V
-1
µA
VGS = 0 V, VDS = -60 V,
TC = 125 °C
-10
µA
Gate-body leakage current
VDS = 0 V, VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = -250 µA
-4
V
RDS(on)
Static drain-source onresistance
VGS = -10 V, ID = -5 A
0.13
0.16
Ω
Min.
Typ.
Max.
Unit
-
340
-
pF
-
40
-
pF
-
20
-
pF
-
6.4
-
nC
-
1.7
-
nC
-
1.7
-
nC
-2
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output
capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VDS = -48 V, f = 1 MHz, VGS = 0 V
VDD = -30 V, ID = -10 A, VGS = -10 V
(see Figure 14: "Gate charge test
circuit")
Qgs
Gate-source
charge
Qgd
Gate-drain charge
Table 6: Switching times
Symbol
Parameter
td(on)
Turn-on delay
time
tr
td(off)
tf
4/15
Rise time
Turn-off-delay
time
Test conditions
VDD = -48 V, ID = -5 A RG = 4.7 Ω,
VGS = -10 V (see Figure 13: "Switching
times test circuit for resistive load")
Fall time
Min.
Typ.
Max.
Unit
-
64
-
ns
-
5.3
-
ns
-
ns
-
ns
-
DocID028450 Rev 1
14
3.7
STD15P6F6AG
Electrical characteristics
Table 7: Source drain diode
Symbol
ISD
(1)
ISDM
VSD
(2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain
current
-
-10
A
Source-drain
current
(pulsed)
-
-40
A
-
-1.1
V
Forward on
voltage
trr
Reverse
recovery time
Qrr
Reverse
recovery
charge
IRRM
Reverse
recovery
current
VGS = 0 V, ISD = -5 A
ISD = -10 A, di/dt = 100 A/µs, VDD = -48 V,
(see Figure 15: "Test circuit for inductive
load switching and diode recovery times")
-
20
ns
-
17.8
nC
-
-1.8
A
Notes:
(1)
(2)
Pulse width limited by safe operating area.
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
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5/15
Electrical characteristics
2.2
STD15P6F6AG
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
K
GIPG180420141107SA
δ=0.5
0.2
0.1
0.05
10 -1
0.02
0.01
Single pulse
10 -2
10 -5
6/15
10 -4
10 -3
10 -2
10 -1
t p(s)
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Stati drain-source on-resistance
DocID028450 Rev 1
STD15P6F6AG
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized V(BR)DSS vs
temperature
C
(pF)
400
Ciss
300
200
100
0
0
10
20
30
40
Coss
Crss
50 VDS(V)
Figure 10: Normalized gate threshold voltage
vs temperature
Figure 11: Normalized on-resistance vs.
temperature
Figure 12: Source-drain diode forward characteristics
For the P-channel Power MOSFET, current and voltage polarities are reversed.
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Test circuits
3
STD15P6F6AG
Test circuits
Figure 13: Switching times test circuit for
resistive load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
8/15
DocID028450 Rev 1
STD15P6F6AG
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
4.1
DPAK package information
Figure 16: DPAK (TO-252) type A package outline
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Package information
STD15P6F6AG
Table 8: DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
4.60
4.70
4.80
e
2.16
2.28
2.40
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
10/15
Typ.
5.10
5.25
6.60
1.00
0.20
0°
DocID028450 Rev 1
8°
STD15P6F6AG
Package information
Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm)
DocID028450 Rev 1
11/15
Package information
4.2
STD15P6F6AG
Packing information
Figure 18: DPAK (TO-252) tape outline
12/15
DocID028450 Rev 1
STD15P6F6AG
Package information
Figure 19: DPAK (TO-252) reel outline
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
B1
D
1.5
D1
1.5
E
1.65
F
1.6
Min.
Max.
330
13.2
D
20.2
G
16.4
1.85
N
50
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
DocID028450 Rev 1
18.4
22.4
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Revision history
5
STD15P6F6AG
Revision history
Table 10: Document revision history
14/15
Date
Revision
20-Oct-2015
1
DocID028450 Rev 1
Changes
First release.
STD15P6F6AG
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