STD30PF03L

P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STD30PF03L STD30PF03L-1 s s STD30PF03L STD30PF03L-1 VDSS 30 V 30 V RDS(on) < 0.028Ω < 0.028Ω ID 24 A 24 A s s s TYPICAL RDS(on) = 0.025Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE LOW GATE CHARGE EXTREMELY LOW FIGURE OF MERIT (RDS(on) * Qg) 3 1 2 1 3 DPAK IPAK DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. INTERNAL SCHEMATIC DIAGRAM s APPLICATIONS DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (#) ID (#) IDM (l) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 24 24 96 70 0.47 – 55 to 175 175 Unit V V V A A A W W/°C °C °C (q) Pulse width limited by safe operating area (#) Current limited by wire bonding Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2002 1/8 STD30PF03L - STD30PF03L-1 THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Operating Junction Temperature 2.14 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) Max Value 24 350 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 16 V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 12 A VGS = 5 V, ID = 12 A Min. 1 0025 0.032 0.028 0.040 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V, ID = 12 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 23 1670 345 120 Max. Unit S pF pF pF 2/8 STD30PF03L - STD30PF03L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 24 V, ID = 24 A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 15 V, ID = 24 A, VGS = 5 V Min. Typ. 64 122 18.5 5.5 11 25 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 24 V, ID = 24 A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 36 26 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 24 A, VGS = 0 ISD = 24 A, di/dt = 100 A/µs, VDD = 24 V, Tj = 150 °C (see test circuit, Figure 5) 40 52 2.6 Test Conditions Min. Typ. Max. 24 96 2.3 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/8 STD30PF03L - STD30PF03L-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STD30PF03L - STD30PF03L-1 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 5/8 STD30PF03L - STD30PF03L-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 6/8 STD30PF03L - STD30PF03L-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 7/8 STD30PF03L - STD30PF03L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8