STD10PF06-1

STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET ■ ■ ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") DESCRIPTION ) (s This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. uc 3 2 d o r 1 eP IPAK TO-251 (Suffix “-1”) t e l o ) s t( 3 1 DPAK TO-252 (Suffix “T4”) s b O INTERNAL SCHEMATIC DIAGRAM t c u d o r P e APPLICATIONS ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 60 V 60 V ± 20 V 10 A ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C 7 A Drain Current (pulsed) 40 A IDM(•) Ptot Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed March 2002 . Value 40 W 0.27 W/°C 6 V/ns -65 to 175 °C 175 °C (1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STD10PF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 3.75 100 275 °C/W °C/W °C Max Value Unit AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) 125 mJ ) s t( ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V (*) Symbol RDS(on) Static Drain-source On Resistance od DYNAMIC so Ciss Coss Crss r P e let Symbol 2/9 uc Gate Threshold Voltage gfs (*) ) s ( t Parameter VGS(th) Ob Min. Drain-source Breakdown Voltage V(BR)DSS ON Test Conditions Parameter c u d Typ. o r P 60 e t le Test Conditions VDS = VGS ID = 250 µA VGS = 10 V ID = 5 A Test Conditions Forward Transconductance VDS = 25 V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 ID=5 A Unit V 1 10 µA µA ±1 µA Max. Unit 4 V 0.18 0.20 Ω Min. Typ. Max. Unit 2 5 S 850 230 75 pF pF pF so b O - Max. Min. Typ. 2 STD10PF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. td(on) tr Turn-on Delay Time Rise Time ID = 5 A VDD = 30 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 20 40 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 10 A VGS= 10 V 16 4 6 21 Typ. Max. ns ns nC nC nC ) s t( SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time ID = 5 A VDD = 30 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time ID = 10 A Vclamp = 48 V RG = 4.7Ω, VGS = 10 V (Inductive Load, Figure 5) o s b SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage trr Qrr IRRM ISD = 10 A du o r P e t e ol Safe Operating Area O ) s ( t c Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current (*)Pulsed: Pulse duration = 300 µs, duty cycle (•)Pulse width limited by safe operating area. s b O Test Conditions c u d 40 10 e t le o r P Min. 10 17 30 Typ. VGS = 0 di/dt = 100A/µs ISD = 10 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5) 100 260 5.2 Unit Unit ns ns ns ns ns Max. Unit 10 40 A A 2.5 V ns µC A 1.5 %. Thermal Impedance 3/9 STD10PF06 Output Characteristics Transfer Characteristics ) s t( c u d Transconductance e t le o s b O ) s ( t c u d o r P e t e l o bs Gate Charge vs Gate-source Voltage O 4/9 o r P Static Drain-source On Resistance Capacitance Variations STD10PF06 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature ) s t( c u d o r P Normalized Breakdown Voltage Temperature Source-drain Diode Forward Characteristics e t le o s b O ) s ( t c u d o r P e . bs t e l o . O 5/9 STD10PF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform ) s t( c u d Fig. 3: Switching Times Test Circuits For Resistive Load e t le o s b O ) s ( t c u d o r P e t e l o s b O Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 o r P Fig. 4: Gate Charge test Circuit STD10PF06 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 ) s t( B3 0.212 0.85 B5 0.033 c u d 0.3 0.012 B6 0.95 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 D 6 6.2 0.236 E 6.4 6.6 G 4.4 4.6 H 15.9 16.3 L 9 L1 0.8 )- t(s L2 0.8 c u d ro 0.244 l o s 0.252 0.260 0.173 0.181 0.626 0.641 9.4 0.354 0.370 1.2 0.031 0.047 Ob 1 0.031 0.039 C H A3 A1 C2 s b O B B3 = = 2 G = 1 = E B2 = 3 B5 L D B6 L2 = t e l o 0.023 A P e e t e o r P 0.037 0.023 L1 0068771-E 7/9 STD10PF06 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 B2 5.2 5.4 0.204 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 D 6 6.2 0.236 E 6.4 6.6 G 4.4 4.6 H 9.35 10.1 L2 )- 0.8 s ( t c u d o C2 A bs 0.244 0.260 s b O 0.173 0.181 0.368 0.397 1 0.023 0.031 0.039 DETAIL "A" A2 O 0.023 H r P e t e l o eP 0.023 A1 0.6 d o r 0.212 C L4 uc t e l o 0.252 ) s t( 0.035 L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 8/9 STD10PF06 ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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