STD3NK50ZT4

STD3NK50Z-1, STD3NK50ZT4 Datasheet N-channel 500 V, 2.8 Ω typ., 2.3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages Features Order codes TAB STD3NK50Z-1 TAB IPAK 1 2 2 3 1 3 DPAK D(2, TAB) G(1) STD3NK50ZT4 • • • • • VDSS RDS(on) max. PTOT 500 V 3.3 Ω 45 W Package IPAK DPAK Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications • S(3) AM01475V1 Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK50Z-1 STD3NK50ZT4 DS3956 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD3NK50Z-1, STD3NK50ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 500 V VGS Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 2.3 A Drain current (continuous) at TC = 100 °C 1.45 A Drain current (pulsed) 9.2 A Total dissipation at TC = 25 °C 45 W Peak diode recovery voltage slope 4.5 V/ns 2 kV -55 to 150 °C Value Unit ID ID IDM (1) PTOT dv/dt (2) ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS. Table 2. Thermal data Parameter Symbol Rthj-case Thermal resistance junction- case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) IPAK DPAK 2.78 °C/W 100 °C/W Thermal resistance junction-pcb 50 °C/W 1. When mounted on an 1-inch² FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol IAR EAS DS3956 - Rev 3 Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 2.3 A 120 mJ page 2/21 STD3NK50Z-1, STD3NK50ZT4 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. Max. 500 Unit V VGS = 0 V, VDS = 500 V 1 µA VGS = 0 V, VDS = 500 V, TC = 125 °C (1) 50 µA ±10 nA 3.75 4.5 V 2.8 3.3 Ω Typ. Max. Unit IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1.15 A 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) td(on) tr td(off) tf Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VGS = 0 V, VDS = 0 V to 400 V Turn-on delay time VDD = 250 V, ID = 1.15 A, Rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time Fall time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) Qg Total gate charge VDD = 400 V, ID = 2.3 A, Qgs Gate-source charge VGS = 0 to 10 V Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) Qgd Min. 280 - 42 pF 8 - 27.5 8 13 - ns 24 14 11 - 15 2.5 nC 5.6 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to 80% VDSS. Table 6. Source-drain diode Symbol ISD DS3956 - Rev 3 Parameter Test conditions Min. Typ. Max. Source-drain current - 2.3 ISDM (1) Source-drain current (pulsed) - 9.2 VSD (2) Forward on voltage - 1.6 ISD = 2.3 A, VGS = 0 V Unit A V page 3/21 STD3NK50Z-1, STD3NK50ZT4 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ISD = 2.3 A, di/dt = 100 A/µs - 250 ns Qrr Reverse recovery charge VDD = 40 V - 745 nC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 6 A trr Reverse recovery time ISD = 2.3 A, di/dt = 100 A/µs - 300 ns Qrr Reverse recovery charge VDD = 40 V, Tj = 150 °C - 960 nC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 6.2 A Min. Typ. Max. Unit ±30 - - V IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Table 7. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ±1 mA, ID = 0 A The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS3956 - Rev 3 page 4/21 STD3NK50Z-1, STD3NK50ZT4 Electrical characteristics (curves) 2.1 DS3956 - Rev 3 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Capacitance variations Figure 6. Gate charge vs gate-source voltage page 5/21 STD3NK50Z-1, STD3NK50ZT4 Electrical characteristics (curves) Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 9. Source-drain diode forward characteristic Figure 10. Maximum avalanche energy vs temperature Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Normalized on resistance vs temperature DS3956 - Rev 3 page 6/21 STD3NK50Z-1, STD3NK50ZT4 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS3956 - Rev 3 page 7/21 STD3NK50Z-1, STD3NK50ZT4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS3956 - Rev 3 page 8/21 STD3NK50Z-1, STD3NK50ZT4 IPAK (TO-251) type A package information 4.1 IPAK (TO-251) type A package information Figure 19. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS3956 - Rev 3 page 9/21 STD3NK50Z-1, STD3NK50ZT4 IPAK (TO-251) type A package information Table 8. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS3956 - Rev 3 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 10/21 STD3NK50Z-1, STD3NK50ZT4 IPAK (TO-251) type C package information 4.2 IPAK (TO-251) type C package information Figure 20. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS3956 - Rev 3 page 11/21 STD3NK50Z-1, STD3NK50ZT4 IPAK (TO-251) type C package information Table 9. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 DS3956 - Rev 3 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° page 12/21 STD3NK50Z-1, STD3NK50ZT4 DPAK (TO-252) type A package information 4.3 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_25 DS3956 - Rev 3 page 13/21 STD3NK50Z-1, STD3NK50ZT4 DPAK (TO-252) type A package information Table 10. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS3956 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 14/21 STD3NK50Z-1, STD3NK50ZT4 DPAK (TO-252) type C package information 4.4 DPAK (TO-252) type C package information Figure 22. DPAK (TO-252) type C package outline 0068772_C_25 DS3956 - Rev 3 page 15/21 STD3NK50Z-1, STD3NK50ZT4 DPAK (TO-252) type C package information Table 11. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS3956 - Rev 3 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 16/21 STD3NK50Z-1, STD3NK50ZT4 DPAK (TO-252) type C package information Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25_C DS3956 - Rev 3 page 17/21 STD3NK50Z-1, STD3NK50ZT4 Ordering information 5 Ordering information Table 12. Order codes Order code STD3NK50Z-1 STD3NK50ZT4 DS3956 - Rev 3 Marking D3NK50Z Package Packing IPAK Tube DPAK Tape and reel page 18/21 STD3NK50Z-1, STD3NK50ZT4 Revision history Table 13. Document revision history Date Version Changes 09-Jul-2004 1 First release. 17-Jan-2005 2 Complete version Removed maturity status indication from cover page. The document status is production data. The part number STQ3NK50ZR-AP has been moved to a separate datasheet. 03-Aug-2018 3 Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Added Section 5 Ordering information. Minor text changes. DS3956 - Rev 3 page 19/21 STD3NK50Z-1, STD3NK50ZT4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 5 4.1 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.4 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 DS3956 - Rev 3 page 20/21 STD3NK50Z-1, STD3NK50ZT4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS3956 - Rev 3 page 21/21