STD85N10F7AG

STD85N10F7AG Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code TAB VDS STD85N10F7AG 100 V RDS(on) max ID PTOT 0.010 Ω 70 A 85 W • Designed for automotive applications and AEC-Q101 qualified 3 1 DPAK • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications Figure 1. Internal schematic diagram • Switching applications Description '7$% This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 $0Y Table 1. Device summary Order code Marking Package Packing STD85N10F7AG 85N10F7 DPAK Tape and reel May 2015 This is information on a product in full production. DocID027030 Rev 2 1/16 www.st.com Contents STD85N10F7AG Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 2/16 .............................................. 8 4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . 10 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DocID027030 Rev 2 STD85N10F7AG 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 70 Drain current (continuous) at TC = 100 °C 48 IDM (1) Drain current (pulsed) 280 A PTOT Total dissipation at TC = 25 °C 85 W - 55 to 175 °C Value Unit ID Tstg Tj A Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. Table 3. Thermal data Symbol Parameter Rthj-pcb Thermal resistance junction-pcb max 50 Rthj-case Thermal resistance junction-case max 1.76 °C/W DocID027030 Rev 2 3/16 16 Electrical characteristics 2 STD85N10F7AG Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) IGSS Min. Typ. Max. 100 Unit V VDS = 100 V 1 µA VDS = 100 V, TC=125 °C 100 Gate-body leakage current (VDS = 0) VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.5 4.5 V RDS(on) Static drain-source on-resistance ID = 40 A, VGS=10 V 0.0085 0.010 Ω Min. Typ. Max. Unit - 3100 - - 700 - - 45 - - 45 - - 18 - - 13 - Min. Typ. Max. - 19 - - 32 - - 36 - - 13 - 2.5 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 VDD = 50 V, ID = 70 A, VGS = 10 V (see Figure 14) pF nC Table 6. Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 50 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15 and Figure 18) Fall time DocID027030 Rev 2 Unit ns STD85N10F7AG Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 70 A ISDM (1) Source-drain current (pulsed) - 280 A VSD (2) Forward on voltage - 1.1 V ISD ISD = 70 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 70 A, di/dt = 100 A/µs VDD = 80 V, Tj=150 °C (see Figure 18) - 70 ns - 125 nC - 3.6 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027030 Rev 2 5/16 16 Electrical characteristics 2.1 STD85N10F7AG Electrical characteristics (curves) Figure 2. Safe operating area ID (A) 100 Figure 3. Thermal impedance GIPD220720131539FSR his t in a n tio y m a er d b Op ite Lim AM18025v1 K δ=0.5 is ea a r (on) S D xR 0.2 0.1 100µs 10 0.05 0.02 10 -1 c 0.01 1ms Tj=175°C Tc=25°C 1 Single pulse 10ms Sinlge pulse 0.1 0.1 10 1 10 -2 10 -5 VDS(V) Figure 4. Output characteristics 10 -4 10 -2 10 -3 10 -1 10 0 tp(s) Figure 5. Transfer characteristics AM15972v1 AM15971v1 ID (A) ID (A) VGS =10 V 300 300 9V 250 VDS=9V 250 8V 200 200 7V 150 150 100 6V 100 50 50 5V 0 0 0 2 4 6 8 Figure 6. Static drain-source on-resistance AM18070v1 RDS(on) (mΩ) 2 VDS(V) VGS=10V 4 8 6 10 VGS(V) Figure 7. Gate charge vs gate-source voltage AM15974v1 VGS (V) VDD=50V ID=70A 12 9.1 10 8.9 8.7 8 8.5 6 8.3 8.1 4 7.9 2 7.7 7.5 0 6/16 20 40 60 80 ID(A) DocID027030 Rev 2 0 0 10 20 30 40 50 Qg(nC) STD85N10F7AG Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature C (pF) 3500 AM15975v1 3000 Ciss AM15976v1 VGS(th) (norm) 1.2 ID=250µA 1 2500 0.8 2000 0.6 1500 0.4 1000 0.2 500 0 0 20 80 60 40 Coss Crss VDS(V) Figure 10. Normalized on-resistance vs temperature AM15977v1 RDS(on) (norm) ID=40A VGS=10V 2 0 -55 -30 -5 20 45 95 120 70 TJ(°C) Figure 11. Source-drain diode forward characteristics AM15978v1 VSD (V) 1.1 TJ=-55°C 1 1.5 0.9 TJ=25°C 0.8 1 0.7 TJ=150°C 0.5 0.6 0 -55 -30 -5 0.5 20 45 70 95 120 TJ(°C) 0 20 40 60 80 ISD(A) Figure 12. Normalized VDS vs temperature AM15979v1 VDS (norm) ID=1mA 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 -55 -30 -5 20 45 70 95 120 TJ(°C) DocID027030 Rev 2 7/16 16 Test circuits 3 STD85N10F7AG Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 DocID027030 Rev 2 10% AM01473v1 STD85N10F7AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027030 Rev 2 9/16 16 Package information 4.1 STD85N10F7AG DPAK (TO-252) type A2 package information Figure 19. DPAK (TO-252) type A2 package outline BW\SH$BUHY 10/16 DocID027030 Rev 2 STD85N10F7AG Package information Table 8. DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 6.60 1.00 R V2 5.25 0.20 0° 8° DocID027030 Rev 2 11/16 16 Package information STD85N10F7AG Figure 20. DPAK (TO-252) recommended footprint (a) )3BB5 a. All dimensions are in millimeters 12/16 DocID027030 Rev 2 STD85N10F7AG 4.2 Package information Packing information Figure 21. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID027030 Rev 2 13/16 16 Package information STD85N10F7AG Figure 22. Reel outline T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 9. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 14/16 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID027030 Rev 2 18.4 22.4 STD85N10F7AG 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 21-Oct-2014 1 First release. 26-May-2015 2 Text and formatting edits throughout document. Promoted document from “preliminary data” to “production data” Updated device package information. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID027030 Rev 2