STGP15M120F3

STGP15M120F3 Datasheet Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package Features TAB 1 2 3 TO-220 • • 10 μs of minimum short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A • • Tight parameter distribution Positive VCE(sat) temperature coefficient • • Low thermal resistance Maximum junction temperature: TJ = 175 °C Applications C(2, TAB) • • • • G(1) Industrial drives UPS Solar Welding Description E(3) G1C2TE3 Product status link This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. STGP15M120F3 Product summary Order code STGP15M120F3 Marking G15M120F3 Package TO-220 Packing Tube DS11255 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STGP15M120F3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Collector-emitter voltage (VGE = 0 V) 1200 V Continuous collector current at TC = 25 °C 30 A Continuous collector current at TC = 100 °C 15 A ICP(1) Pulsed collector current 60 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 259 W Tstg Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC TJ 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol DS11255 - Rev 3 Parameter RthJC Thermal resistance junction-case 0.58 RthJA Thermal resistance junction-ambient 62.5 °C/W page 2/15 STGP15M120F3 Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min. V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 1200 VGE = 15 V, IC = 15 A Collector-emitter saturation voltage VGE = 15 V, IC = 30 A, VCE = VGE, IC = 500 μA ICES Collector cut-off current IGES Gate-emitter leakage current V 2.2 TJ = 175 °C Gate threshold voltage Unit 2.3 2.1 TJ = 125 °C VGE(th) Max. V 1.85 VGE = 15 V, IC = 15 A, VCE(sat) Typ. 5 6 7 V VGE = 0 V, VCE = 1200 V 25 μA VCE = 0 V, VGE = ±20 V ±250 nA Table 4. Dynamic characteristics Symbol Parameter Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. Unit - 985 - pF - 118 - pF - 38 - pF Qg Total gate charge VCC = 960 V, IC = 15 A, - 53 - nC Qge Gate-emitter charge VGE = 0 to 15 V - 8 - nC Qgc Gate-collector charge (see Figure 23. Gate charge test circuit) - 32 - nC Min. Typ. Max. Unit Turn-on delay time - 26 - ns Current rise time - 12 - ns - 1000 - A/μs - 122 - ns - 163 - ns - 0.55 - mJ Table 5. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time Test conditions VCE = 600 V, IC = 15 A, VGE = 15 V, RG = 22 Ω, (see Figure 22. Test circuit for inductive load switching) Eon(1) Turn-on switching energy (2) Turn-off switching energy - 0.85 - mJ Total switching energy - 1.4 - mJ Eoff Ets DS11255 - Rev 3 Parameter page 3/15 STGP15M120F3 Electrical characteristics Symbol td(on) tr Parameter Test conditions Turn-on delay time Current rise time Min. Typ. Max. Unit - 25 - ns - 14 - ns Turn-on current slope VCE = 600 V, IC = 15 A, - 857 - A/μs Turn-off delay time VGE = 15 V, RG = 22 Ω, - 136 - ns Current fall time TJ = 175 °C - 270 - ns Eon(1) Turn-on switching energy (see Figure 22. Test circuit for inductive load switching) - 1.1 - mJ (2) Turn-off switching energy - 1.13 - mJ Ets Total switching energy - 2.23 - mJ tsc Short-circuit withstand time - μs (di/dt)on td(off) tf Eoff VCC ≤ 600 V, VGE = 15 V, TJstart = 150 °C 10 1. Including the recovery of the external diode. The diode is the same of the co-packed STGWA15M120DF3 device. 2. Including the tail of the collector current. DS11255 - Rev 3 page 4/15 STGP15M120F3 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature GIPD271020141420FSR Ptot (W) VGE ≥ 15 V, T J ≤ 175 °C 250 Figure 2. Collector current vs case temperature GIPD291020141132FSR IC (A) VGE ≥ 15 V, T J ≤ 175 °C 30 25 200 20 150 15 100 10 50 5 0 0 100 50 TC(°C) 150 Figure 3. Output characteristics (TJ = 25 °C) GIPD291020141140FSR IC (A) VGE=15V 0 0 100 50 TC(°C) 150 Figure 4. Output characteristics (TJ = 175°C) GIPD291020141151FSR IC (A) VGE=15V 13V 50 50 13V 40 40 11V 30 30 20 20 9V 10 0 0 1 2 3 4 5 VCE(V) Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) GIPD291020141158FSR VGE=15V IC=30A 3.2 11V 9V 10 0 0 7V 1 2 3 4 5 VCE(V) Figure 6. VCE(sat) vs collector current GIPD291020141315FSR VCE(sat) (V) 3.2 Tj=175°C VGE=15V 2.8 2.8 Tj=25°C 2.4 2.4 IC=15A 2.0 2.0 1.6 1.2 -50 DS11255 - Rev 3 Tj=-40°C 1.6 IC=7.5A 1.2 0 50 100 150 TC(°C) 0.8 0 5 10 15 20 25 IC(A) page 5/15 STGP15M120F3 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency GIPD291020141321FSR IC (A) Figure 8. Safe operating area GIPD291020141330FSR IC (A) TC=80°C 40 1µs TC=100°C 30 10µs 10 20 100µs 10 Single pulse, Tc=25°C Tj