STGP8M120DF3

STGP8M120DF3 Datasheet Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package Features TAB 1 2 3 TO-220 • • 10 µs of minimum short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 8 A • • Tight parameter distribution Positive VCE(sat) temperature coefficient • • • Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C C(2, TAB) Applications G(1) E(3) NG1E3C2T • • • • • Industrial drives UPS Solar Welding General-purpose inverters Description Product status link STGP8M120DF3 This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Product summary Order code STGP8M120DF3 Marking G8M120DF3 Package TO-220 Packing Tube DS11847 - Rev 2 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com STGP8M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit 1200 V Continuous collector current at TC = 25 °C 16 A Continuous collector current at TC = 100 °C 8 A ICP(1) Pulsed collector current 32 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 16 A Continuous forward current at TC = 100 °C 8 A IFP Pulsed forward current 32 A PTOT Total dissipation at TC = 25 °C 167 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit Thermal resistance junction-case IGBT 0.9 °C/W Thermal resistance junction-case diode 1.47 °C/W 50 °C/W VCES IC IF (1) TJ Parameter Collector-emitter voltage (VGE = 0 V) 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol RthJC RthJA DS11847 - Rev 2 Parameter Thermal resistance junction-ambient page 2/15 STGP8M120DF3 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min. V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 1200 VGE = 15 V, IC = 8 A Collector-emitter saturation voltage IF = 8 A 2.4 IF = 8 A, TJ = 125 °C 1.75 IF = 8 A, TJ = 175 °C 1.55 VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA ICES Collector cut-off current IGES Gate-emitter leakage current V 2.2 TJ = 175 °C Forward on-voltage Unit 2.3 2.1 TJ = 125 °C VGE = 15 V, IC = 8 A, VF Max. V 1.85 VGE = 15 V, IC = 8 A, VCE(sat) Typ. 5 6 3.35 V 7 V VCE = 1200 V 25 µA VGE = ± 20 V ±250 µA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Qge Qgc DS11847 - Rev 2 Parameter Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 542 - - 74.4 - - 21 - Total gate charge VCC = 960 V, IC = 8 A, - 32 - Gate-emitter charge VGE = 0 to 15 V - 4.5 - Gate-collector charge (see Figure 29. Gate charge test circuit) - 18.5 - pF nC page 3/15 STGP8M120DF3 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Unit Turn-on delay time 20 - ns Current rise time 8.4 - ns 800 - A/µs 126 - ns 136 - ns 0.39 - mJ Turn-on current slope Turn-off-delay time Current fall time Test conditions Min. VCE = 600 V, IC = 8 A, VGE = 15 V, RG = 33 Ω (see Figure 28. Test circuit for inductive load switching) Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.37 - mJ Total switching energy 0.76 - mJ Turn-on delay time 19 - ns Current rise time 9.8 - ns Eoff Ets td(on) tr (di/dt)on td(off) Turn-on current slope VCE = 600 V, IC = 8 A, 656 - A/µs Turn-off-delay time VGE = 15 V, RG = 33 Ω, 134 - ns 222 - ns 0.66 - mJ Current fall time TJ = 175 °C (1) Turn-on switching energy (see Figure 28. Test circuit for inductive load switching) Eoff(2) Turn-off switching energy 0.58 - mJ Ets Total switching energy 1.24 - mJ tsc Short-circuit withstand time - µs tf Eon VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C 10 1. Including the reverse recovery of the diode 2. Including the tail of the collector current Table 6. Diode switching characteristics (inductive load) Symbol trr Qrr DS11847 - Rev 2 Parameter Test conditions Reverse recovery time Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 8 A, VR = 600 V, VGE = 15 V, RG = 33 Ω, di/dt = 1000 A/µs (see Figure 28. Test circuit for inductive load switching) IF = 8 A, VR = 600 V, VGE = 15 V, RG = 33 Ω, TJ = 175 °C, di/dt = 840 A/µs (see Figure 28. Test circuit for inductive load switching) Min. Typ. Max. Unit - 103 - ns - 0.87 - µC - 19.2 - A - 720 - A/µs - 211 - µJ - 280 - ns - 1.9 - µC - 21.8 - A - 450 - A/µs - 404 - µJ page 4/15 STGP8M120DF3 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature P TOT (W) IGBT140920161248PDT V GE ≥ 15 V, T J ≤ 175 °C Figure 2. Collector current vs case temperature IC (A) IGBT140920161249CCT V GE ≤ 15 V, T J ≥ 175 °C 16 150 12 100 8 50 4 0 0 50 100 150 T C (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) IGBT140920161249OC25 V GE = 15 V 100 150 T C (°C) Figure 4. Output characteristics (TJ = 175 °C) IC (A) IGBT140920161250OC175 13 V 24 11 V 16 50 V GE = 15 V 13 V 24 0 0 11 V 16 8 9V 8 9V 0 0 1 2 7V 4 3 7V 5 V CE (V) Figure 5. VCE(sat) vs junction temperature VCE(sat) 3 IGBT140920161250VCET VGE = 15 V IC = 16 A 2 DS11847 - Rev 2 50 100 3 150 4 5 V CE (V) VCE(sat) IGBT140920161250VCEC VGE = 15 V TJ = 175 °C TJ = 25 °C 2 TJ = -40 °C 1.5 IC = 4 A 0 2 2.5 IC = 8 A 1.5 1 Figure 6. VCE(sat) vs collector current 3 2.5 1 -50 0 0 TJ (°C) 1 0 4 8 12 IC (A) page 5/15 STGP8M120DF3 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) Figure 8. Forward bias safe operating area IGBT140920161251CCS TC = 80 °C 24 TC = 100 °C 16 Rectangular current 8 shape (duty cycle=0.5 VCC = 600 V, RG = 33 Ω VGE = 0/15 V, T = 175 °C) 0 J 10 0 10 1 f (kHz) 10 2 Figure 9. Transfer characteristics IC (A) Figure 10. Diode VF vs forward current IGBT140920161251TCH V CE = 6 V VF (V) IGBT140920161252DVF TJ = -40 °C 4 24 T J = 25 °C TJ = 25 °C 3 16 2 TJ = 175 °C T J = 175 °C 8 1 0 4 6 8 10 V GE (V) Figure 11. Normalized VGE(th) vs junction temperature VGE(th) (norm.) IGBT140920161252NVGE VCE = VGE IC = 500 µA 1.1 0 0 8 16 24 IF (A) Figure 12. Normalized V(BR)CES vs junction temperature IGBT140920161253NVBR V(BR)CES (norm.) IC = 2 mA 1.06 1.02 1.0 0.98 0.9 0.8 -50 DS11847 - Rev 2 0.94 0 50 100 150 TJ (°C) 0.9 -50 0 50 100 150 TJ (°C) page 6/15 STGP8M120DF3 Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) IGBT140920161253CVR Figure 14. Gate charge vs gate-emitter voltage VGE (V) IGBT140920161253GCGE VCC = 960 V, IC = 8 A, IG = 1 mA Cies 15 100 10 Coes 10 5 Cres 1 0.1 1 10 100 1000 VCE (V) Figure 15. Switching energy vs collector current E (µJ) 1800 IGBT140920161254SLC VCC = 600 V, RG = 33 Ω, VGE = 15 V, TJ = 175 °C 0 0 10 20 30 Qg (nC) Figure 16. Switching energy vs gate resistance E (µJ) 1600 IGBT140920161255SLG VCC = 600 V, IC = 8 A, VGE = 15 V, TJ = 175 °C Etot Etot 1200 1200 Eon 600 800 Eoff 0 0 4 8 12 IC (A) Figure 17. Switching energy vs temperature E (µJ) IGBT140920161255SLT VCC = 600 V, IC = 8 A, 1100 RG = 33 Ω, VGE = 15 V 900 300 0 DS11847 - Rev 2 Eoff 40 80 120 Etot RG (Ω) Figure 18. Switching energy vs collector emitter voltage E (µJ) IGBT140920161256SLV IC = 8 A, RG = 33 Ω, 2000 VGE = 15 V, TJ = 175 °C 1500 700 500 400 0 Eon Etot Eon 1000 Eon 500 Eoff 50 100 150 TJ (°C) 0 200 Eoff 400 600 800 VCE (V) page 7/15 STGP8M120DF3 Electrical characteristics (curves) Figure 19. Short-circuit time and current vs VGE tsc (µs) IGBT140920161256SCV VCC ≤ 600 A, TJ ≤ 150 °C 40 Isc (A) Figure 20. Switching times vs collector current t (ns) IGBT140920161257STC tf 50 td(off) 10 2 30 tSC 40 ISC 30 td(on) 20 10 0 9 10 1 tr 20 10 11 12 13 14 10 VGE (V) 15 Figure 21. Switching times vs gate resistance t (ns) IGBT140920161258STR 10 0 0 VCC = 600 V, VGE = 15 V, RG = 33 Ω, TJ = 175 °C 4 8 30 td(off) 100 IC (A) Figure 22. Reverse recovery current vs diode current slope Irrm (A) tf 12 IGBT140920161259RRC VCC = 600 V, VGE = 15 V, IF = 8 A, TJ = 175 °C 25 td(on) 20 10 tr 1 0 15 VCC = 600 V, VGE = 15 V, IC = 8 A, TJ = 175 °C 40 80 120 10 RG (Ω) Figure 23. Reverse recovery time vs diode current slope trr (ns) IGBT140920161259RRT 550 850 1150 di/dt (A/µs) Figure 24. Reverse recovery charge vs diode current slope Qrr (µC) VCC = 600 V, VGE = 15 V, IF = 8 A, TJ = 175 °C 500 5 250 IGBT140920161259RRQ VCC = 600 V, VGE = 15 V, IF = 8 A, TJ = 175 °C 2 400 1.9 300 1.8 200 250 DS11847 - Rev 2 550 850 1150 di/dt (A/µs) 1.7 250 550 850 1150 di/dt (A/µs) page 8/15 STGP8M120DF3 Electrical characteristics (curves) Figure 25. Reverse recovery energy vs diode current slope Err (µJ) IGBT140920161300RRE VCC = 600 V, VGE = 15 V, IF = 8 A, TJ = 175 °C 500 450 400 350 300 250 250 550 850 1150 di/dt (A/µs) Figure 26. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 27. Thermal impedance for diode DS11847 - Rev 2 page 9/15 STGP8M120DF3 Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching C A Figure 29. Gate charge test circuit k A k L=100 µH G E B B + 3.3 µF C G RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM015 04v 1 Figure 30. Switching waveform Figure 31. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% Tr(Voff) 25 Tcross 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS11847 - Rev 2 page 10/15 STGP8M120DF3 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11847 - Rev 2 page 11/15 STGP8M120DF3 TO-220 type A package information 4.1 TO-220 type A package information Figure 32. TO-220 type A package outline 0015988_typeA_Rev_21 DS11847 - Rev 2 page 12/15 STGP8M120DF3 TO-220 type A package information Table 7. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS11847 - Rev 2 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 13/15 STGP8M120DF3 Revision history Table 8. Document revision history Date Revision 26-Sep-2016 1 Changes First release. Removed maturity status indication from cover page. The document status is production data. 19-Apr-2018 2 Updated features and applications. Minor text changes DS11847 - Rev 2 page 14/15 STGP8M120DF3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11847 - Rev 2 page 15/15