STGP6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet - production data
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Figure 1: Internal schematic diagram
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGP6M65DF2
G6M65DF2
TO-220
Tube
August 2016
DocID028696 Rev 3
This is information on a product in full production.
1/17
www.st.com
Contents
STGP6M65DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 7
3
Test circuits ................................................................................... 12
4
Package information ..................................................................... 13
4.1
5
2/17
TO-220 type A package information ................................................ 14
Revision history ............................................................................ 16
DocID028696 Rev 3
STGP6M65DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VCES
IC
Parameter
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
12
A
Continuous collector current at TC = 100 °C
6
A
ICP(1)
Pulsed collector current
24
A
VGE
Gate-emitter voltage
±20
V
Continuous forward current at TC = 25 °C
12
A
IF
Continuous forward current at TC = 100 °C
6
A
IFP(1)
Pulsed forward current
24
A
PTOT
Total dissipation at TC = 25 °C
88
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature range
- 55 to 175
°C
Value
Unit
TJ
Notes:
(1)Pulse
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
1.7
°C/W
RthJC
Thermal resistance junction-case diode
5
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
DocID028696 Rev 3
3/17
Electrical characteristics
2
STGP6M65DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
V(BR)CES
Collector-emitter
breakdown voltage
VCE(sat)
Collector-emitter
saturation voltage
VF
VGE(th)
Test conditions
VGE = 0 V, IC = 250 µA
Forward on-voltage
Min.
Typ.
650
1.55
VGE = 15 V, IC = 6 A, TJ = 125 °C
1.9
VGE = 15 V, IC = 6 A, TJ = 175 °C
2.1
IF = 6 A
2.2
IF = 6 A, TJ = 125 °C
2.0
IF = 6 A, TJ = 175 °C
1.9
VCE = VGE, IC = 250 µA
ICES
Collector cut-off
current
IGES
Gate-emitter leakage
current
5
Unit
V
VGE = 15 V, IC = 6 A
Gate threshold voltage
Max.
6
2.0
V
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ± 20 V
±250
µA
Unit
Table 5: Dynamic characteristics
Symbol
4/17
Parameter
Test conditions
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCE= 25 V, f = 1 MHz, VGE = 0 V
VCC = 520 V, IC = 6 A, VGE = 15 V
(see Figure 30: " Gate charge test
circuit")
DocID028696 Rev 3
Min.
Typ.
Max.
-
530
-
-
31
-
-
11
-
-
21.2
-
-
5.2
-
-
8.8
-
pF
nC
STGP6M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
Typ.
Max.
Unit
Turn-on delay
time
15
-
ns
tr
Current rise
time
5.8
-
ns
(di/dt)on
Turn-on
current slope
828
-
A/µs
td(off)
Turn-off-delay
time
90
-
ns
130
-
ns
td(on)
tf
Parameter
Current fall
time
Test conditions
Min.
VCE = 400 V, IC = 6 A, VGE = 15 V,
RG = 22 Ω (see Figure 29: " Test circuit
for inductive load switching" )
Eon(1)
Turn-on
switching
energy
0.036
-
mJ
Eoff(2)
Turn-off
switching
energy
0.200
-
mJ
Ets
Total switching
energy
0.236
-
mJ
td(on)
Turn-on delay
time
17
-
ns
tr
Current rise
time
7
-
ns
(di/dt)on
Turn-on
current slope
685
-
A/µs
td(off)
Turn-off-delay
time
86
-
ns
205
-
ns
tf
Current fall
time
VCE = 400 V, IC = 6 A, VGE = 15 V,
RG = 22 Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
Eon(1)
Turn-on
switching
energy
0.064
-
mJ
Eoff(2)
Turn-off
switching
energy
0.290
-
mJ
Ets
Total switching
energy
0.354
-
mJ
tsc
Short-circuit
withstand time
VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C
6
-
µs
VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C
10
-
µs
Notes:
(1)Turn-on
switching energy includes reverse recovery of the diode.
(2)Turn-off
switching energy also includes the tail of the collector current.
DocID028696 Rev 3
5/17
Electrical characteristics
STGP6M65DF2
Table 7: Diode switching characteristics (inductive load)
Symbol
6/17
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
-
140
ns
Qrr
Reverse recovery
charge
-
210
nC
Irrm
Reverse recovery
current
-
6.6
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
430
A/µs
Err
Reverse recovery
energy
-
16
µJ
trr
Reverse recovery
time
-
200
ns
Qrr
Reverse recovery
charge
-
473
nC
Irrm
Reverse recovery
current
-
9.6
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
428
A/µs
Err
Reverse recovery
energy
-
32
µJ
IF = 6 A, VR = 400 V, VGE = 15 V
(see Figure 29: " Test circuit for
inductive load switching")
di/dt = 1000 A/µs
IF = 6 A, VR = 400 V, VGE = 15 V
TJ = 175 °C (see Figure 29: " Test
circuit for inductive load switching")
di/dt = 1000 A/µs
DocID028696 Rev 3
STGP6M65DF2
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case
temperature
Figure 3: Collector current vs. case
temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
DocID028696 Rev 3
7/17
Electrical characteristics
8/17
STGP6M65DF2
Figure 8: Collector current vs. switching
frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
DocID028696 Rev 3
STGP6M65DF2
Electrical characteristics
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter
voltage
Figure 16: Switching energy vs. collector
current
Figure 17: Switching energy vs. gate
resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector
emitter voltage
DocID028696 Rev 3
9/17
Electrical characteristics
10/17
STGP6M65DF2
Figure 20: Short-circuit time and current vs.
VGE
Figure 21: Switching times vs. collector
current
Figure 22: Switching times vs. gate
resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode
current slope
Figure 25: Reverse recovery charge vs. diode
current slope
DocID028696 Rev 3
STGP6M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
10
0.05
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
10
-4
10
-3
10
-2
10
-1
tp (s)
Figure 28: Thermal impedance for diode
DocID028696 Rev 3
11/17
Test circuits
3
STGP6M65DF2
Test circuits
Figure 29: Test circuit for inductive load
switching
Figure 30: Gate charge test circuit
VCC
C
A
A
12 V
L=100 µH
G
B
B
3.3
µF
C
G
+
1 kΩ
100 nF
E
RG
47 kΩ
VCC
1000
µF
Vi ≤ VGMAX
D.U.T
E
2200
µF
IG=CONST
2.7 kΩ
100 Ω
D.U.T.
VG
47 kΩ
PW
1 kΩ
AM01504v 1
AM01505v1
Figure 31: Switching waveform
12/17
DocID028696 Rev 3
Figure 32: Diode reverse recovery waveform
STGP6M65DF2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID028696 Rev 3
13/17
Package information
4.1
STGP6M65DF2
TO-220 type A package information
Figure 33: TO-220 type A package outline
14/17
DocID028696 Rev 3
STGP6M65DF2
Package information
Table 8: TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID028696 Rev 3
15/17
Revision history
5
STGP6M65DF2
Revision history
Table 9: Document revision history
Date
Revision
30-Nov-2015
1
First release.
2
Modified: Table 4: "Static characteristics", Table 5: "Dynamic
characteristics", Table 6: "IGBT switching characteristics (inductive
load)", and Table 7: "Diode switching characteristics (inductive load)"
Added: Section 2.1: "Electrical characteristics (curves)"
Minor text changes.
3
Updated Table 2: "Absolute maximum ratings", Table 4: "Static
characteristics", Table 6: "IGBT switching characteristics (inductive
load)", Table 7: "Diode switching characteristics (inductive load)".
Updated Figure 9: "Forward bias safe operating area", Figure 12:
"Normalized VGE(th) vs. junction temperature", Figure 20: "Shortcircuit time and current vs. VGE", Figure 23: "Reverse recovery
current vs. diode current slope".
Changed Figure 25: "Reverse recovery charge vs. diode current
slope" and Figure 26: "Reverse recovery energy vs. diode current
slope".
13-Jan-2016
03-Aug-2016
16/17
Changes
DocID028696 Rev 3
STGP6M65DF2
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DocID028696 Rev 3
17/17