STN4NF06L

STN4NF06L Datasheet Automotive-grade N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Features 4 2 1 3 • • • • SOT-223 Order code VDS RDS(on) max. ID STN4NF06L 60 V < 0.1 Ω 4A AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge D(2, 4) Applications • G(1) Switching applications Description S(3) Int_schem_nTnZ_SOT_223 This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STN4NF06L Product summary Order code STN4NF06L Marking 4NF06L Package SOT-223 Packing Tape and reel DS5801 - Rev 3 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com STN4NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0 V) 60 V VGS Gate-source voltage ±16 V Drain current (continuous) at TC = 25 °C 4 A Drain current (continuous) at TC = 100 °C 2.9 A IDM(2) Drain current (pulsed) 16 A PTOT Total power dissipation at TC = 25 °C 3.3 W 0.026 W/°C Peak diode recovery avalanche energy 10 V/ns Single pulse avalanche energy 200 mJ -55 to 150 °C Value Unit 38 °C/W 100 °C/W 260 °C ID(1) Derating Factor dv/dt(3) (4) EAS Tstg Storage temperature range TJ Operating junction temperature range 1. Current limited by the package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 3 A, di/dt ≤ 150 A/μs, VDD = V(BR)DSS, TJ ≤ TJ max. 4. Starting TJ = 25 °C, ID = 4 A, VDD = 30 V. Table 2. Thermal data Symbol Rthj-pcb Rthj-pcb(2) (3) TJ Parameter (1) Thermal resistance junction-pcb Maximum lead temperature for soldering purpose 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t