STN1NF20

STN1NF20 N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET™ II Power MOSFET Features Order code VDSS RDS(on) max ID STN1NF20 200 V < 1.5 Ω 1A ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 4 1 2 3 SOT-223 Applications ■ Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STN1NF20 1NF20 SOT-223 Tape and reel November 2011 Doc ID 022321 Rev 1 1/12 www.st.com 12 Contents STN1NF20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 022321 Rev 1 STN1NF20 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 20 V ID Drain current continuous Tamb = 25 °C 1 A ID Drain current continuous Tamb = 100 °C 1 A IDM (1) Drain current pulsed 4 A PTOT Total dissipation at Tamb = 25 °C 2 W Peak diode recovery voltage slope 10 V/ns -55 to 150 °C Value Unit 62.50 °C/W dv/dt (2) Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. Isd ≤1 A, di/dt ≤200 A/µs, VDD ≤80% V(BR)DSS. Table 3. Thermal data Symbol Rthj-amb Table 4. Parameter Thermal resistance junction to ambient Thermal data Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive(1) 1 A EAS Single pulse avalanche energy (2) 70 mJ 1. Pulse width limited by TJMAX. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. Doc ID 022321 Rev 1 3/12 Electrical characteristics 2 STN1NF20 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS VDS = 200 V Zero gate voltage drain current (VGS = 0) VDS = 200 V, TC=125 °C IGSS Gate-body leakage current Gate threshold voltage VGS = VDS, ID = 250 µA RDS(on) Static drain-source on resistance Symbol Min. Typ. Max. 200 Unit V 1 50 µA µA ±100 nA 3 4 V 1.1 1.5 Ω Min. Typ. Max. Unit - pF pF pF VGS = ± 20 V, VDS=0 VGS(th) Table 6. 2 VGS = 10 V, ID = 0.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 90 30 4 Rg Instrinsic gate resistance f=1 MHz open drain - 4.8 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 160 V, ID = 1 A, VGS = 10 V (see Figure 14) - 5.7 1.1 3.0 - nC nC nC Ciss Coss Crss 4/12 On /off states Doc ID 022321 Rev 1 STN1NF20 Electrical characteristics Table 7. Symbol td(v) tr tf tc(off) Table 8. Symbol Switching times Parameter Voltage delay time Voltage rise time Current fall time Crossing time Parameter ISDM (1) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM VDD = 100 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) Min. Typ. Max Unit - 4 5.6 12.4 15.8 - ns ns ns ns Min. Typ. Max. Unit - 1 4 A A - 1.6 V Source drain diode Source-drain current Source-drain current (pulsed) ISD Test conditions Test conditions ISD = 1 A, VGS = 0 Reverse recovery time ISD = 1 A, di/dt = 100 A/µs Reverse recovery charge VDD = 20 V Reverse recovery current (see Figure 15) - 51.8 90.7 3.5 ns nC A Reverse recovery time ISD = 1 A, di/dt = 100 A/µs Reverse recovery charge VDD = 20 V, Tj = 150 °C Reverse recovery current (see Figure 15) - 58.0 106.7 3.7 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022321 Rev 1 5/12 Electrical characteristics STN1NF20 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM10378v1 ID (A) Tj=150°C Tc=25°C Single pulse is ea ) ar (on is DS h t R x in n ma io at by r pe ed O mit Li 1 0.1 10µs 100µs 1ms 10ms 0.01 0.001 0.1 Figure 4. 10 1 VDS(V) 100 Output characteristics AM10379v1 ID (A) VGS=10V 5 7V 4 VDS=20V 5 4 3 6V 3 2 2 1 5V 0 0 Figure 6. AM10380v1 ID (A) 4 8 12 16 VDS(V) Normalized BVDSS vs temperature AM10381v1 BVDSS (norm) ID=1mA 1.10 1 0 0 Figure 7. RDS(on) (Ω) 2 4 8 6 VGS(V) Static drain-source on resistance AM10382v1 VGS=10V 1.16 1.06 1.14 1.02 1.12 0.98 1.10 0.94 0.90 -50 -25 6/12 0 25 50 75 100 TJ(°C) 1.08 0 Doc ID 022321 Rev 1 0.5 1 ID(A) STN1NF20 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM10383v1 VGS (V) VDS (V) VDS 12 VDD=160V ID=1A Capacitance variations C (pF) AM10384v1 100 Ciss 10 Coss 160 140 10 120 8 100 6 80 60 4 40 2 Crss 20 0 0 2 1 4 3 5 Figure 10. Normalized gate threshold voltage vs temperature AM10385v1 VGS(th) (norm) 1 0.1 0 Qg(nC) 6 1 10 100 VDS(V) Figure 11. Normalized on resistance vs temperature AM10386v1 RDS(on) (norm) ID=250µA 1.05 2.0 1.00 1.6 0.95 0.90 1.2 0.85 0.8 0.80 0.75 -50 -25 0 25 50 75 100 TJ(°C) 0.4 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics Doc ID 022321 Rev 1 7/12 Test circuits 3 STN1NF20 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 022321 Rev 1 10% AM01473v1 STN1NF20 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 022321 Rev 1 9/12 Package mechanical data Table 9. STN1NF20 SOT-223 mechanical data mm Dim. Min. Typ. A Max. 1.80 A1 0.02 0.1 B 0.60 0.70 0.85 B1 2.90 3.00 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.00 7.30 V 10° Figure 19. SOT-223 mechanical data drawing 0046067_M 10/12 Doc ID 022321 Rev 1 STN1NF20 5 Revision history Revision history Table 10. Document revision history Date Revision 04-Nov-2011 1 Changes First release. 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