STN7NF10

STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STN7NF10 s s VDSS 100 V RDS(on) < 0.065 Ω ID 5A 2 TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature Value 100 100 ±20 5 3.4 20 3.3 0.026 –55 to 150 Unit V V V A A A W W/°C °C (q ) Pulse width limited by safe operating area December 2002 1/8 STN7NF10 THERMAL DATA Rthj-PCB Rthj-PCB Tl Thermal Resistance Junction-PCB Max(*) Thermal Resistance Junction-PCB Max(**) Maximum Lead Temperature For Soldering Purpose (1.6 mm from case,for 10s) 38 100 260 °C/W °C/W °C Note: (*) When mounted on 1 in2 FR-4 BOARD,2 oz Cu, t