STN4NF20L

STN4NF20L N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™ II Power MOSFET Features Order code VDSS RDS(on) max. ID STN4NF20L 200 V < 1.5 Ω 1A ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 2 1 2 3 SOT-223 Application Switching applications Description This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STN4NF20L 4NF20L SOT-223 Tape and reel October 2010 Doc ID 17445 Rev 2 1/12 www.st.com 12 Contents STN4NF20L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 17445 Rev 2 STN4NF20L 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 20 V ID Drain current continuous TC = 25 °C 1 A ID Drain current continuous TC = 100 °C 0.63 A 4 A IDM (1) Drain current pulsed PTOT(2) Total dissipation at TC = 25 °C 3.3 W Peak diode recovery voltage slope 20 V/ns - 55 to 150 °C Value Unit 38 °C/W 62.5 °C/W Value Unit 1 A 90 mJ dv/dt (3) Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. This value is rated according to Rthj-amb ≤ 10 sec. 3. Isd ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS. Table 3. Thermal data Symbol Rthj-amb(1) Rthj-amb (2) Parameter Thermal resistance junction to ambient 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec). 2. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec). Table 4. Thermal data Symbol IAR EAS Parameter (1) Avalanche current, repetetive or not repetetive Single pulse avalanche energy (2) 1. Pulse width limited by TJMAX. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. Doc ID 17445 Rev 2 3/12 Electrical characteristics 2 STN4NF20L Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VGS = VDS, ID = 250 µA RDS(on) Static drain-source on resistance Symbol Min. Typ. Max. 200 Unit V 1 50 µA µA ± 100 nA 2 3 V 1.1 1.13 1.5 1.55 Ω Ω Min. Typ. Max. Unit VGS = ± 20 V, VDS=0 VGS(th) Table 6. 1 VGS = 10 V, ID = 0.5 A VGS = 5 V, ID = 0.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 150 30 4 - pF pF pF Rg Instrinsic gate resistance f=1 MHz open drain - 5.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 160 V, ID = 1 A, VGS = 10 V (see Figure 13) - 0.9 2.6 6.9 - nC nC nC Min. Typ. Max Unit - 3.6 2 10.4 15.4 - ns ns ns ns Ciss Coss Crss Table 7. Symbol td(v) tr tf tc(off) 4/12 On /off states Switching times Parameter Voltage delay time Voltage rise time Current fall time Crossing time Test conditions VDD = 100 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 12) Doc ID 17445 Rev 2 STN4NF20L Electrical characteristics Table 8. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM trr Qrr IRRM Test conditions ISD = 1 A, VGS = 0 Reverse recovery time ISD = 1 A, di/dt = 100 A/µs Reverse recovery charge VDD = 60 V Reverse recovery current (see Figure 14) Reverse recovery time ISD = 1 A, di/dt = 100 A/µs Reverse recovery charge VDD = 60 V, Tj = 150 °C Reverse recovery current (see Figure 14) Min. Typ. Max. Unit - 1 4 A A - 1.6 V - 51 90 3.5 ns nC A - 56 105 3.7 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17445 Rev 2 5/12 Electrical characteristics STN4NF20L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM08185v1 ID (A) (o 10µs DS Op Lim era ite tion d by in th m is a ax R re 1 n) a is Tj=150°C Tc=25°C Single pulse 100µs 0.1 1ms 10ms 0.01 0.1 Figure 4. 10 1 VDS(V) 100 Output characteristics AM08186v1 ID (A) VGS=10V AM08187v1 ID (A) 6 VDS=15V 5 5V 5 4 4 3 4V 3 2 2 1 1 3V 0 0 Figure 6. 20 10 Normalized BVDSS vs temperature AM08188v1 BVDSS 0 0 VDS(V) (norm) Figure 7. 2 3 4 5 6 7 8 9 VGS(V) Static drain-source on resistance AM08189v1 RDS(on) (Ohm) 1.11 1.09 1 ID=0.5A VGS=5V 1.08 1.07 1.06 1.05 1.03 1.04 1.01 VGS=10V 0.99 1.02 0.97 0.95 0.93 -50 -25 6/12 0 25 50 75 100 TJ(°C) Doc ID 17445 Rev 2 1 0 0.2 0.4 0.6 0.8 1 ID(A) STN4NF20L Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM08190v1 VGS (V) VDD=160V 12 VGS 500 ID=1A VDS 10 Capacitance variations AM08191v1 C (pF) 300 400 200 8 300 Ciss 6 200 4 100 100 2 Coss 0 0 1 2 4 3 5 6 7 8 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM08192v1 VGS(th) 0 Crss 0 10 (norm) 20 30 40 50 60 VDS(V) Figure 11. Normalized on resistance vs temperature AM08193v1 RDS(on) (norm) 2.1 1.10 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 -25 0.5 -50 -25 0.7 0 25 50 75 100 TJ(°C) Doc ID 17445 Rev 2 0 25 50 75 100 TJ(°C) 7/12 Test circuits 3 STN4NF20L Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 16. Unclamped inductive waveform AM01471v1 Figure 17. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 17445 Rev 2 10% AM01473v1 STN4NF20L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17445 Rev 2 9/12 Package mechanical data STN4NF20L SOT-223 mechanical data mm. DIM. min. typ A max. 1.80 A1 0.02 B 0.60 0.70 0.85 0.1 B1 2.90 3.00 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.00 7.30 10 o V 0046067_L 10/12 Doc ID 17445 Rev 2 STN4NF20L 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 29-Apr-2010 1 First release. 11-Oct-2010 2 Document status promoted from preliminary data to datasheet. Doc ID 17445 Rev 2 11/12 STN4NF20L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 17445 Rev 2