STN851-A

STN851-A Low voltage fast-switching NPN power transistor Features ■ AEC Q101 compliant ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting SOT-223 power package in tape and reel 4 2 1 3 SOT-223 Applications ■ High efficiency low voltage switching applications Figure 1. Internal schematic diagram Description The device is manufactured in planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging STN851-A N851 SOT-223 Tape and reel March 2009 Rev 1 1/10 www.st.com 10 Electrical ratings 1 STN851-A Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) 150 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Emitter-base voltage (IC = 0) 7 V Collector current 5 A Collector peak current (tP < 5 ms) 10 A Base current 1 A IBM Base peak current (tP < 5 ms) 2 A Ptot Total dissipation at Tamb = 25 °C 1.6 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 78 °C/W IC ICM IB TJ Table 3. Symbol Rthj-amb Max. operating junction temperature Thermal data Parameter Thermal resistance junction-ambient (1) 1. Device mounted on a p.c.b. area of 1 cm2 2/10 Value STN851-A 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit VCB = 120 V Tc = 100 C 50 1 nA µA 10 nA VCB = 120 V ICBO Collector cut-off current (IE = 0) IEBO Emitter cut-off current (IC = 0) VEB = 7 V Collector-base breakdown voltage (IE = 0) IC = 100 µA 150 V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 10 mA 60 V IE = 100 µA 7 V V(BR)CBO V(BR)EBO VCE(sat) (1) Emitter-base breakdown voltage (IC = 0) Collector-emitter saturation voltage o IC = 100 mA IB = 5 mA IC = 1 A_ _ IB = 50 mA IC = 2 A IB = 50 mA IC = 5 A_ _ IB = 200 mA 10 70 140 320 1 1.15 V 0.89 1 V VBE(sat) (1) Base-emitter saturation voltage IC = 4 A_ _ IB = 200 mA VBE(on) (1) Base-emitter on voltage IC = 4 A_ _ VCE = 1 V IC = 10 mA IC = 2 A_ _ VCE = 1 V VCE = 1 V IC = 5 A VCE = 1 V hFE (1) DC current gain IC = 10 A _ VCE = 1 V 150 150 90 30 300 270 140 50 50 120 250 500 mV mV mV mV 350 fT Transition frequency VCE = 10 V IC = 100 mA 130 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 50 pF VCC = 10 V 50 ns 1.35 µs 120 ns Resistive load ton Turn-on time IC = 1 A ts Storage time IB1 = -IB2 = 0.1 A tf Fall time 1. Pulse duration = 300 µs, duty cycle ≤ 1.5% 3/10 Electrical characteristics STN851-A 2.1 Electrical characteristics (curves) Figure 2. Derating curve Figure 3. DC current gain Figure 4. Collector-emitter saturation voltage Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage Figure 7. Base-emitter on voltage 4/10 STN851-A Figure 8. Electrical characteristics Resistive load switching time Figure 10. Resistive load switching time Figure 9. Resistive load switching time Figure 11. Inductive load switching time Figure 12. Inductive load switching time 5/10 Electrical characteristics 2.2 Test circuit Figure 13. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 6/10 STN851-A STN851-A 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark. 7/10 Package mechanical data STN851-A SOT-223 mechanical data mm. DIM. min. typ A max. 1.80 A1 0.02 0.1 B 0.60 0.70 0.85 B1 2.90 3.00 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.00 7.30 V 10 o 0046067_L 8/10 STN851-A 4 Revision history Revision history Table 5. Document revision history Date Revision 16-Mar-2009 1 Changes First issue 9/10 STN851-A Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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