STN851
Low voltage fast-switching NPN power transistor
Features
■ ■ ■
Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed
4
Applications
■ ■ ■ ■
1
2
3
Emergency lighting Voltage regulators Relay drivers High efficiency low voltage switching applications
SOT-223
Figure 1.
Internal schematic diagram
Description
The device is manufactured in Planar Technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Table 1.
Device summary
Marking N851 Package SOT-223 Packaging Tape and reel
Order code STN851
March 2009
Rev 7
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www.st.com 10
Electrical ratings
STN851
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Value 150 60 7 5 10 1 2 1.6 -65 to 150 150 Unit V V V A A A A W °C °C
Table 3.
Symbol Rthj-amb
Thermal data
Parameter Thermal resistance junction-ambient (1) Value 78 Unit °C/W
1. Device mounted on a p.c.b. area of 1 cm2
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STN851
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 4.
Symbol ICBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Collector-base breakdown voltage (IE = 0) Test conditions VCB = 120 V VCB = 120 V Tc = 100 C VEB = 7 V
o
Min.
Typ.
Max. 50 1 10
Unit nA µA nA
IEBO
V(BR)CBO
IC = 100 µA
150
V
Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) V(BR)EBO Emitter-base breakdown voltage (IC = 0)
IC = 10 mA
60
V
IE = 100 µA IC = 100 mA IB = 5 mA IB = 50 mA IB = 50 mA IB = 200 mA IB = 200 mA VCE = 1 V VCE = 1 V VCE = 1 V VCE = 1 V _ VCE = 1 V IC = 100 mA f = 1 MHz
7 10 70 140 320 1 0.89 150 150 90 30 300 270 140 50 130 50 50 120 250 500 1.15 1
V mV mV mV mV V V
VCE(sat) (1)
Collector-emitter saturation voltage
IC = 1 A_ _ IC = 2 A IC = 5 A_ _
VBE(sat) (1) VBE(on) (1)
Base-emitter saturation voltage Base-emitter on voltage
IC = 4 A_ _ IC = 4 A_ _ IC = 10 mA IC = 2 A_ _ IC = 5 A IC = 10 A VCE = 10 V VCB = 10 V
hFE (1)
DC current gain
350
fT CCBO
Transition frequency Collector-base capacitance (IE = 0) Resistive load Turn-on time Storage time Fall time
MHz pF
ton ts tf
IC = 1 A
VCC = 10 V
50 1.35 120
ns µs ns
IB1 = -IB2 = 0.1 A
1. Pulse duration = 300 µs, duty cycle ≤ 1.5%
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Electrical characteristics
STN851
2.1
Figure 2.
Electrical characteristics (curves)
Derating curve Figure 3. DC current gain
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Collector-emitter saturation voltage
Figure 6.
Base-emitter saturation voltage
Figure 7.
Base-emitter on voltage
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STN851 Figure 8. Resistive load switching time Figure 9.
Electrical characteristics Resistive load switching time
Figure 10. Resistive load switching time
Figure 11. Inductive load switching time
Figure 12. Inductive load switching time
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Electrical characteristics
STN851
2.2
Test circuit
Figure 13. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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STN851
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark.
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Package mechanical data
STN851
SOT-223 mechanical data
mm. DIM. min. A A1 B B1 c D e e1 E H V 3.30 6.70 0.02 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10 o typ max. 1.80 0.1 0.85 3.15 0.35 6.70
0046067_L
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STN851
Revision history
4
Revision history
Table 5.
Date 09-Sep-2003 16-Mar-2009
Document revision history
Revision 6 7 Updated SOT-223 mechanical data Changes
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STN851
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