STP10N60M2

STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages Features TAB TAB 2 Order codes 2 3 1 3 1 DPAK VDS @ TJ max. RDS(on) max. STB10N60M2 D²PAK STD10N60M2 TAB 1 3 TO-220 D(2, TAB) Package D²PAK 650 V 0.60 Ω STP10N60M2 2 ID • • Extremely low gate charge Excellent output capacitance (Coss) profile • • 100% avalanche tested Zener-protected 7.5 A DPAK TO-220 Applications G(1) • Switching applications Description S(3) AM01476v1_tab These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB10N60M2 STD10N60M2 STP10N60M2 DS9703 - Rev 4 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com STB10N60M2, STD10N60M2, STP10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 7.5 Drain current (continuous) at TC = 100 °C 4.9 IDM(1) Drain current (pulsed) 30 A PTOT Total power dissipation at TC = 25 °C 85 W dv/dt(2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range VGS ID TJ Parameter A V/ns °C -55 to 150 Operating junction temperature range °C 1. Pulse limited by safe operating area. 2. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs, VDS peak < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V. Table 2. Thermal data Symbol RthJC (1) RthJB RthJA Parameter Value D2PAK Thermal resistance, junction-to-case Thermal resistance, junction-to-board 30 DPAK TO-220 Unit 1.47 °C/W 50 °C/W Thermal resistance, junction-to-ambient 62.5 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol (1) Parameter Value Unit IAR Avalanche current, repetitive or not repetitive 1.5 A EAS(2) Single pulse avalanche energy 110 mJ 1. Pulse width limited by TJ max. 2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V. DS9703 - Rev 4 page 2/27 STB10N60M2, STD10N60M2, STP10N60M2 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 3 A VGS = 0 V, VDS = 600 V, TC = 125 Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 °C(1) 100 µA ±10 µA 3 4 V 0.55 0.60 Ω Min. Typ. Max. Unit - 400 - pF - 22 - pF - 0.84 - pF 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 83 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 6.4 - Ω Qg Total gate charge - 13.5 - nC Qgs Gate-source charge - 2.1 - nC Qgd Gate-drain charge - 7.2 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 7.5 A, VGS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS9703 - Rev 4 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 3.75 A, - 8.8 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 8 - ns Turn-off delay time (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) - 32.5 - ns - 13.2 - ns Fall time page 3/27 STB10N60M2, STD10N60M2, STP10N60M2 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 7.5 A Source-drain current (pulsed) - 30 A 1.6 V Forward on voltage VGS = 0 V, ISD = 7.5 A - trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, - 270 ns Qrr Reverse recovery charge VDD = 60 V - 2 µC IRRM Reverse recovery current (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 14.4 A trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, - 376 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 2.8 µC Reverse recovery current (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 15 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS9703 - Rev 4 page 4/27 STB10N60M2, STD10N60M2, STP10N60M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for D²PAK and TO-220 ID (A) GADG150120210825SOA ZthJC (°C/W) IDM ar is n) th S(o in R D n y tio b ra ted pe limi Os RDS(on) max. i 10 0 tp =100µs VDS (V) 10 2 GADG150120210932SOA is th S(o in R D n y tio b ra ted pe limi Os RDS(on) max. i 10 0 n) tp =10µs 10 0 0.3 0.2 0.1 0.05 RthJC = 1.47 °C/W duty = ton / T VDS (V) AM15823v1 T 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 6. Transfer characteristics AM15824v1 ID (A) VDS=18V 14 6V ton -2 12 10 8 8 6 5V 4 4 2 DS9703 - Rev 4 tp (s) 10 -1 duty=0.5 10 -1 10 0 0 10 -2 GADG150120211138ZTH 0.4 10 VGS=7, 8, 9, 10V 6 10 -3 Single pulse 10 2 12 10 -4 Figure 4. Maximum transient thermal impedance for DPAK Figure 5. Output characteristics ID (A) 14 T 10 -5 V(BR)DSS TJ = 150 °C TC = 25 °C Single pulse 10 1 ton tp =1ms 10 -1 10 0 RthJC = 1.47 °C/W duty = ton / T tp =100µs tp =10ms 10 -2 10 -1 10 -2 10 -6 tp =1µs ea ar 0.1 0.05 ZthJC (°C/W) IDM 10 1 10 -1 Single pulse Figure 3. Safe operating area for DPAK ID (A) 10 0 V(BR)DSS TJ = 150 °C TC = 25 °C Single pulse 10 1 duty=0.5 tp =1ms 10 -1 10 0 0.3 0.2 0.4 tp =10µs tp =10ms 10 -2 10 -1 GADG150120210847ZTH tp =1µs ea 10 1 Figure 2. Maximum transient thermal impedance for D²PAK and TO-220 2 4V 5 10 15 20 VDS(V) 0 0 2 4 6 8 10 VGS(V) page 5/27 STB10N60M2, STD10N60M2, STP10N60M2 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage AM15825v1 VGS (V) VDD=480V ID=7.5A 12 VDS 10 8 Figure 8. Static drain-source on-resistance VDS (V) RDS(on) (Ω) 500 0.58 400 0.57 300 0.56 200 0.55 100 0.54 AM15826v1 VGS=10 V 6 4 2 0 0 2 4 6 8 10 0 Qg(nC) 12 AM15827v1 7 ID(A) AM15828v1 (norm) ID=250 µA Ciss 100 1.1 1.0 Coss f = 1 MHz 0.9 Crss 1 0.1 0.1 1 100 10 VDS (V) Figure 11. Normalized on-resistance vs temperature AM15829v1 RDS(on) (norm) 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 12. Normalized V(BR)DSS vs temperature AM15831v1 V(BR)DSS norm 2.5 1.11 VGS=10 V 2.3 ID =1mA 1.09 2.1 1.07 1.9 1.05 1.7 1.03 1.5 1.3 1.01 1.1 0.99 0.9 0.97 0.7 0.95 0.5 -50 -25 0.93 -50 -25 DS9703 - Rev 4 6 5 4 3 VGS(th) 1000 10 2 Figure 10. Normalized gate threshold voltage vs temperature Figure 9. Capacitance variations C (pF) 0.53 1 0 25 50 75 100 125 TJ(°C) 0 25 50 75 100 125 TJ(°C) page 6/27 STB10N60M2, STD10N60M2, STP10N60M2 Electrical characteristics (curves) Figure 13. Source-drain diode forward characteristics AM15830v1 VSD(V) Figure 14. Output capacitance stored energy AM15832v1 Eoss (µJ) 1.4 1.2 3 TJ=-50°C 1.0 2 0.8 0.6 TJ=25°C TJ=150°C 0.4 1 0.2 0.0 0 DS9703 - Rev 4 1 2 3 4 5 6 7 ISD(A) 0 0 100 200 300 400 500 600 VDS(V) page 7/27 STB10N60M2, STD10N60M2, STP10N60M2 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS9703 - Rev 4 page 8/27 STB10N60M2, STD10N60M2, STP10N60M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 21. D²PAK (TO-263) type A package outline 0079457_26 DS9703 - Rev 4 page 9/27 STB10N60M2, STD10N60M2, STP10N60M2 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS9703 - Rev 4 Typ. 0.40 0° 8° page 10/27 STB10N60M2, STD10N60M2, STP10N60M2 D²PAK (TO-263) type A package information Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm) 2.54 16.90 9.75 12.20 1.60 2.54 5.08 Footprint_26 DS9703 - Rev 4 page 11/27 STB10N60M2, STD10N60M2, STP10N60M2 DPAK (TO-252) type A package information 4.2 DPAK (TO-252) type A package information Figure 23. DPAK (TO-252) type A package outline 0068772_A_30 DS9703 - Rev 4 page 12/27 STB10N60M2, STD10N60M2, STP10N60M2 DPAK (TO-252) type A package information Table 9. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS9703 - Rev 4 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 13/27 STB10N60M2, STD10N60M2, STP10N60M2 DPAK (TO-252) type C package information 4.3 DPAK (TO-252) type C package information Figure 24. DPAK (TO-252) type C package outline 0068772_C_30 DS9703 - Rev 4 page 14/27 STB10N60M2, STD10N60M2, STP10N60M2 DPAK (TO-252) type C package information Table 10. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS9703 - Rev 4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 15/27 STB10N60M2, STD10N60M2, STP10N60M2 DPAK (TO-252) type E package information 4.4 DPAK (TO-252) type E package information Figure 25. DPAK (TO-252) type E package outline 0068772_typeE_rev.30 DS9703 - Rev 4 page 16/27 STB10N60M2, STD10N60M2, STP10N60M2 DPAK (TO-252) type E package information Table 11. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 L4 DS9703 - Rev 4 Max. 2.74 0.89 1.27 1.02 page 17/27 STB10N60M2, STD10N60M2, STP10N60M2 DPAK (TO-252) type E package information Figure 26. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_30 DS9703 - Rev 4 page 18/27 STB10N60M2, STD10N60M2, STP10N60M2 TO-220 type A package information 4.5 TO-220 type A package information Figure 27. TO-220 type A package outline 0015988_typeA_Rev_23 DS9703 - Rev 4 page 19/27 STB10N60M2, STD10N60M2, STP10N60M2 TO-220 type A package information Table 12. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS9703 - Rev 4 Typ. 0.03 0.10 page 20/27 STB10N60M2, STD10N60M2, STP10N60M2 D²PAK and DPAK packing information 4.6 D²PAK and DPAK packing information Figure 28. Tape outline DS9703 - Rev 4 page 21/27 STB10N60M2, STD10N60M2, STP10N60M2 D²PAK and DPAK packing information Figure 29. Reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 13. D²PAK tape and reel mechanical data Tape Dim. DS9703 - Rev 4 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 22/27 STB10N60M2, STD10N60M2, STP10N60M2 D²PAK and DPAK packing information Table 14. DPAK tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 B1 D DS9703 - Rev 4 Reel 1.5 Min. Max. 330 13.2 D1 1.5 G 16.4 E 1.65 1.85 N 50 18.4 F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 22.4 page 23/27 STB10N60M2, STD10N60M2, STP10N60M2 Order codes 5 Order codes Table 15. Device summary Order code Marking STB10N60M2 STD10N60M2 STP10N60M2 DS9703 - Rev 4 Package D²PAK 10N60M2 DPAK TO-220 Packing Tape and reel Tube page 24/27 STB10N60M2, STD10N60M2, STP10N60M2 Revision history Table 16. Document revision history Date Version 29-May-2013 1 Changes First release. – Added: D²PAK package – Modified: title and RDS(on) values in cover page – Modified: RDS(on) values in Table 5 06-Dec-2013 2 – Modified: RG value in Table 6 – Modified: Figure 9 and ID value in Figure 12 – Added: Table 9, 13, Figure 22 and 23 – Updated: Table 10, 11, Figure 24, 25 and 26 Minor text changes. Updated the title and the description in cover page. Updated Table 4: "Avalanche characteristics". 08-Mar-2017 3 Updated Section 4.2: "DPAK (TO-252) type A package information". Added Section 4.4: "DPAK (TO-252) type E package information", and Section 4.7: "IPAK (TO-251) type C package information". Minor text changes. The part number STU10N60M2 have been removed and the document has been updated accordingly. 19-Jan-2021 4 Updated Figure 1. Safe operating area for D²PAK and TO-220, Figure 2. Maximum transient thermal impedance for D²PAK and TO-220, Figure 3. Safe operating area for DPAK and Figure 4. Maximum transient thermal impedance for DPAK. Minor text changes. DS9703 - Rev 4 page 25/27 STB10N60M2, STD10N60M2, STP10N60M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.6 D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 DS9703 - Rev 4 page 26/27 STB10N60M2, STD10N60M2, STP10N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9703 - Rev 4 page 27/27