STP130N6F7
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STP130N6F7
60 V
5.0 mΩ
80 A
160 W
•
•
•
•
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
•
Figure 1: Internal schematic diagram
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
D(2, TAB)
G(1)
S(3)
AM01475v1_Tab
Table 1: Device summary
Order code
Marking
Package
Packing
STP130N6F7
130N6F7
TO-220
Tube
July 2015
DocID027410 Rev 3
This is information on a product in full production.
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www.st.com
Contents
STP130N6F7
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3
Test circuits ..................................................................................... 7
4
Package information ....................................................................... 8
4.1
5
2/12
TO-220 type A package information.................................................. 9
Revision history ............................................................................ 11
DocID027410 Rev 3
STP130N6F7
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
±20
V
Drain current (continuous) at Tcase = 25 °C
80
Drain current (continuous) at Tcase = 100 °C
80
IDM
Drain current (pulsed)
320
A
PTOT
Total dissipation at Tcase = 25 °C
160
W
(3)
EAS
Single pulse avalanche energy
200
mJ
175 to -55
°C
Value
Unit
(1)
ID
(2)
Tstg
Tj
Storage temperature
Operating junction temperature
A
Notes:
(1)
(2)
(3)
Current is limited by package.
Pulse width is limited by safe operating area.
starting Tj = 25 °C, ID = 20 A, VDD = 40 V.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
0.94
Rthj-amb
Thermal resistance junction-ambient
62.5
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°C/W
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Electrical characteristics
2
STP130N6F7
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = 60 V
1
µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250 µA
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 40 A
4.2
5.0
mΩ
Min.
Typ.
Max.
Unit
-
2600
-
-
1200
-
-
115
-
-
42
-
-
13.6
-
-
13
-
Test conditions
Min.
Typ.
Max.
VDD = 30 V, ID = 40 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 13:
"Switching times test circuit for
resistive load" and Figure 18:
"Switching time waveform")
-
24
-
-
44
-
-
62
-
-
24
-
Min.
Typ.
Max.
Unit
1.2
V
V(BR)DSS
60
V
2
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0 V
VDD = 30 V, ID = 80 A, VGS = 10 V
(see Figure 14: "Gate charge test
circuit")
pF
nC
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Unit
ns
Table 7: Source-drain diode
Symbol
(1)
VSD
trr
Parameter
Forward on voltage
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Test conditions
VGS = 0 V, ISD = 80 A
ISD = 80 A, di/dt = 100 A/µs,
VDD = 48 V (see Figure 15: "Test
circuit for inductive load switching
and diode recovery times")
Notes:
(1)
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Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027410 Rev 3
-
50
ns
-
56
nC
-
2.2
A
STP130N6F7
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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Electrical characteristics
STP130N6F7
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Source-drain diode forward characteristics
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STP130N6F7
3
Test circuits
Test circuits
Figure 13: Switching times test circuit for resistive
load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching
and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
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Package information
4
STP130N6F7
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
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STP130N6F7
4.1
Package information
TO-220 type A package information
Figure 19: TO-220 type A package outline
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Package information
STP130N6F7
Table 8: TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
10/12
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
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STP130N6F7
5
Revision history
Revision history
Table 9: Document revision history
Date
Revision
Changes
26-Jan-2015
1
First release.
16-Jun-2015
2
Datasheet promoted from preliminary data to production data
Text and formatting edits throughout document
In Section Electrical ratings:
- updated Table Absolute maximum ratings
In Section Electrical characteristics:
- updated and renamed Table Static (was On/off states)
- updated Table Switching times
- updated Table Source drain diode
Added Section Electrical characteristics (curves)
08-Jul-2015
3
In Section Electrical characteristics (curves):
- updated Figures Output characteristics and Transfer characteristics
DocID027410 Rev 3
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STP130N6F7
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