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STP28NM60ND

STP28NM60ND

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFETN-CH600V23ATO220

  • 数据手册
  • 价格&库存
STP28NM60ND 数据手册
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 2 3 1 3 VDS @ TJ max. RDS(on) max ID 0.150 Ω 23 A 2 1 2 D PAK STB28NM60ND TO-220FP STF28NM60ND TAB 650 V STP28NM60ND STW28NM60ND 3 1 2 3 2 1 TO-220 TO-247 • Intrinsic fast-recovery body diode • 100% avalanche tested • Low input capacitance and gate charge Figure 1. Internal schematic diagram • Low gate input resistance • Extremely high dv/dt and avalanche capabilities ' Ć7$% Applications • Switching applications *  Description 6  $0Y These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging D2PAK Tape and reel STB28NM60ND STF28NM60ND TO-220FP 28NM60ND STP28NM60ND TO-220 STW28NM60ND TO-247 May 2014 This is information on a product in full production. DocID024520 Rev 3 Tube 1/22 www.st.com 22 Contents STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK, STB28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220FP, STF28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-220, STP28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 TO-247, STW28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 DocID024520 Rev 3 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D2PAK, TO-220, TO-247 VDS Drain-source voltage 600 VGS Gate-source voltage ±25 Unit TO-220FP V V (1) ID Drain current (continuous) at TC = 25 °C 23 ID Drain current (continuous) at TC = 100 °C 14.5 14.5(1) A Drain current (pulsed) 92 92(1) A Total dissipation at TC = 25 °C 190 35 W IDM (2) PTOT dv/dt(3) 23 Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Tstg Storage temperature TJ Max. operating junction temperature A 40 V/ns 2500 V –55 to 150 °C 150 °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤ 23 A, di/dt ≤ 600 A/μs, VDD = 80% V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Rthj-pcb(1) D²PAK TO-220FP TO-220 TO-247 Unit 0.66 3.6 Thermal resistance junction-ambient max Thermal resistance junction-pcb max 0.66 62.5 30 °C/W 50 °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 450 mJ DocID024520 Rev 3 3/22 Electrical characteristics 2 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Electrical characteristics (TCASE=25 °C unless otherwise specified). Table 5. On/off states Value Symbol Parameter Test conditions Unit Min. V(BR)DSS dv/dt(1) Drain-source breakdown voltage ID = 1 mA, VGS = 0 Drain source voltage slope VDD= 480 V, ID= 23 A, VGS= 10 V Typ. Max. 600 V 45 VDS = 600 V V/ns 1 μA VDS = 600 V, TC= 125 °C 100 μA Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 11.5 A 0.13 0.15 Ω IDSS IGSS Zero gate voltage drain current (VGS = 0) 3 1. Characteristic value at turn off on inductive load. Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance td(on) Turn-on delay time tr td(off) tf Rise time Turn-off delay time Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 11.5 A RG = 4.7 Ω VGS = 10 V (see Figure 18), (see Figure 20) Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance Min. Typ. Max. Unit - 2090 - pF - 90 - pF - 5.5 - pF - 312 - pF - 23.5 - ns - 21.5 - ns - 92 - ns - 27 - ns VDD = 480 V, ID = 23 A, VGS = 10 V, (see Figure 10) - 62.5 - nC - 11 - nC - 38 - nC f = 1 MHz, test signal level = 20 mV, ID = 0 - 4.7 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/22 DocID024520 Rev 3 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 23 A ISDM (1) Source-drain current (pulsed) - 92 A VSD (2) Forward on voltage - 1.6 V ISD ISD = 23 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 23 A, VDD = 60 V di/dt=100 A/μs (see Figure 17) ISD = 23 A,VDD = 60 V di/dt=100 A/μs, TJ = 150 °C (see Figure 17) - 170 ns - 1160 nC - 14 A - 237 ns - 2090 nC - 18 A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%. DocID024520 Rev 3 5/22 Electrical characteristics 2.1 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and TO-220 Figure 3. Thermal impedance for D2PAK and TO-220 AM16038v1 (on ) DS Op Lim erat ite ion d b in y m this ax are a R is ID (A) 10 10µs 100µs 1ms 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP AM16039v1 ID (A) 10 Figure 5. Thermal impedance for TO-220FP s ai re n) si a DS(o th R in ax n it o y m b a er ed Op mit i L 10µs 100µs 1ms 1 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 AM16040v1 (o n) 10µs DS 10 Op Lim erat ite ion d b in y m this ax are a R is ID (A) 100µs 1ms 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/22 1 10 100 VDS(V) DocID024520 Rev 3 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Figure 8. Output characteristics Figure 9. Transfer characteristics AM16041v1 ID (A) VGS=10V 9V 8V 60 AM16042v1 ID (A) VDS=19V 60 50 50 40 40 7V 30 Electrical characteristics 30 20 20 6V 10 0 0 5 10 15 5V 20 10 Figure 10. Gate charge vs gate-source voltage AM16043v1 VDS VGS (V) (V) VDD=480V ID=23A 12 2 4 6 8 10 VGS(V) Figure 11. Static drain-source on-resistance AM16044v1 RDS(on) (Ω) 0.136 VGS=10V 500 VDS 10 0 0 VDS(V) 0.134 400 0.132 8 300 6 0.130 0.128 200 4 0.126 100 2 0 0 10 20 30 40 50 60 70 0 Qg(nC) Figure 12. Capacitance variations 0.122 0 10 5 15 20 ID(A) Figure 13. Output capacitance stored energy AM16045v1 C (pF) 0.124 AM16046v1 Eoss (µJ) 12 10000 10 Ciss 1000 8 6 100 Coss 4 10 Crss 1 0.1 1 10 100 2 0 VDS(V) DocID024520 Rev 3 0 100 200 300 400 500 600 VDS(V) 7/22 Electrical characteristics STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Figure 14. Normalized gate threshold voltage vs temperature AM16047v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM16048v1 RDS(on) (norm) 1.10 2.1 ID=250µA ID=11.5A VGS=10V 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 0.5 -50 -25 0.7 -25 25 0 75 50 TJ(°C) 100 Figure 16. Source-drain diode forward characteristics AM16050v1 VSD (V) 1.4 0 25 50 75 100 TJ(°C) Figure 17. Normalized VDS vs temperature AM16049v1 VDS (norm) 1.10 ID=1mA 1.08 1.2 TJ=-50°C 1.06 1 1.04 1.02 0.8 TJ=150°C 0.6 1.00 TJ=25°C 0.98 0.4 0.96 0.2 0.94 0 0 8/22 4 8 12 16 20 ISD(A) 0.92 -50 DocID024520 Rev 3 -25 0 25 50 75 100 TJ(°C) STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024520 Rev 3 10% AM01473v1 9/22 Package mechanical data 4 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/22 DocID024520 Rev 3 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 4.1 Package mechanical data D2PAK, STB28NM60ND Figure 24. D²PAK (TO-263) drawing 0079457_T DocID024520 Rev 3 11/22 Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 12/22 DocID024520 Rev 3 Footprint STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 4.2 Package mechanical data TO-220FP, STF28NM60ND Figure 26. TO-220FP drawing 7012510_Rev_K_B DocID024520 Rev 3 13/22 Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/22 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024520 Rev 3 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 4.3 Package mechanical data TO-220, STP28NM60ND Figure 27. TO-220 type A drawing BW\SH$B5HYB7 DocID024520 Rev 3 15/22 Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/22 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID024520 Rev 3 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 4.4 Package mechanical data TO-247, STW28NM60ND Figure 28. TO-247 drawing 0075325_G DocID024520 Rev 3 17/22 Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 11. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 18/22 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024520 Rev 3 5.70 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 5 Packing mechanical data Packing mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID024520 Rev 3 19/22 Packing mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 DocID024520 Rev 3 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 15-Apr-2013 1 First release. 25-Nov-2013 2 – Document status changed from preliminary to production data – Modified: typical values in Table 6 and 7 – Added: Section 2.1: Electrical characteristics (curves) – Updated: Table 10 and Figure 27 – Minor text changes 05-May-2014 3 – Modified: EAS value in Table 4 – Minor text changes DocID024520 Rev 3 21/22 STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 22/22 DocID024520 Rev 3
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