STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
VDSS
(@Tjmax)
Type
RDS(on)
max
ID
3
2
3
STD8NM60ND
650 V
< 0.70 Ω
7A
STF8NM60ND
650 V
< 0.70 Ω
7A
STP8NM60ND
650 V
< 0.70 Ω
7 A(1)
STU8NM60ND
650 V
< 0.70 Ω
7A
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Extremely high dv/dt and avalanche
capabilities
IPAK
TO-220
3
3
1
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■
2
1
1. Limited only by maximum temperature allowed
■
1
DPAK
Figure 1.
1
2
TO-220FP
Internal schematic diagram
Application
■
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD8NM60ND
8NM60ND
DPAK
Tape and reel
STF8NM60ND
8NM60ND
TO-220FP
Tube
STP8NM60ND
8NM60ND
TO-220
Tube
STU8NM60ND
8NM60ND
IPAK
Tube
February 2009
Rev 1
1/17
www.st.com
17
Contents
STx8NM60ND
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics
................................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
.............................................. 9
STx8NM60ND
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
DPAK
IPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at
TC = 25 °C
7
7 (1)
A
ID
Drain current (continuous) at
TC = 100 °C
4.4
4.4 (1)
A
IDM (2)
Drain current (pulsed)
28
28 (1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
2500
V
dv/dt (3) Peak diode recovery voltage slope
Tstg
Tj
Storage temperature
40
V/ns
-55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Table 4.
Symbol
IPAK
TO-220FP
1.79
62.5
Rthj-pcb Thermal resistance junction-pcb
Tl
DPAK
Maximum lead temperature for
soldering purpose
100
50
5
°C/W
62.5
°C/W
°C/W
300
°C
Avalanche characteristics
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
200
mJ
3/17
Electrical characteristics
2
STx8NM60ND
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5.
Symbol
Test conditions
Min.
Typ. Max. Unit
ID = 1 mA, VGS = 0
Drain-source voltage slope
VDD = 480 V, ID = 7 A,
VGS =10 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 3.5 A
0.59
0.70
Ω
dv/dt(1)
600
V
45
3
V/ns
Characteristics value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
gfs(1)
Forward transconductance
VDS = 15 V, ID= 5 A
7.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
560
37
4
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
90
pF
RG
Gate input resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
6
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 7 A
VGS = 10 V
Figure 19
22
4
13
nC
nC
nC
Coss eq.(2)
1.
Parameter
Drain-source breakdown
voltage
V(BR)DSS
1.
On/off states
Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
STx8NM60ND
Electrical characteristics
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Parameter
ISD
Source-drain current
Source-drain current (pulsed)
ISDM
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Min.
VDD = 300 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18,
Figure 23
Typ.
Max.
9
22
37
22
Unit
ns
ns
ns
ns
Source drain diode
Symbol
(1)
Test conditions
Test conditions
Min.
Typ.
Max.
Unit
7
28
A
A
1.3
V
Forward on voltage
ISD = 7 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V,
Figure 20
120
0.49
8
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj=150°C
Figure 20
170
0.75
9
ns
µC
A
1. Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5/17
Electrical characteristics
STx8NM60ND
2.1
Electrical characteristics
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
AM03189v1
ID
(A)
10
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10µs
1
100µs
1ms
Tj=150°C
Tc=25°C
0.1
10ms
Sinlge
pulse
0.01
0.1
Figure 4.
10
1
100
Safe operating area for DPAK, IPAK Figure 5.
Thermal impedance for DPAK, IPAK
AM03188v1
ID
(A)
10
on
)
is
10µs
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
100µs
D
1
VDS(V)
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
0.1
Figure 6.
10
1
100
Safe operating area for TO-220FP
AM03190v1
ID
(A)
10µs
)
on
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
100µs
D
1
VDS(V)
1ms
Tj=150°C
Tc=25°C
0.1
10ms
Sinlge
pulse
0.01
0.1
6/17
1
10
100
VDS(V)
Figure 7.
Thermal impedance for TO-220FP
STx8NM60ND
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
AM03191v1
ID
(A)
VGS=10V
12
Transfer characteristics
AM03192v1
ID
(A)
VDS=15V
12
7V
10
10
8
8
6
6
6V
4
4
2
2
5V
0
0
5
10
15
20
25
30 VDS(V)
Figure 10. Transconductance
2
4
6
8
10 VGS(V)
Figure 11. Static-drain source on resistance
AM03193v1
GFS
(S)
0
0
TJ=-50°C
AM03194v1
RDS(on)
(Ω)
0.069
8.5
ID=3.5A
VGS=10V
0.064
TJ=25°C
6.5
0.059
TJ=150°C
0.054
4.5
0.049
2.5
0.044
0.5
0
5
10
0.039
0
ID(A)
2
4
6
ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
AM03195v1
VGS
(V)
VDD=480V
12
VGS
ID=7A
500
VDS
10
AM03196v1
C
(pF)
1000
Ciss
400
8
300
100
6
Coss
200
4
10
100
2
0
0
5
10
15
20
0
25 Qg(nC)
Crss
1
0.1
1
10
100
VDS(V)
7/17
Electrical characteristics
STx8NM60ND
Figure 14. Normalized gate threshold voltage
vs temperature
AM03197v1
VGS(th)
(norm)
Figure 15. Normalized on resistance vs
temperature
AM03198v1
RDS(on)
(norm)
1.9
1.00
1.7
1.5
0.90
1.3
1.1
0.80
0.9
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
Figure 16. Source-drain diode forward
characteristics
0
25
50
75 100
TJ(°C)
Figure 17. Normalized BVDSS vs temperature
AM03199v1
VSD
(V)
1.2
0.5
-50 -25
AM031200v1
BVDSS
(norm)
1.07
TJ=-50°C
1.05
1.0
1.03
0.8
TJ=25°C
1.01
0.6
0.99
TJ=150°C
0.4
0.97
0.2
0.95
0
0
8/17
10
20
30
40
50 ISD(A)
0.93
-50 -25
0
25
50
75 100
TJ(°C)
STx8NM60ND
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/17
Package mechanical data
4
STx8NM60ND
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/17
STx8NM60ND
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/17
Package mechanical data
STx8NM60ND
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.5
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_J
12/17
STx8NM60ND
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
e
e1
6.60
2.28
4.40
H
4.60
16.10
L
9.00
9.40
(L1)
0.80
1.20
L2
0.80
V1
10 o
0068771_H
13/17
Package mechanical data
STx8NM60ND
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
D1
E
6.20
5.10
6.40
E1
6.60
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
R
V2
1
0.20
0o
8o
0068772_G
14/17
STx8NM60ND
5
Packaging mechanical data
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
MIN.
MAX.
K0
W
inch
MAX.
1.574
16.3
0.618
0.641
15/17
Revision history
6
STx8NM60ND
Revision history
Table 9.
16/17
Document revision history
Date
Revision
09-Feb-2009
1
Changes
First release
STx8NM60ND
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17/17